1.

Conference Proceedings
Conference Proceedings
1. Effect of Additional Silane on In Situ H2 Etching prior to 4H-SiC Homoepitaxial Growth
K. Kojima ; S. Kuroda ; H. Okumura ; K. Arai
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.85-88,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
2.

Conference Proceedings
Conference Proceedings
2. Development of Fuel Cell Hybrid Vehicle in Toyota
K. Kojima ; T. Morita
Pub. info.: Proton exchange membrane fuel cells 8.  pp.185-198,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(2)
3.

Conference Proceedings
Conference Proceedings
3. Development of SiC Super-Junction (SJ) Device by Deep Trench-Filling Epitaxial Growth
R. Kosugi ; Y. Sakuma ; K. Kojima ; S. Itoh ; A. Nagata
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.785-788,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
4.

Conference Proceedings
Conference Proceedings
4. Filling of Deep Trench by Epitaxial SiC Growth
K. Kojima ; A. Nagata ; S. Ito ; Y. Sakuma ; R. Kosugi
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.793-796,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
5.

Conference Proceedings
Conference Proceedings
5. The Growth of 3-Inch 4H-SiC Si-Face Epitaxial Wafer with Vicinal Off-Angle
K. Masumoto ; K. Kojima ; H. Okumura
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.193-196,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
6.

Conference Proceedings
Conference Proceedings
6. Low Resistivity, Thick Heavily Al-Doped 4H-SiC Epilayers Grown by Hot-Wall Chemical Vapor Deposition
S.Y. Ji ; K. Kojima ; Y. Ishida ; H. Tsuchida ; S. Yoshida
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.181-184,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
7.

Conference Proceedings
Conference Proceedings
7. Effect of H2 Carrier Gas on CVD Growth Rate for 4H-SiC Trench Filling
S.Y. Ji ; K. Kojima ; R. Kosugi ; S. Saito ; Y. Sakuma
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.181-184,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
8.

Conference Proceedings
Conference Proceedings
8. A Novel Approach to Analysis of F-N Tunneling Characteristics in MOS Capacitor Having Oxide Thickness Fluctuation
K. Yamada ; J. Senzaki ; K. Kojima ; H. Okumura
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.433-436,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
9.

Conference Proceedings
Conference Proceedings
9. Analysis of Gate Oxide Nitridation Effect on SiC MOSFETs by Using Hall Measurement and Split C-V Measurement
M. Tsujimura ; H. Kitai ; H. Shiomi ; K. Kojima ; K. Fukuda
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.441-444,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
10.

Conference Proceedings
Conference Proceedings
10. Instability of Critical Electric Field in Gate Oxide Film of Heavy Ion Irradiated SiC MOSFETs
M. Deki ; T. Makino ; K. Kojima ; T. Tomita ; T. Ohshima
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.673-676,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
11.

Conference Proceedings
Conference Proceedings
11. A New Type of Single Carrier Conduction Rectifier on SiC
S. Tanimoto ; K. Ueoka ; T. Fujita ; S. Araki ; K. Kojima
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.769-772,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
12.

Conference Proceedings
Conference Proceedings
12. Reducing Stacking Faults in Highly Doped N-Type 4H-SiC Crystal
K. Kojima ; T. Kato ; S. Ito ; J. Kojima ; F. Hirose
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.8-11,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
13.

Conference Proceedings
Conference Proceedings
13. Peak Degradation of Heavy-Ion Induced Transient Currents in 6H-SiC MOS Capacitors
T. Makino ; N. Iwamoto ; S. Onoda ; T. Ohshima ; K. Kojima
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.469-472,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
14.

Conference Proceedings
Conference Proceedings
14. Effects of Fabrication Process on the Electrical Characteristics of n-Channel MOSFETs Irradiated with Gamma-Rays
S. Hishiki ; N. Iwamoto ; T. Ohshima ; H. Itoh ; K. Kojima
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.707-710,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
15.

Conference Proceedings
Conference Proceedings
15. Gate-Area Dependence of SiC Thermal Oxides Reliability
J. Senzaki ; A. Shimozato ; M. Okamoto ; K. Kojima ; K. Fukuda
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.787-790,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
16.

Conference Proceedings
Conference Proceedings
16. Control of the Surface Morphology on Low Off Angled 4H-SiC Homoepitaxal Growth
K. Kojima ; H. Okumura ; K. Arai
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.113-116,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
17.

Conference Proceedings
Conference Proceedings
17. Improvement of Homoepitaxial Layer Quality Grown on 4H-SiC Si-Face Substrate Lower than 1 Degree Off Angle
K. Kojima ; S. Ito ; A. Nagata ; H. Okumura
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.141-144,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
18.

Conference Proceedings
Conference Proceedings
18. Challenges of High-Performance and High-Reliablity in SiC MOS Structures
J. Senzaki ; A. Shimozato ; K. Kojima ; T. Kato ; Y. Tanaka
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.703-708,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
19.

Conference Proceedings
Conference Proceedings
19. Transient Currents Induced in 6H-SiC MOS Capacitors by Oxygen Ion Incidence
N. Iwamoto ; S. Onoda ; T. Ohshima ; K. Kojima ; K. Kawano
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.517-520,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
20.

Conference Proceedings
Conference Proceedings
20. Characterization of Electrical Properties in SiC Crystals by Raman Scattering Spectroscopy
T. Kitamura ; S. Nakashima ; T. Kato ; K. Kojima ; H. Okumura
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.501-504,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
21.

Conference Proceedings
Conference Proceedings
21. Simulation, Fabrication and Characterization of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs)
C. Ota ; J. Nishio ; T. Hatakeyama ; T. Shinohe ; K. Kojima ; S.I. Nishizawa ; H. Ohashi
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.881-884,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
22.

Conference Proceedings
Conference Proceedings
22. Orange fiber laser for ophthalmology
M. Adachi ; K. Kojima ; K. Hayashi
Pub. info.: Advanced biomedical and clinical diagnostic systems V : 21-23 January 2007, San Jose, California, USA.  2007.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 6430
23.

Conference Proceedings
Conference Proceedings
23. 4H-SiC Homoepitaxial Growth on Vicinal-Off Angled Si-Face Substrate
K. Kojima ; S. Ito ; J. Senzaki ; H. Okumura
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.99-102,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
24.

Conference Proceedings
Conference Proceedings
24. Dependence of the Growth Parameters on the In-Plane Distribution of 150 mm φ Size SiC Epitaxial Wafer
C. Kudou ; K. Tamura ; J. Nishio ; K. Masumoto ; K. Kojima
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.139-142,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
25.

Conference Proceedings
Conference Proceedings
25. C-Face Epitaxial Growth of 4H-SiC on Quasi-150-mm Diameter Wafers with High Throughput
J. Nishio ; C. Kudou ; K. Tamura ; K. Masumoto ; K. Kojima
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.109-112,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
26.

Conference Proceedings
Conference Proceedings
26. Epitaxial Growth of Thick Multi-Layer 4H-SiC for the Fabrication of Very High-Voltage C-Face n-Channel IGBT
T. Miyazawa ; S.Y. Ji ; K. Kojima ; Y. Ishida ; K. Nakayama
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.135-138,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
27.

Conference Proceedings
Conference Proceedings
27. Homo-Epitaxial Growth on 2° Off-Cut 4H-SiC(0001) Si-Face Substrates Using H2-SiH4-C3H8 CVD System
K. Tamura ; C. Kudou ; K. Masumoto ; J. Nishio ; K. Kojima
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.214-217,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
28.

Conference Proceedings
Conference Proceedings
28. Characterization of the Defect Evolution in Thick Heavily Al-Doped 4H-SiC Epilayers
S.Y. Ji ; K. Kojima ; Y. Ishida ; H. Yamaguchi ; S. Saito
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.151-154,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
29.

Conference Proceedings
Conference Proceedings
29. Development of Homoepitaxial Growth Technique on 4H-SiC Vicinal Off Angled Substrate
K. Kojima ; K. Masumoto ; S. Ito ; A. Nagata ; H. Okumura
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.125-130,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
30.

Conference Proceedings
Conference Proceedings
30. Influence of Micropipe and Domain Boundary in SiC Substrate on the DC Characteristics of AlGaN/GaN HFET
H. Sazawa ; T. Kato ; K. Kojima ; K. Furuta ; K. Hirata ; M. Kosaki ; M. Kinoshita ; T. Mitani ; S. Nakashima ; H. Okumura
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.1043-1046,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
31.

Conference Proceedings
Conference Proceedings
31. Isotropic Channel Mobility in UMOSFETs on 4H-SiC C-Face with Vicinal Off-Angle
S. Harada ; S. Ito ; M. Kato ; A. Takatsuka ; K. Kojima
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.999-1004,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
32.

Conference Proceedings
Conference Proceedings
32. Threshold Voltage Instability of SiC-MOSFETs on Various Crystal Faces
J. Senzaki ; A. Shimozato ; K. Kojima ; S. Harada ; K. Ariyoshi
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.521-524,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
33.

Conference Proceedings
Conference Proceedings
33. Combustion Synthesis of Titanium-Based Cemented Carbides
T. Tanaka ; K. Matsuura ; K. Kojima ; M. Ohno
Pub. info.: THERMEC 2009, 6th International Conference on PROCESSING & MANUFACTURING OF ADVANCED MATERIALS, Berlin, Germany, August 25-29, 2009.  pp.1860-1865,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 638-642
34.

Conference Proceedings
Conference Proceedings
34. Carrier Density Dependence of Fano Type Interference in Raman Spectra of p-type 4H-SiC
T. Mitani ; S. Nakashima ; M. Tomobe ; S.Y. Ji ; K. Kojima
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.475-478,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
35.

Conference Proceedings
Conference Proceedings
35. Single Event Gate Rupture in SiC MOS Capacitors with Different Gate Oxide Thicknesses
M. Deki ; T. Makino ; K. Kojima ; T. Tomita ; T. Ohshima
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.440-443,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
36.

Conference Proceedings
Conference Proceedings
36. Analysis on Generation of Localized Step-Bunchings on 4H-SiC(0001)Si Face by Synchrotron X-Ray Topography
M. Sasaki ; K. Tamura ; H. Sako ; M. Kitabatake ; K. Kojima
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.398-401,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
37.

Conference Proceedings
Conference Proceedings
37. Residual Stress Measurements of 4H-SiC Crystals Using X-Ray Diffraction
M. Nakabayashi ; T. Fujimoto ; H. Tsuge ; K. Kojima ; K. Abe
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.453-456,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
38.

Conference Proceedings
Conference Proceedings
38. Charge Collection Efficiency of 6H-SiC P+N Diodes Degraded by Low-Energy Electron Irradiation
N. Iwamoto ; S. Onoda ; T. Ohshima ; K. Kojima ; A. Koizumi
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.921-924,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
39.

Conference Proceedings
Conference Proceedings
39. Nitridation Effects of Gate Oxide on Channel Properties of SiC Trench MOSFETs
K. Ariyoshi ; S. Harada ; J. Senzaki ; T. Kojima ; K. Kojima
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.615-618,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
40.

Conference Proceedings
Conference Proceedings
40. Development of SiC Super-Junction (SJ) Devices by Multi-Epitaxial Growth
R. Kosugi ; Y. Sakuma ; K. Kojima ; S. Itoh ; A. Nagata
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.845-850,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
41.

Conference Proceedings
Conference Proceedings
41. Bulk Growth of Low Resistivity n-Type 4H-SiC Using Co-Doping
H. Suo ; K. Eto ; T. Kato ; K. Kojima ; H. Osawa ; H. Okumura
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.3-6,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897
42.

Conference Proceedings
Conference Proceedings
42. Analysis of Trench-Filling Epitaxial Growth of 4H-SiC Based on Continuous Fluid Approximation Including Gibbs-Thomson Effect
K. Mochizuki ; S.Y. Ji ; R. Kosugi ; K. Kojima ; Y. Yonezawa ; H. Okumura
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.47-50,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897
43.

Conference Proceedings
Conference Proceedings
43. Correlation between Local Strain Distribution and Microstructure of Grinding-Induced Damage Layers in 4H-SiC(0001)
S. Tsukimoto ; T. Ise ; G. Maruyama ; S. Hashimoto ; T. Sakurada ; J. Senzaki ; T. Kato ; K. Kojima ; H. Okumura
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.177-180,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897
44.

Conference Proceedings
Conference Proceedings
44. Improvement of Quality of Thick 4H-SiC Epilayers
A. Miyasaka ; K. Kojima ; K. Momose ; H. Osawa ; H. Okumura
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.59-62,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897
45.

Technical Paper
Technical Paper
45. Computations and Experiments of Single-Point Autoignition Gasoline Engine with Colliding Pulsed Supermulti-Jets, Single Piston and Rotary Valve
K. Yamagishi ; Y. Onuma ; S. Ohara ; K. Hasegawa ; K. Kojima
Pub. info.: SAE 2016 International Powertrains, Fuels & Lubricants Meeting : technical paper.  2016.  Warrendale, Penn..  Society of Automotive Engineers
Title of ser.: Society of Automotive Engineers technical paper series
Ser. no.: 2016
46.

Technical Paper
Technical Paper
46. High Thermal Efficiency Obtained with a Single-Point Autoignition Gasoline Engine Prototype Having Pulsed Supermulti-Jets Colliding in an Asymmetric Double Piston Unit
K. Naitoh ; S. Ohara ; Y. Onuma ; K. Kojima ; K. Hasegawa
Pub. info.: SAE 2016 International Powertrains, Fuels & Lubricants Meeting : technical paper.  2016.  Warrendale, Penn..  Society of Automotive Engineers
Title of ser.: Society of Automotive Engineers technical paper series
Ser. no.: 2016
47.

Technical Paper
Technical Paper
47. Development of Hyperspectral remote sensing capability for the early detection and monitoring of Harmful Algal Blooms (HABs) in the Great Lakes
J. Lekki ; R. Anderson ; Q. Nguyen ; J. Demers ; G. Leshkevich ; J. Flatico ; K. Kojima
Pub. info.: AIAA meeting papers on disc.  2009.  Reston, Va..  American Institute of Aeronautics and Astronautics
Title of ser.: AIAA Paper : AIAA Infotech@Aerospace Conference and Exhibit
Ser. no.: 2009
48.

Conference Proceedings
Conference Proceedings
48. Observation of Damaged Layers in 4H-SiC Substrates by Mirror Projection Electron Microscope
M. Sasaki ; K. Tamura ; H. Yamaguchi ; H. Matsuhata ; K. Kojima
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.285-288,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
49.

Conference Proceedings
Conference Proceedings
49. Distribution control of protecting groups and its effect on LER for EUV molecular resist
D. Shiono ; H. Hada ; H. Yukawa ; H. Oizumi ; I. Nishiyama ; K. Kojima ; H. Fukuda
Pub. info.: Advances in resist materials and processing technology XXIV.  2007.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 6519
50.

Conference Proceedings
Conference Proceedings
50. LER transfer from a mask to wafers
H. Tanabe ; G. Yoshizawa ; Y. Liu ; V. L. Tolani ; K. Kojima ; N. Hayashi
Pub. info.: Photomask and next-generation lithography mask technology XIV.  2007.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 6607