1.

Conference Proceedings
Conference Proceedings
1. Codoping of 4H-SiC with N- and P-Donors by Ion Implantation
Laube, M. ; Schmid, F. ; Pensl, G. ; Wagner, G.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.791-794,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
2.

Conference Proceedings
Conference Proceedings
2. Electrical Activation of Implanted Phosphorus Ions in (0001)/(11-20)-Oriented 4H-SiC
Schmid, F. ; Laube, M. ; Pensl, G. ; Wagner, G. ; Maier, M.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.787-790,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
3.

Conference Proceedings
Conference Proceedings
3. Aluminum Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System
Wagner, G. ; Leitenberger, W. ; Irmscher, K. ; Schmid, F. ; Laube, M. ; Pensl, G.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.207-210,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
4.

Conference Proceedings
Conference Proceedings
4. Electrical and Optical Characterization of SiC
Pensl, G. ; Schmid, F. ; Ciobanu, F. ; Laube, M. ; Reshanov, S.A. ; Schulze, N. ; Semmelroth, K. ; Nagasawa, H. ; Schoner, A. ; Wagner, G.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.365-370,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
5.

Conference Proceedings
Conference Proceedings
5. Aluminum Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System
Wagner, G. ; Leitenberger, W. ; Irmscher, K. ; Schmid, F. ; Laube, M. ; Pensl, G.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.207-210,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
6.

Conference Proceedings
Conference Proceedings
6. Electrical Activation of Implanted Phosphorus Ions in (0001)/(11-20)-Oriented 4H-SiC
Schmid, F. ; Laube, M. ; Pensl, G. ; Wagner, G. ; Maier, M.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.787-790,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
7.

Conference Proceedings
Conference Proceedings
7. Codoping of 4H-SiC with N- and P-Donors by Ion Implantation
Laube, M. ; Schmid, F. ; Pensl, G. ; Wagner, G.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.791-794,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393