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Novel Fabrication of C-Doped Base InGaAs/InP DHBT Structures for High-Speed Circuit Applications

Author(s):
Kopf, R. F.
Hamm, R. A.
Malik, R. J.
Ryan, R. W.
Burm, J.
Tate, A.
Chen, Y-K.
Georgiou, G.
Lang, D. V.
Geva, M.
Ren, F.
6 more
Publication title:
Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
483
Pub. Year:
1998
Page(from):
413
Pub. info.:
Warrendale, Penn.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993884 [1558993886]
Language:
English
Call no.:
M23500/483
Type:
Conference Proceedings

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