1.

Conference Proceedings
Conference Proceedings
1. Electron Cyclotron Resonance Chemical Vapor Deposited Silicon Nitride for T-gate Passivation
Ren, F. ; LaRoche, J. ; Anderson, T. ; Pearton, S.J. ; Lee, J.W. ; Johnson, D. ; Lothian, J.R. ; Lin, J. ; Weiner, J.S. ; Shul, R.J. ; Wu, C.S.
Pub. info.: Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the Twenty-Eighth State-of-the-Art Program on Compound Semiconductors.  pp.513-519,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-2
2.

Conference Proceedings
Conference Proceedings
2. Investigation of Wet Chemical Etching of InGaAlP Alloys
Lee, J.W. ; Santana, C.J. ; Abernathy, C.R. ; Pearton, S.J. ; Ren, F. ; Hobson, W.S. ; Lothian, J.R. ; Wu, C.S.
Pub. info.: Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII).  pp.316-326,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-21
3.

Conference Proceedings
Conference Proceedings
3. Novel in-situ ion bombardment process for a thermally stable (>800 C) plasma deposited dielectric
Ren, F. ; Lothian, J.R. ; Pearton, S.J. ; Wilson, R.G. ; LaRoche, J.R. ; Lee, J.W. ; Johnson, D. ; Zavada, J.M.
Pub. info.: Compound semiconductor surface passivation and novel device processing : symposium held April 5-7, 1999, San Francisco, California, U.S.A..  pp.183-187,  1999.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 573