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Improved Device Performance of In0.5Ga0.5P/In0.22Ga0.78As/GaAs MOS p-HEMT Using a Selective Liquid Phase Oxidation

Author(s):
Kang, I-H.
Lee, J-W.
Kang, S-J.
Jo, S-J.
In, S-K.
Song, H-J.
Kim, J-H.
Song, J-I.
3 more
Publication title:
Progress in semiconductors II : electronic and optoelectronic applications : symposium held December 2-5, 2002, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
744
Pub. Year:
2003
Page(from):
427
Page(to):
432
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558996816 [1558996818]
Language:
English
Call no.:
M23500/744
Type:
Conference Proceedings

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