1.

Conference Proceedings
Conference Proceedings
1. Low Resistivity, Thick Heavily Al-Doped 4H-SiC Epilayers Grown by Hot-Wall Chemical Vapor Deposition
S.Y. Ji ; K. Kojima ; Y. Ishida ; H. Tsuchida ; S. Yoshida
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.181-184,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
2.

Conference Proceedings
Conference Proceedings
2. Effect of H2 Carrier Gas on CVD Growth Rate for 4H-SiC Trench Filling
S.Y. Ji ; K. Kojima ; R. Kosugi ; S. Saito ; Y. Sakuma
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.181-184,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
3.

Conference Proceedings
Conference Proceedings
3. Epitaxial Growth of Thick Multi-Layer 4H-SiC for the Fabrication of Very High-Voltage C-Face n-Channel IGBT
T. Miyazawa ; S.Y. Ji ; K. Kojima ; Y. Ishida ; K. Nakayama
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.135-138,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
4.

Conference Proceedings
Conference Proceedings
4. Characterization of the Defect Evolution in Thick Heavily Al-Doped 4H-SiC Epilayers
S.Y. Ji ; K. Kojima ; Y. Ishida ; H. Yamaguchi ; S. Saito
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.151-154,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
5.

Conference Proceedings
Conference Proceedings
5. Carrier Density Dependence of Fano Type Interference in Raman Spectra of p-type 4H-SiC
T. Mitani ; S. Nakashima ; M. Tomobe ; S.Y. Ji ; K. Kojima
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.475-478,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
6.

Conference Proceedings
Conference Proceedings
6. Analysis of Trench-Filling Epitaxial Growth of 4H-SiC Based on Continuous Fluid Approximation Including Gibbs-Thomson Effect
K. Mochizuki ; S.Y. Ji ; R. Kosugi ; K. Kojima ; Y. Yonezawa ; H. Okumura
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.47-50,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897