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18 results

Conference Proceedings

1. Recent advances in III-nitride materials: characterrization and device applications (Invited Paper)

Razeghi,M. ; Zhang,X. ; Kung,P. ; Saxier,A. ; Walker,D. ; Lim,K. Y. ; Kim,K. S.

Pub. info.:	Solid state crystals in optoelectronics and semiconductor technology : 7-11 October 1996, Zakopane, Poland. pp.2-11, 1997. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3179

Conference Proceedings

2. New Developments in III-Nitride Material and Device Applications

Razeghi,M. ; Saxler,A. ; Kung,P. ; Walker,D. ; Zhang,X. ; Kim,K.S. ; Vydyanath,H.R. ; Solomon,J. ; Ahoujja,M. ; Mitchel,W.C.

Pub. info.:	Physics of - Semiconductor Devices -. Part 1 pp.277-284, 1998. New Delhi. Narosa Publishing House
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3316

Conference Proceedings

3. Solar-blind Alx Ga1-x N p-i-n photodetectors grown on LEO and non-LEO GaN

Sandvik,P.M. ; Walker,D. ; Kung,P. ; Mi,K. ; Shahedipour,F. ; Kumar,V. ; Zhang,X. ; Diaz,J. ; Jelen,C.L. ; Razeghi,M.

Pub. info.:	Photodetectors : materials and devices V : 26-28 January 2000, San Jose, California. pp.265-272, 2000. Bellingham, Wash., USA. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3948

Conference Proceedings

4. GaN p-i-n photodiodes with high visible-to-ultraviolet rejection ratio

Kung,P. ; Zhang,X. ; Walker,D. ; Saxler,A. ; Razeghi,M.

Pub. info.:	Photodetectors : materials and devices III : 28-30 January 1998, San Jose, California. pp.214-220, 1998. Bellingham, Wash., USA. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3287

Conference Proceedings

5. High-quality LEO growth and characterization of GaN films on AI2O3 and Si substrates

Razeghi,M. ; Kung,P. ; Walker,D. ; Hamilton,M. ; Diaz,J.

Pub. info.:	Epilayers and heterostructures in optoelectronics and semiconductor technology : International Conference on Solid State Crystals '98 : 12-16 October 1998, Zakopane, Poland. pp.14-20, 1999. Bellingham, Wash.. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3725

Conference Proceedings

6. UV photodetectors based on AlxGa1-xN grown by MOCVD

Saxler,A. ; Walker,D. ; Zhang,X. ; Kung,P. ; Xu,J. ; Razeghi,M.

Pub. info.:	Photodetectors : materials and devices : 1-2 February 1996. pp.132-139, 1996. Bellingham, WA. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	2685

Conference Proceedings

7. Intrinsic AlxGa1-xN photodetectors for the entire compositional range

Walker,D. ; Zhang,X. ; Saxler,A. ; Kung,P. ; Xu,J. ; Razeghi,M.

Pub. info.:	Photodetectors : materials and devices II : 12-14 February 1997, San Jose, California. pp.267-274, 1997. Bellingham, WA. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	2999

Conference Proceedings

8. Ultraviolet detector materials and devices studied by femtosecond nonlinear optical techniques

Wraback,M. ; Shen,H.P. ; Kung,P. ; Razeghi,M. ; Carrano,J.C. ; Li,T. ; Campbell,J.C.

Pub. info.:	Photodetectors : materials and devices V : 26-28 January 2000, San Jose, California. pp.352-362, 2000. Bellingham, Wash., USA. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3948

Conference Proceedings

9. LEO of ?-nitride on Al2O3 and Si substrates

Razeghi,M. ; Kung,P. ; Sandvik,P.M. ; Mi,K. ; Zhang,X. ; Dravid,V.P. ; Freitas,J.A.,Jr. ; Saxler,A.W.

Pub. info.:	Photodetectors : materials and devices V : 26-28 January 2000, San Jose, California. pp.320-329, 2000. Bellingham, Wash., USA. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3948

10.

Conference Proceedings

10. AlxGa1-xN materials and device technology for solar blind ultraviolet photodetector applications

McClintock,R. ; Sandvik,P.M. ; Mi,K. ; Shahedipour,F. ; Yasan,A. ; Jelen,C.L. ; Kung,P. ; Razeghi,M.

Pub. info.:	Photodetectors : materials and devices VI : 22-24 January 2001, San Jose, USA. pp.219-229, 2001. Bellingham, Wash., USA. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	4288

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