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11 results

Conference Proceedings

1. ROOM-TEMPERATURE CW OPERATION OF SQW LASERS ON Si GROWN WITH AlGaAs/AlGaP INTERMEDIATE LAYERS BY MOCVD

Egawa, T. ; Hayashi, H. ; George, T. ; Soga, T. ; Jimbo, T. ; Umeno, M.

Pub. info.:	Materials for optical information processing : symposium held May 1-3, 1991, Anaheim, California, U.S.A.. pp.189-194, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	228

Conference Proceedings

2. CORRELATIONS BETWEEN CRYSTALLINITY AND SCHOTTKY DIODE CHARACTERISTICS OF GaAs GROWN ON Si BY MOCVD

Egawa, T. ; Nozaki, S. ; Noto, N. ; Soga, T. ; Jimbo, T. ; Umeno, M.

Pub. info.:	Chemistry and defects in semiconductor heterostructures. pp.273-278, 1989. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	148

Conference Proceedings

3. GaAs/AlGaAs SQW OPTICAL SWITCH ON Si

Yuasa, T. ; Nagashima, Y. ; Egawa, T. ; Jimbo, T. ; Umeno, M.

Pub. info.:	Semiconductor heterostructures for photonic and electronic applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A.. pp.363-368, 1993. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	281

Conference Proceedings

4. HIGH QUALITY GaP GROWTH ON Si SUBSTRATES BY MOCVD

Uchida, K. ; Kohama, Y. ; Tajima, M. ; Soga, T. ; Jimbo, T. ; Umeno, M.

Pub. info.:	Heteroepitaxy on silicon : fundamentals, structure, and devices : symposium held April 5-8, 1988, Reno, Nevada, U.S.A.. pp.319-324, 1988. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	116

Conference Proceedings

5. Passivation of Defects in GaAs Grown on Low-Cost Substrate for Device Application

Soga, T. ; Jimbo, T. ; Umeno, M.

Pub. info.:	Proceedings of the Eleventh International Workshop on the Physics of Semiconductor Devices : (December 11-15, 2001). VOL-2 pp.996-1001, 2002. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	4746

Conference Proceedings

6. EVALUATION OF ANTI-PHASE BOUNDARIES IN GaAs/Si HEREROSTRUCTURES BY TRANSMISSION ELECTRON MICROSCOPY

Ueda, O. ; Soga, T. ; Jimbo, T. ; Umeno, M.

Pub. info.:	Chemistry and defects in semiconductor heterostructures. pp.267-272, 1989. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	148

Conference Proceedings

7. EFFECTS OF GROWTH TEMPERATURE ON MOCVD-GROWN GaAs-ON-Si

Nozaki, S. ; Noto, N. ; Okada, M. ; Egawa, T. ; Soga,. T ; Jimbo, T. ; Umeno, M.

Pub. info.:	Chemistry and defects in semiconductor heterostructures. pp.235-240, 1989. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	148

Conference Proceedings

8. GROWTH OF GaAs ON Si USING A1GaP INTERMEDIATE LAYER

Noto, N. ; Nozaki, S. ; Egawa, T. ; Soga, T. ; Jimbo, T. ; Umeno, M.

Pub. info.:	Chemistry and defects in semiconductor heterostructures. pp.247-252, 1989. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	148

Conference Proceedings

9. Characteristics of GaN Schottky Diode Grown on Sapphire Substrate by MOCVD

Egawa, T. ; Ishikawa, H. ; Yamamoto, K. ; Jimbo, T. ; Umeno, M.

Pub. info.:	Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.. pp.1101-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	482

10.

Conference Proceedings

10. Degradation of InGaN/AlGaN LED on Sapphire Substrate Grown by MOCVD

Egawa, T. ; Ishikawa, H. ; Jimbo, T. ; Umeno, M.

Pub. info.:	III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.1191-, 1997. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	449

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