1.

Conference Proceedings
Conference Proceedings
1. Modelling of 4H-SiC VJFETs with Self-Aligned Contacts
K. Zekentes ; K. Vassilevski ; A. Stavrinidis ; G. Konstantinidis ; M. Kayambaki
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.913-916,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
2.

Conference Proceedings
Conference Proceedings
2. 4H-SiC VJFETs with Self-Aligned Contacts
K. Zekentes ; A. Stavrinidis ; G. Konstantinidis ; M. Kayambaki ; K. Vamvoukakis
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.793-796,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
3.

Conference Proceedings
Conference Proceedings
3. Capacitances in 4H-SiC TSI-VJFETs
M. Kayambaki ; K. Vamvoukakis ; A. Stavrinidis ; G. Konstantinidis ; N. Kornilios ; K. Zekentes
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.591-594,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897
4.

Conference Proceedings
Conference Proceedings
4. Salicide-Like Process for the Formation of Gate and Source Contacts in 4H-SiC TSI-VJFETs
A. Stavrinidis ; G. Konstantinidis ; K. Vamvoukakis ; K. Zekentes
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.407-410,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897