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Conference Proceedings
Conference Proceedings
1. DOPANT ENHANCED LOW-TEMPERATURE EPITAXIAL GROWTH BY RAPID THERMAL PROCESSING CHEMICAL VAPOR DEPOSITION
Hsieh, T.Y. ; Jung, K.H. ; Kwong, D.L.
Pub. info.: Silicon molecular beam epitaxy : symposium held April 29-May 3, 1991, Anaheim, California, U.S.A..  pp.625-632,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 220
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Conference Proceedings
Conference Proceedings
2. RTP-CVD OF Si MATERIALS AND DEVICES FOR ULSI APPLICATIONS
Kwong, D.L. ; Hsieh, T.Y. ; Jung, K.H.
Pub. info.: Silicon molecular beam epitaxy : symposium held April 29-May 3, 1991, Anaheim, California, U.S.A..  pp.557-568,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 220
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Conference Proceedings
Conference Proceedings
3. COMPARISON OF THE DENSITY AND DISTRIBUTION OF TRAPS GENERATED BY HIGH VOLTAGE STRESS IN SILICON OXIDE AND SILICON OXYNITRIDES
Richardson, J.T. ; Dumin, D.J. ; Lo, G.Q. ; Kwong, D.L. ; Gross, B.J. ; Sodini, C.G.
Pub. info.: Amorphous insulating thin films : symposium held December 1-4, 1992, Boston, Massachusetts, U.S.A..  pp.357-362,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 284
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Conference Proceedings
Conference Proceedings
4. lssues on the In-Situ Cleaning of the Silicon Surface and the Process Conditions for Epitaxial Silicon Growth in an RTP CVD Systems
Wang, C.L. ; Unnikrishnan, S. ; Kim, B.Y. ; Kwong, D.L. ; Tasch, A.F.
Pub. info.: Proceedings of the Thirteenth International Symposium on Chemical Vapor Deposition.  pp.306-311,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-5
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Conference Proceedings
Conference Proceedings
5. Effect of Trace Oxygen on Selective Silicon Deposition in a Single-Wafer RTP CVD Reactor
Wang, C.L. ; Unnikrishnan, S. ; Kim, B.Y. ; Kwong, D.L. ; Tasch, A.F.
Pub. info.: Proceedings of the Thirteenth International Symposium on Chemical Vapor Deposition.  pp.312-317,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-5
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Conference Proceedings
Conference Proceedings
6. Strained Ge MOSFETs: Devices and Process Technology
Ritenour, A. ; Lee, M. ; Lu, N. ; Bai, W. ; Yu, S. ; Fitzgerald, E. ; Kwong, D.L. ; Antoniadis, D.
Pub. info.: Advanced short-time thermal processing for Si-based CMOS devices : proceedings of the international symposium.  pp.406-411,  2004.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-01
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Conference Proceedings
Conference Proceedings
7. Characteristics of Ultra Thin (EOT<1 nm) RTCVD Zr Silicate (Zr 27Si 10O 63) Gate Dielectrics
Lee, C.H. ; Luan, H.F ; Bat, W.P. ; Lee, S.J. ; Jean, T.S. ; Roberts, D. ; Kwong, D.L.
Pub. info.: Rapid thermal and other short-time processing technologies II : proceedings of the international symposium.  pp.205-210,  2001.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-9
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Conference Proceedings
Conference Proceedings
8. New Reliability Issues of CMOS Transistors with 1.3nm Thick Gate Oxide
Cho, B.J. ; Chen, G. ; Loh, W.Y. ; Kwong, D.L.
Pub. info.: Silicon nitride and silicon dioxide thin insulating films VII : proceedings of the international symposium.  pp.228-240,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-2
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Conference Proceedings
Conference Proceedings
9. PHOTOLUMINESCENCE AND STRUCTURE OF CHEMICALLY ETCHED Si
Shih, S. ; Jung, K.H. ; Hsieh, T.Y. ; Sarathy, J. ; Tsai, C. ; Li, K.-H. ; Campbell, J.C. ; Kwong, D.L.
Pub. info.: Light emission from silicon : symposium held December 3-5, 1991, Boston, Massachusetts, U.S.A..  pp.27-30,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 256
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Conference Proceedings
Conference Proceedings
10. STRUCTURE AND COMPOSITION OF LUMINESCENT LATERALLY ANODIZED POROUS Si
Jung, K.H. ; Shih, S. ; Hsieh, T.Y. ; Campbell, J.C. ; Kwong, D.L. ; George, T. ; Lin, T.L. ; Liu, H.Y. ; Zavada, J. ; Novak, S.
Pub. info.: Light emission from silicon : symposium held December 3-5, 1991, Boston, Massachusetts, U.S.A..  pp.31-34,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 256
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Conference Proceedings
Conference Proceedings
11. Modeling of High Dose Implanted Boron Diffusion During RTA
Su, T. ; Chol, P. ; Chang, R.D. ; Kwong, D.L.
Pub. info.: Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology.  pp.172-178,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-4
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Conference Proceedings
Conference Proceedings
12. Post-Implant Anneal: Fundamental Differences in Dopant Diffusion and Activation Due to Rapid Thermal Annealing/Furnace Annealing
Choi, P.S. ; Sn, T. ; Chang, R.D. ; Kwong, D.L.
Pub. info.: Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology.  pp.149-154,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-4
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Conference Proceedings
Conference Proceedings
13. RPT N20 Oxides For Non-Volatile Memory Applications
Gardner, M. ; Fulford, J. ; Bhat, M. ; Kwong, D.L.
Pub. info.: Proceedings of the third Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films.  pp.357-362,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-16
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Conference Proceedings
Conference Proceedings
14. Recent Developments In Ultrathin Oxynitride And Oxide/Nitride Stacked Films Prepared By In-Situ RTP Multiprocessing
Bhat, M. ; Yoon, G.W. ; Kim, J. ; Han, L,K. ; Yan, J. ; Wristers, D. ; Kwong, D.L.
Pub. info.: Proceedings of the third Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films.  pp.317-327,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-16
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Conference Proceedings
Conference Proceedings
15. VISIBLE PHOTOLUMINESCENCE AND MICROSTRUCTURE OF ANNEALED AND CHEMICALLY ETCHED AMORPHOUS Si
Jung, K.H. ; Shih, S. ; Kwong, D.L. ; Cho, C.C. ; Gnade, B.E.
Pub. info.: Microcrystalline semiconductors : materials science & devices : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.33-38,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 283
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Conference Proceedings
Conference Proceedings
16. DOPANT REDISTRIBUTION DURING Pd2Si FORMATION USING RAPID THERMAL ANNEALING
Alvi, N.S. ; Kwong, D.L. ; Hopkins, C.G. ; Bauman, S.G.
Pub. info.: Rapid thermal processing : symposium held December 2-4, 1985, Boston, Massachusetts, U.S.A..  pp.73-82,  1985.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 52
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Conference Proceedings
Conference Proceedings
17. RAPID THERMAL ANNEALING OF ARSENIC-PHOSPHOROUS (N+-N-) DOUBLE-DIFFUSED SHALLOW JUNCTIONS
Kwong, D.L. ; Alvi, N.S. ; Ku, Y.H. ; Cheung, A.W.
Pub. info.: Rapid thermal processing : symposium held December 2-4, 1985, Boston, Massachusetts, U.S.A..  pp.241-250,  1985.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 52
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Conference Proceedings
Conference Proceedings
18. A NOVEL SILICIDED SHALLOW JUNCTION TECHNOLOGY FOR CMOS VLSI
Kwong, D.L. ; Ku, Y.H. ; Lee, S.K. ; Alvi, N.S. ; Chu, P. ; Zhou, Y. ; White, J.M.
Pub. info.: Materials issues in silicon integrated circuit processing : symposium held April 15-18, 1986, Palo Alto, California, U.S.A..  pp.379-386,  1986.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 71
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Conference Proceedings
Conference Proceedings
19. GexSi1-x WAVEGUIDES GROWN BY RAPID THERMAL PROCESSING CHEMICAL VAPOR DEPOSITION
Jung, K.H. ; Mayer, R.A. ; Hsieh, T.Y. ; Campbell, J.C. ; Kwong, D.L.
Pub. info.: Silicon molecular beam epitaxy : symposium held April 29-May 3, 1991, Anaheim, California, U.S.A..  pp.347-352,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 220
20.

Conference Proceedings
Conference Proceedings
20. STRUCTURAL INVESTIGATION OF PHOTOLUMINESCENT POROUS Si BY TRANSMISSION ELECTRON MICROSCOPY
Shih, S. ; Jung, K.H. ; Kwong, D.L.
Pub. info.: Semiconductor heterostructures for photonic and electronic applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.513-518,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 281
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Conference Proceedings
Conference Proceedings
21. Process Dependence of MOSFET Performance and Reliability with N2O-Based Furnace-Grown Gate Oxides
Han, L.K ; Wang, H.H. ; Yoon, G.W. ; Allman, D. ; Kwong, D.L.
Pub. info.: ULSI science and technology, 1995 : proceedings of the Fifth International Symposium on Ultra Large Scale Integration Science and Technology.  pp.495-503,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-5
22.

Conference Proceedings
Conference Proceedings
22. Formation of High Quality Thin Stacked Oxynitride Gate Dielectrics by In-Situ Rapid Thermal Multiprocessing
Bhat, M. ; Cho, T.H. ; Yan, J. ; Han, L.K. ; Kwong, D.L.
Pub. info.: ULSI science and technology, 1995 : proceedings of the Fifth International Symposium on Ultra Large Scale Integration Science and Technology.  pp.472-484,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-5
23.

Conference Proceedings
Conference Proceedings
23. High Quality Oxynitride Gate Dielectrics Prepared by Reoxidation of NH3-Nitrided SiO2 and N2O-Oxide in N2O Ambient
Han, L.K. ; Kim, J. ; Wang, H.H. ; Yan, J. ; Kwong, D.L.
Pub. info.: ULSI science and technology, 1995 : proceedings of the Fifth International Symposium on Ultra Large Scale Integration Science and Technology.  pp.485-494,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-5
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Conference Proceedings
Conference Proceedings
24. EFFECTS OF TiN FILM PROPERTIES OF THE INTERACTION BETWEEN TITANIUM AND BOROPHOSPHOSILICATE GLASS DURING HIGH-TEMPERATURE NITRIDATION
Galovich, C.S. ; Lee, S.S. ; Kwong, D.L.
Pub. info.: Evolution of thin-film and surface microstructure : symposium held November 26-December 1, 1990, Boston, Massachusetts, U.S.A..  pp.679-684,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 202
25.

Conference Proceedings
Conference Proceedings
25. N2O-Based Gate Dielectrics for ULSI Applications
Kim, J. ; Yoon, G.W. ; Lo, G.Q. ; Ahn, J. ; Kwong, D.L.
Pub. info.: Proceedings of the Symposium on the Degradation of Electronic Devices due to Device Operation as well as Crystalline and Process-Induced Defects.  pp.25-35,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-1
26.

Conference Proceedings
Conference Proceedings
26. Challenges and Opportunities in High-K Gate Dielectric Technology
Niwa, M. ; Harada, Y. ; Yamamoto, K. ; Hayashi, S. ; Mitsuhashi, R. ; Eriguchi, K. ; Kubota, M. ; Hoshino, Y. ; Kido, Y ; Kwong, D.L.
Pub. info.: Rapid thermal and other short-time processing technologies III : proceedings of the international symposium.  pp.99-116,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-11
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Conference Proceedings
Conference Proceedings
27. Boron Diffusion in Oxide - Effect of Incorporated Nitrogen and Fluorine
Navi, M. ; Dunham, S.T. ; Kim, B.Y. ; Kwong, D.L.
Pub. info.: Proceedings of the Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films.  pp.386-393,  1997.  Pennington, New Jersey.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-10
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Conference Proceedings
Conference Proceedings
28. Ultrathin Oxide Reliability: Effects of Gate Doping Concentration and Poly- Si/SiO2 Interface Stress Relaxation
Wristers, D. ; Wang, H.H. ; Han, L.K. ; Lin, C. ; Chen, T.S. ; Kwong, D.L. ; Fulford, J.
Pub. info.: The physics and chemistry of SiO[2] and the Si-SiO[2] interface-3, 1996 : proceedings of the Third International Symposium on the Physics and Chemistry of SiO[2] and the Si-SiO[2] Interface.  pp.733-743,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-1
29.

Conference Proceedings
Conference Proceedings
29. Ultrathin Oxide Reliability: Effects of Gate Doping Concentration and Poly-Si/SiO2 Interface Stress Relaxation
Unnikrishnan, S. ; Kim, B.Y. ; Wang, C.L. ; Kwong, D.L. ; Tasch, A.F.
Pub. info.: The physics and chemistry of SiO[2] and the Si-SiO[2] interface-3, 1996 : proceedings of the Third International Symposium on the Physics and Chemistry of SiO[2] and the Si-SiO[2] Interface.  pp.744-752,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-1