1.

Conference Proceedings
Conference Proceedings
1. Characteristics of GaN Schottky Diode Grown on Sapphire Substrate by MOCVD
Egawa, T. ; Ishikawa, H. ; Yamamoto, K. ; Jimbo, T. ; Umeno, M.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.1101-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
2.

Conference Proceedings
Conference Proceedings
2. High Performance AlGaN/GaN HEMTs with Recessed Gate
Sano, Y. ; Mita, J. ; Yamada, T. ; Makita, T. ; Kaifu, K. ; Ishikawa, H. ; Egawa, T. ; Jimbo, T.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1511-1514,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
3.

Conference Proceedings
Conference Proceedings
3. Degradation of InGaN/AlGaN LED on Sapphire Substrate Grown by MOCVD
Egawa, T. ; Ishikawa, H. ; Jimbo, T. ; Umeno, M.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.1191-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
4.

Conference Proceedings
Conference Proceedings
4. High Performance AlGaN/GaN HEMTs with Recessed Gate
Sano, Y. ; Mita, J. ; Yamada, T. ; Makita, T. ; Kaifu, K. ; Ishikawa, H. ; Egawa, T. ; Jimbo, T.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1511-1514,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393