1.

Conference Proceedings
Conference Proceedings
1. A Novel Approach to Analysis of F-N Tunneling Characteristics in MOS Capacitor Having Oxide Thickness Fluctuation
K. Yamada ; J. Senzaki ; K. Kojima ; H. Okumura
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.433-436,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
2.

Conference Proceedings
Conference Proceedings
2. Gate-Area Dependence of SiC Thermal Oxides Reliability
J. Senzaki ; A. Shimozato ; M. Okamoto ; K. Kojima ; K. Fukuda
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.787-790,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
3.

Conference Proceedings
Conference Proceedings
3. Challenges of High-Performance and High-Reliablity in SiC MOS Structures
J. Senzaki ; A. Shimozato ; K. Kojima ; T. Kato ; Y. Tanaka
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.703-708,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
4.

Conference Proceedings
Conference Proceedings
4. 4H-SiC Homoepitaxial Growth on Vicinal-Off Angled Si-Face Substrate
K. Kojima ; S. Ito ; J. Senzaki ; H. Okumura
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.99-102,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
5.

Conference Proceedings
Conference Proceedings
5. Threshold Voltage Instability of SiC-MOSFETs on Various Crystal Faces
J. Senzaki ; A. Shimozato ; K. Kojima ; S. Harada ; K. Ariyoshi
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.521-524,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
6.

Conference Proceedings
Conference Proceedings
6. Nitridation Effects of Gate Oxide on Channel Properties of SiC Trench MOSFETs
K. Ariyoshi ; S. Harada ; J. Senzaki ; T. Kojima ; K. Kojima
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.615-618,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
7.

Conference Proceedings
Conference Proceedings
7. Correlation between Local Strain Distribution and Microstructure of Grinding-Induced Damage Layers in 4H-SiC(0001)
S. Tsukimoto ; T. Ise ; G. Maruyama ; S. Hashimoto ; T. Sakurada ; J. Senzaki ; T. Kato ; K. Kojima ; H. Okumura
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.177-180,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897