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TRAPPING OF OXYGEN AT HOMOEPITAXIAL Si/Si INTERFACES GROWTH BY MODULAR BEAM EPITAXY

Author(s):
Publication title:
Oxygen, carbon, hydrogen, and nitrogen in crystalline silicon : symposium held December 2-5, 1985, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
59
Pub. Year:
1986
Page(from):
317
Page(to):
322
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837241 [0931837243]
Language:
English
Call no.:
M23500/59
Type:
Conference Proceedings

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