1.

Conference Proceedings
Conference Proceedings
1. Growth and Investigation of n-AlGaN/p-6H-SiC/n-6H-SiC Heterostructures
Lebedev, A.A. ; Yu Ledyaev, O. ; Strel'chuk, A.M. ; Kuznetsov, A.N. ; Cherenkov, A.E. ; Nikolaev, A.E. ; Zubrilov, A.S. ; Seredova, N.V. ; Volkova, A.A.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1537-1540,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. About the Nature of Recombination Current in 4H-SiC pn Structures
Strel'chuk, A.M. ; Mashichev, A.V. ; Lebedev, A.A. ; Volkova, A.N. ; Zekentes, K.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1343-1346,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
3.

Conference Proceedings
Conference Proceedings
3. Radiation Hard Devices Based on SiC
Kalinina, E. ; Strel'chuk, A.M. ; Lebedev, A.A. ; Strokan, N.B. ; Ivanov, A.M. ; Kholuyanov, G.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1473-1476,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
4.

Conference Proceedings
Conference Proceedings
4. The Limit of SiC Detector Energy Resolution in Ion Spectometry
Yakimova, R. ; Lebedev, A.A. ; Ivanov, A.M. ; Strokan, N.B. ; Syvajarvi, M.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1477-1482,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
5.

Conference Proceedings
Conference Proceedings
5. Photoemission of 4H-SiC pin Diodes Epitaxied by the Sublimation Method
Camara, N. ; Zekentes, K. ; Bano, E. ; Thuaire, A. ; Lebedev, A.A.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.391-394,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
6.

Conference Proceedings
Conference Proceedings
6. Process Induced Defects with Deep Levels in High Purity Silicon
Astrova, E.V. ; Kozlov, V.A. ; Lebedev, A.A. ; Voronkov, V.B.
Pub. info.: Proceedings of the Fourth International Symposium on High Purity Silicon.  pp.379-394,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-13
7.

Conference Proceedings
Conference Proceedings
7. p-3C-SiC/n-6H-SiC Heterojunctions: Structural and Electrical Characterization
Lebedev, A.A. ; Strel'chuk, A.M. ; Davydov, D.V. ; Savkina, N.S. ; Tregubova, A.S. ; Kuznetsov, A.N. ; Soloviev, V.A. ; Poletaev, N.K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.683-686,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
8.

Conference Proceedings
Conference Proceedings
8. 4H-SiC IMPATT Diode Fabrication and Testing
Vassilevski, K.V. ; Zorenko, A.V. ; Zekentes, K. ; Tsagaraki, K. ; Bano, E. ; Banc, C. ; Lebedev, A.A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1353-1358,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
9.

Conference Proceedings
Conference Proceedings
9. Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in Vacuum
Lebedev, A.A. ; Strel'chuk, A.M. ; Kuznetsov, A.N. ; Savkina, N.S.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.597-600,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
10.

Conference Proceedings
Conference Proceedings
10. Radiation Hardness of Silicon Carbide
Lebedev, A.A. ; Kozlovski, V.V. ; Strokan, N.B. ; Davydov, D.V. ; Ivanov, A.M. ; Strel'chuk, A.M. ; Yakimova, R.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.957-960,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
11.

Conference Proceedings
Conference Proceedings
11. 4H-SiC IMPATT Diode Fabrication and Testing
Vassilevski, K.V. ; Zorenko, A.V. ; Zekentes, K. ; Tsagaraki, K. ; Bano, E. ; Banc, C. ; Lebedev, A.A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1353-1358,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
12.

Conference Proceedings
Conference Proceedings
12. N and p Type 6H-SiC Films for the Creation Diode and Triode Structure of Nuclear Particle Detectors
Ivanov, A.M. ; Strokan, N.B. ; Lebedev, A.A. ; Davydov, D.V. ; Savkina, N.S. ; Bogdanova, E.V.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1439-1444,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
13.

Conference Proceedings
Conference Proceedings
13. Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation
Strel'chuk, A.M. ; Lebedev, A.A. ; Davydov, D.V. ; Savkina, N.S. ; Kuznetsov, A.N. ; Valakh, M.Ya. ; Kiselev, V.S. ; Romanyuk, B.N. ; Raynaud, C. ; Chante, J.P. ; Locatelli, M.L.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1133-1136,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
14.

Conference Proceedings
Conference Proceedings
14. p-Type 6H-SiC Films in the Creation of Triode Structures for Low Ionization Radiation
Ivanov, A.M. ; Strokan, N.B. ; Davydov, D.V. ; Savkina, N.S. ; Strelchuk, A.M. ; Lebedev, A.A. ; Yakimova, R.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.969-974,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
15.

Conference Proceedings
Conference Proceedings
15. Modification of the Silicon Carbide by Proton Irradiation
Bogdanova, E.V. ; Kozlovski, V.V. ; Rumyantsev, D.S. ; Volkova, A.A. ; Lebedev, A.A.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.817-820,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
16.

Conference Proceedings
Conference Proceedings
16. TEM (XHREM) and EDX Studies of 6H-SiC Porous Layer as a Substrate for Subsequent Homoepitaxial Growth
Sorokin, L.M. ; Hutchison, J.L. ; Sloan, J. ; Mosina, G.N. ; Savkina, N.S. ; Shuman, V.B. ; Lebedev, A.A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.271-274,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
17.

Conference Proceedings
Conference Proceedings
17. Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation
Savkina, N.S. ; Strel'chuk, A.M. ; Sorokin, L.M. ; Mosina, G.N. ; Tregubova, A.S. ; Solov'ev, V.V. ; Lebedev, A.A.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.293-296,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
18.

Conference Proceedings
Conference Proceedings
18. X-Ray Imaging and TEM Study of Micropipes Related to their Propagation through Porous SiC Layer/SiC Epilayer Interface
Argunova, T.S. ; Gutkin, M.Yu. ; Je, J.H. ; Sorokin, L.M. ; Mosina, G.N. ; Savkina, N.S. ; Shuman, V.B. ; Lebedev, A.A.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.363-366,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
19.

Conference Proceedings
Conference Proceedings
19. Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region
Lebedev, A.A. ; Strel'chuk, A.M. ; Savkina, N.S. ; Bogdanova, E.V. ; Tregubova, A.S. ; Kuznetsov, A.N. ; Davydov, D.V.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.427-430,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
20.

Conference Proceedings
Conference Proceedings
20. High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate
Strel'chuk, A.M. ; Lebedev, A.A. ; Kuznetsov, A.N. ; Savkina, N.S. ; Soloviev, V.A.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1057-1060,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
21.

Conference Proceedings
Conference Proceedings
21. Origin and Behaviour of Deep Levels in Sublimation Growth of 4H-SiC Layers
Syvajarvi, M. ; Yakimova, R. ; Ciechonski, R..R. ; Davydov, D. ; Lebedev, A.A. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.169-172,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
22.

Conference Proceedings
Conference Proceedings
22. Simulation and Prototype Fabrication of Microwave Modulators with 4H-SiC p-i-n Diodes
Bludov, A.V. ; Boltovets, M.S. ; Vassilevski, K.V. ; Zorenko, A.V. ; Zekentes, K. ; Lebedev, A.A. ; Krivutsa, V.A.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1089-1092,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
23.

Conference Proceedings
Conference Proceedings
23. Features of Sublimation Growth on Porous SiC Substrates: Characteristics and Properties of Porous and Epitaxial Layers
Savkina, N.S. ; Shuman, V.B. ; Ratnikov, V.V. ; Rogachev, A.Yu. ; Lebedev, A.A.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.189-192,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
24.

Conference Proceedings
Conference Proceedings
24. N and p Type 6H-SiC Films for the Creation Diode and Triode Structure of Nuclear Particle Detectors
Ivanov, A.M. ; Strokan, N.B. ; Lebedev, A.A. ; Davydov, D.V. ; Savkina, N.S. ; Bogdanova, E.V.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1439-1444,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
25.

Conference Proceedings
Conference Proceedings
25. TEM (XHREM) and EDX Studies of 6H-SiC Porous Layer as a Substrate for Subsequent Homoepitaxial Growth
Sorokin, L.M. ; Hutchison, J.L. ; Sloan, J. ; Mosina, G.N. ; Savkina, N.S. ; Shuman, V.B. ; Lebedev, A.A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.271-274,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
26.

Conference Proceedings
Conference Proceedings
26. p-3C-SiC/n-6H-SiC Heterojunctions: Structural and Electrical Characterization
Lebedev, A.A. ; Strel'chuk, A.M. ; Davydov, D.V. ; Savkina, N.S. ; Tregubova, A.S. ; Kuznetsov, A.N. ; Soloviev, V.A. ; Poletaev, N.K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.683-686,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
27.

Conference Proceedings
Conference Proceedings
27. Effect of Sublimation Growth on the Structure of Porous Silicon Carbide: SEM and X-Ray Diffraction Investigations
Savkina, N.S. ; Ratnikov, V.V. ; Shuman, V.B. ; Lebedev, A.A.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.119-122,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
28.

Conference Proceedings
Conference Proceedings
28. Simple Model for Calculation of SiC Epitaxial Layers Growth Rate in Vacuum
Davydov, S.Yu. ; Savkina, N.S. ; Lebedev, A.A. ; Syvaejaervi, M. ; Yakimova, R.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.249-252,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
29.

Conference Proceedings
Conference Proceedings
29. Thin Heavily Compensated 6H-SiC Epilayers as Nuclear Particle Detectors
Lebedev, A.A. ; Strokan, N.B. ; Ivanov, A.M ; Davydov, D.V. ; Kozlovskii, V.V.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.763-768,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
30.

Conference Proceedings
Conference Proceedings
30. Electron Traps in Undoped GaN Layers Subjected to Gamma-Irradiation and Annealing
Davydov, D.V. ; Emtsev, V.V. ; Lebedev, A.A. ; Lundin, W.V. ; Poloskin, D.S. ; Shmidt, N.M. ; Usikov, A.S. ; Zavarin, E.E.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.799-802,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356