Blank Cover Image

Effect of First Wafer on the CD Bias in DARC/Poly Gate Structure

Author(s):
Publication title:
Plasma processing XIII : proceedings of the international symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2000-6
Pub. Year:
2000
Page(from):
183
Page(to):
197
Pages:
15
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772716 [1566772710]
Language:
English
Call no.:
E23400/2000-6
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Quantification of CD-SEM wafer global charging effect on CD and CD uniformity of 193-nm lithography

Ke, C.-M., Hung, H.-L., Chang, A., Chen, J.-H., Gau, T.-S., Ku, Y.-C., Lin, B.J., Otaka, T., Ueda, K., Kawada, H., …

SPIE - The International Society of Optical Engineering
7 Conference Proceedings Impact and characterization of mask repair on wafer CD uniformity

Chang,H.M., Shieh,W.B., Liu,J., Chu,B., Tu,L.H., Cheng,J., Wang,D., Hentschel,S.L., Hsu,V.

SPIE-The International Society for Optical Engineering
2 Conference Proceedings Quantitative analysis of mask error effect on wafer CD variation in ArF lithography

Kim,S.-J., Koo,S.-S., Kim,S.-M., Ahn,C.-N., Ham,Y.-M., Shin,K.-S.

SPIE-The International Society for Optical Engineering
8 Conference Proceedings Method of Reducing the Pattern Effects on B Penetration and TED Effect by In-Situ Poly Deposition at Wafer Backside before Rapid Thermal Processing

Shih, J.-R., Lee, J.H., Lin, B.L., Chen, S.H., Hwang, H.L., Diaz, C.H., Liew, B.K.

Electrochemical Society
3 Conference Proceedings Effect of various ArF resist shrinkage amplitudes on CD bias

Ke, C.-M., Gau, T.-S., Chen, P.-H., Yen, A., Lin, B.J., Otaka, T., Iizumi, T., Sasada, K., Ueda, K.

SPIE-The International Society for Optical Engineering
9 Conference Proceedings CD control for quarter-micron logic device gates using iso-pitch bias

Kim,Y.-C., Yeo,G.-S., Shin,H.-S., Kim,H., Kang,H.-Y., Chung,U-I.

SPIE-The International Society for Optical Engineering
4 Conference Proceedings Precision control of poly-gate CD by local OPC for elimination of microloading effect on 0.13-μm CMOS technology

Lee, T.-K., Wang, Y.-C., Chi, M.-H., Lu, C.Y., Hsieh, C.H., Liu, R.G., Liao, H.J., Yang, S.S., Chang, C.-H.

SPIE-The International Society for Optical Engineering
10 Conference Proceedings Advanced CD linearity improvement for multiproject wafers and SoC at 95-nm technology node

Lu, J., Sandlin, N.L., Sato, H., Lu, C., Cheng, N., Huang, T., Su, C., Buie, M.J.

SPIE-The International Society for Optical Engineering
5 Conference Proceedings Pecision control of poly-gate CD by local OPC for elimination of microloading effect on 0.13-Цm CMOS technology

Lee, T.-K., Wang, Y.-C., Chi, M.-H., Lu, C.Y., Hsieh, C.H., Liu, R.G., Liao, H.J., Yang, S.S., Chang, C.-H.

SPIE-The International Society for Optical Engineering
11 Conference Proceedings First Principle Study on Ti4AlN3 Properties under Pressure Effect

Y. Chen, M.Y. Chu, L.J. Wang

Trans Tech Publications
6 Conference Proceedings Precision control of poly-gate CD by local OPC for elimination of microloading effect on 0.13-μm CMOS technology

Lee, T.-K., Wang, Y.-C., Chi, M., Lu, C.Y., Hsieh, C.H., Liu, R.G., Liao, H.J., Yang, S.S., Chang, C.-H.

SPIE-The International Society for Optical Engineering
12 Conference Proceedings Impact of mask CD error on wafer CD error at low-k1 photolithography

Kim, B. -G., Choi, S. -W., Choi, J. -H., Chun, C. -U., Yoon, H. -S., Sohn, J. -M.

SPIE - The International Society of Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12