Blank Cover Image

Material processing and advanced well structures using high-energy implantation for EPI replacement

Author(s):
Publication title:
Microelectronic Manufacturing Yield, Reliability, and Failure Analysis
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
2635
Pub. Year:
1995
Page(from):
234
Page(to):
245
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819420015 [0819420018]
Language:
English
Call no.:
P63600/2635
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings High-Quality Ultrathin CVD Si3N4 Gate Dielectrics Fabricated by Rapid Thermal Process

Song, S. C., Luan, H. F., Gardner, M., Fulford, J., Allen, M., Kwong, D. L.

MRS - Materials Research Society
7 Conference Proceedings Susceptibility correction for improved tractography using high field DT-EPI

W. Pintjens, D. H. J. Poot, M. Verhoye, A. Van Der Linden, J. Sijbers

Society of Photo-optical Instrumentation Engineers
2 Conference Proceedings Formation of High-Quality Oxynitride Gate Dielectrics by High Pressure Thermal Oxidation of Si in NO

Song, S. C., Lee, C. H., Luan, H. F., Kwong, D. L., Gardner, M., Fulford, J., Allen, M., Bloom, J., Evans, R.

MRS - Materials Research Society
8 Conference Proceedings ELECTRICAL CHARACTERISTICS OF ULTRATHIN STACKED NITRIDE/OXIDE GATE DIELECTRICS PREPARED BY RAPID THERMAL PROCESSING

Ting, W., Ahn, J., Kwong, D. L.

Materials Research Society
3 Conference Proceedings RPT N20 Oxides For Non-Volatile Memory Applications

Gardner, M., Fulford, J., Bhat, M., Kwong, D.L.

Electrochemical Society
9 Conference Proceedings Ultrathin Oxide Reliability: Effects of Gate Doping Concentration and Poly- Si/SiO2 Interface Stress Relaxation

Wristers, D., Wang, H.H., Han, L.K., Lin, C., Chen, T.S., Kwong, D.L., Fulford, J.

Electrochemical Society
4 Conference Proceedings Atomic scale analysis of InGaN multi-quantum wells

Benamara, M., Liliental-Weber, Z., Swider, W., Washburn, J., Dupuis, R. D., Grudowski, P. A., Eiting, C. J., Yang, J. …

MRS-Materials Research Society
10 Conference Proceedings Recent Developments in Ultratlsin Nitride Gate Stack Prepared by In-Situ RTP Multiprocessing for CMOS ULSI

Song, S.C., Kini, B.Y., Loan, H.F., Kwong, D.-L., Gardner, M., Fulford, J., Wristers, D., Gelpey, J., Marcus, S.

Electrochemical Society
5 Conference Proceedings Polarity Dependence of Dielectric Breakdown in NO/N2 O-Based Oxynitrides

Kim, B.Y., Han, L.K., Wristers, D., Fulford, J., Kwong, D.-L.

Electrochemical Society
11 Conference Proceedings Photonic integration of InGaAs-InGaAsP laser using low-energy-implantation-induced quantum well intermixing

Lim,H.S., Ooi,B.S., Lam,Y.L., Chan,Y.C., Zhou,Y., Aimez,V., Beauvais,J., Beerens,J.

SPIE - The International Society for Optical Engineering
6 Conference Proceedings Enhanced Degradation in P+-Poly PMOSFETs With Oxynitride Gate Dielectrics Under Hot-Hole Injection

Chen, Y. Y., Gardner, M., Fulford, J., Wristers, D., Joshi, A. B., Kwong, D. L.

MRS - Materials Research Society
12 Conference Proceedings Advanced telescope for high-energy nuclear astrophysics (ATHENA)

W.N. Johnson, C. Dermer, R.A. Kroeger, J.D. Kurfess, N.A. Gehrels

Society of Photo-optical Instrumentation Engineers
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12