1.

Conference Proceedings
Conference Proceedings
1. lssues on the In-Situ Cleaning of the Silicon Surface and the Process Conditions for Epitaxial Silicon Growth in an RTP CVD Systems
Wang, C.L. ; Unnikrishnan, S. ; Kim, B.Y. ; Kwong, D.L. ; Tasch, A.F.
Pub. info.: Proceedings of the Thirteenth International Symposium on Chemical Vapor Deposition.  pp.306-311,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-5
2.

Conference Proceedings
Conference Proceedings
2. Effect of Trace Oxygen on Selective Silicon Deposition in a Single-Wafer RTP CVD Reactor
Wang, C.L. ; Unnikrishnan, S. ; Kim, B.Y. ; Kwong, D.L. ; Tasch, A.F.
Pub. info.: Proceedings of the Thirteenth International Symposium on Chemical Vapor Deposition.  pp.312-317,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-5
3.

Conference Proceedings
Conference Proceedings
3. Boron Diffusion in Oxide - Effect of Incorporated Nitrogen and Fluorine
Navi, M. ; Dunham, S.T. ; Kim, B.Y. ; Kwong, D.L.
Pub. info.: Proceedings of the Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films.  pp.386-393,  1997.  Pennington, New Jersey.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-10
4.

Conference Proceedings
Conference Proceedings
4. Ultrathin Oxide Reliability: Effects of Gate Doping Concentration and Poly-Si/SiO2 Interface Stress Relaxation
Unnikrishnan, S. ; Kim, B.Y. ; Wang, C.L. ; Kwong, D.L. ; Tasch, A.F.
Pub. info.: The physics and chemistry of SiO[2] and the Si-SiO[2] interface-3, 1996 : proceedings of the Third International Symposium on the Physics and Chemistry of SiO[2] and the Si-SiO[2] Interface.  pp.744-752,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-1