1.

Conference Proceedings
Conference Proceedings
1. SiC Substrate Doping Profiles Using Commercial Optical Scanners
Caldwell, J.D. ; Glembocki, O.J. ; Hansen, D.M. ; Chung, G. ; Hobart, K.D. ; Kub, F.J.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.725-728,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Silicon Carbide Power Diodes as Radiation Detectors
Phlips, B.F. ; Hobart, K.D. ; Kub, F.J. ; Stahlbush, R.E. ; Das, M.K. ; De Geronimo, G. ; O' Connor, P.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1465-1468,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
3.

Conference Proceedings
Conference Proceedings
3. Electrical Characteristic of Low Temperature Direct Silicon-Silicon Bonding for Power Device Applications
Kub, F.J. ; Hobart, K.D. ; Desmond, C.A.
Pub. info.: Proceedings of the Fourth International Symposium on Semiconductor Wafer Bonding : science, technology, and applications.  pp.466-472,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-36
4.

Conference Proceedings
Conference Proceedings
4. Relaxation Mechanisms of Strained SiGe Films Bonded to High and Low Viscosity Oxides
Hobart, K.D. ; Kub, F.J. ; Fatemi, M. ; Twigg, M.E. ; Thompson, P.E. ; Kuan, T.S. ; Inoki, C.K.
Pub. info.: Semiconductor wafer bonding : science, technology, and applications : proceedings of the international symposia.  pp.85-91,  1999.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-35
5.

Conference Proceedings
Conference Proceedings
5. Si-Si PN Junctions Fabricated by Wafer Bonding in UHV
Hobart, K.D. ; Desmond, C.A. ; Kub, F.J. ; Twigg, M.E. ; Jernigan, G.G.
Pub. info.: Proceedings of the Fourth International Symposium on Semiconductor Wafer Bonding : science, technology, and applications.  pp.409-416,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-36
6.

Conference Proceedings
Conference Proceedings
6. AIGaN/GaN Heterostructure Field Effect Transistors Fabricated on 100mm Si/Poly Sic Composite Substrates
Roberts, J.C. ; Rajagopal, P. ; Cook, J.W.Jr. ; Therrien, R.J. ; Piner, E.L. ; Linthicum, K.J. ; Hobart, K.D. ; Twigg, M. ; Mittereder, J. ; Binari, S. ; Kub, F.J.
Pub. info.: Semiconductor wafer bonding : science, technology, and applications : proceedings of the international symposia.  pp.151-156,  2005.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-02
7.

Conference Proceedings
Conference Proceedings
7. On scaling the thin film Si thickness of SOI substrates. A Perspective on Wafer Bonding for Thin Film Devices
Hobart, K.D. ; Kub, F.J. ; Twigg, M.E. ; Fatemi, M.
Pub. info.: Progress in SOI structures and devices operating at extreme conditions.  pp.299-308,  2002.  Dordrecht.  Kluwer Academic Publishers
Title of ser.: NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.: 58
8.

Conference Proceedings
Conference Proceedings
8. Fabrication of Silicon-on-Diamond (SOD) Substrates
Feygelson, T.I. ; Hobart, K.D. ; Ancona, M. ; Kub, F.J. ; Butler, J.E.
Pub. info.: Semiconductor wafer bonding : science, technology, and applications : proceedings of the international symposia.  pp.439-449,  2005.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-02
9.

Conference Proceedings
Conference Proceedings
9. UV Activation Treatment for Hydrophobic Wafer Bonding
Dang, H. ; Holl, S.L ; Colinge, C.A. ; Hobart K.D. ; Kub, F.J.
Pub. info.: Semiconductor wafer bonding : science, technology, and applications : proceedings of the international symposia.  pp.376-384,  2005.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-02
10.

Conference Proceedings
Conference Proceedings
10. Rapid Thermal Processing of Wafer Bonded Abrupt Junction Tunnel Diodes
Esser, R.H. ; Hobart, K.D. ; Kub, F.J.
Pub. info.: Semiconductor wafer bonding : science, technology, and applications : proceedings of the international symposia.  pp.118-129,  2003.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-19
11.

Conference Proceedings
Conference Proceedings
11. UV/Ozone Activation Treatment for Wafer Bonding
Hobart, K.D. ; Colinge, C.A. ; Ayele, G. ; Kub, F.J.
Pub. info.: Semiconductor wafer bonding : science, technology, and applications : proceedings of the international symposia.  pp.137-143,  2003.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-19
12.

Conference Proceedings
Conference Proceedings
12. Layer Transfer using Implant and Exfoliation Techniques
Hobart, K.D. ; Kub, F.J.
Pub. info.: Semiconductor wafer bonding : science, technology, and applications : proceedings of the international symposia.  pp.17-18,  2001.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-27
13.

Conference Proceedings
Conference Proceedings
13. Structural Characterization of 3C-SiC Films Grown on Si Layers Wafer Bonded to Polycrystalline SiC Substrates
Myers, R.L. ; Hobart, K.D. ; Twigg, M. ; Rao, S. ; Fatemi, M. ; Kub, F.J. ; Saddow, S.E.
Pub. info.: Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A..  pp.145-148,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 815
14.

Conference Proceedings
Conference Proceedings
14. Bi-Directional Double-Side Double-Gate IGBT Fabricated by Wafer Bonding
Kub, F.J. ; Hobart, K.D. ; Ancona, M. ; Neilson, J.M. ; Brandmier, K. ; Waind, P.R.
Pub. info.: Semiconductor wafer bonding : science, technology, and applications : proceedings of the international symposia.  pp.242-242,  2001.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-27
15.

Conference Proceedings
Conference Proceedings
15. Improved Low Temperature Hydrophobic Si-Si Bonding Techniques
Esser, R. ; Hobart, K.D. ; Kub, F.J.
Pub. info.: Semiconductor wafer bonding : science, technology, and applications : proceedings of the international symposia.  pp.126-135,  2001.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-27
16.

Conference Proceedings
Conference Proceedings
16. Bonded Polycrystalline SiC Substrates for the Growth and Fabrication of GaN FETs
Hobart, K.D. ; Kub, F.J. ; Esser, R. ; Jernigan, G.G. ; Fatemi, M. ; Binari, S.C. ; Katzer, D.S. ; Dietrich, H.B. ; Kipshidze, G. ; Nikishin, S. ; Temkin, H.
Pub. info.: Semiconductor wafer bonding : science, technology, and applications : proceedings of the international symposia.  pp.92-99,  2001.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-27
17.

Conference Proceedings
Conference Proceedings
17. Development of 3C-SiC SOI Structures using Si on Polycrystalline SiC Wafer Bonded Substrates
Myers, R.L. ; Saddow, S.E. ; Rao, S. ; Hobart, K.D. ; Fatemi, M. ; Kub, F.J.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1511-1514,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460