1.

Conference Proceedings
Conference Proceedings
1. Effect of the Nitridation of the Sapphire (0001) substrate on the GaN Growth
Grandjean, N. ; Massies, J. ; Vennegues, P. ; Laugt, M. ; Leroux, M.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.67-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
2.

Conference Proceedings
Conference Proceedings
2. Molecular Beam Epitaxy of High Quality InGaN Alloys Using Ammonia: Optical and Structural Properties
Grandjean, N. ; Massies, J. ; Leroux, M. ; Laugt, M. ; Vennegues, P. ; Dalmasso, S. ; Ruterana, P. ; Hirsch, L. ; Barriere, S.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G3.59.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
3.

Conference Proceedings
Conference Proceedings
3. Comparative Study of GaN MOVPE Growth Processes Using Two Different "Surface Preparation-Carrier Gas" Combinations
Vennegues, P. ; Haffouz, S. ; Bouille, A. ; Leroux, M. ; Beaumont, B.
Pub. info.: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.273-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 512