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New Evidence for Deep Defect Relaxation in Hydrogenated Amorphous Silicon from Junction Capacitance Methods

Author(s):
Publication title:
Amorphous silicon technology, 1996 : symposium held April 8-12, 1996, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
420
Pub. Year:
1996
Page(from):
679
Pub. info.:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993235 [1558993231]
Language:
English
Call no.:
M23500/420
Type:
Conference Proceedings

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