Effect of Oxygen on the Degradation of Ti-Si-N Diffusion Barriers in Cu Metallization

Effect of Oxygen on the Degradation of Ti-Si-N Diffusion Barriers in Cu Metallization

Author(s):

McArthur, W. F.

Publication title:

Advanced interconnects and contact materials and processes for future integrated circuits : symposium held April 13-16, 1998, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

514

Pub. Year:

1998

Page(from):

321

Pub. info.:

Warrendale, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994201 [1558994203]

Language:

English

Call no.:

M23500/514

Type:

Conference Proceedings

Details

TDL ID:	ZA00018917
Series ID:	PA00000011
Conf. info. (Name):	Symposium on advanced interconnects and contact materials and processes for future integrated circuits
Conf. info. (Number):	1998
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1998.04.13-1998.04.16

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