1.

Conference Proceedings
Conference Proceedings
1. In-Diffusion, Trapping and Out-Diffusion of Deuterium in 4H-SiC Substrates
Linnarsson, M.K. ; Janson, M.S. ; Forsberg, U. ; Janzen, E.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.637-640,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Electron Paramagnetic Resonance Study of the HEI4/SI5 Center in 4E-SiC
Umeda, T. ; Son, N.T. ; Isoya, J. ; Morishita, N. ; Ohshima, T. ; Itoh, H. ; Janzen, E.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.543-546,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
3.

Conference Proceedings
Conference Proceedings
3. Signature of the-Negative Carbon Vacancy-Antisite Complex
Bockstedte, M. ; Gali, A. ; Umeda, T. ; Son, N.T. ; Isoya, J. ; Janzen, E.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.539-542,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
4.

Conference Proceedings
Conference Proceedings
4. Divacancy and Its Identification: Theory
Gali, A. ; Bockstedte, M. ; Son, N.T. ; Umeda, T. ; Isoya, J. ; Janzen, E.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.523-526,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
5.

Conference Proceedings
Conference Proceedings
5. Divacancy Model for P6/P7 Centers in 4H- and 6H-SiC
Son, N.T. ; Umeda, T. ; Isoya, J. ; Gali, A. ; Bockstedte, M. ; Magnusson, B. ; Ellison, A. ; Morishita, N. ; Ohshima, T. ; Itoh, H. ; Janzen, E.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.527-530,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
6.

Conference Proceedings
Conference Proceedings
6. ELECTRONIC STRUCTURE OF TWO SULPHUR-RELATED BOUND EXCITONS IN SILICON STUDIED BY OPTICAL DETECTION OF MAGNETIC RESONANCE
Chen, W.M. ; Henry, A. ; Janzen, E. ; Monemar, B. ; Thewalt, M.L.W.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.303-306,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
7.

Conference Proceedings
Conference Proceedings
7. Clustering of Vacancies in Semi-Insulating SiC Observed with Positron Spectroscopy
Aavikko, R. ; Saarinen, K. ; Magnusson, B. ; Janzen, E.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.575-578,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
8.

Conference Proceedings
Conference Proceedings
8. Shallow P Donors in 3C-, 4H- and 6H-SiC
Isoya, J. ; Katagiri, M. ; Umeda, T. ; Son, N.T. ; Henry, A. ; Gali, A. ; Morishita, N. ; Ohshima, T. ; Itoh, H. ; Janzen, E.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.593-596,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
9.

Conference Proceedings
Conference Proceedings
9. Photoluminescence of Phosphorus Doped SiC
Henry, A. ; Janzen, E.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.589-592,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
10.

Conference Proceedings
Conference Proceedings
10. Donor-Acceptor pair Luminescence of Phosphorus-Aluminum and Nitrogen-Aluminum Pairs in 4H SiC
Ivanov, I.G. ; Henry, A. ; Janzen, E.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.601-604,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
11.

Conference Proceedings
Conference Proceedings
11. Optical Studies of Deep Centers in Semi-Insulating SiC
Magnusson, B. ; Aavikko, R. ; Saarinen, K. ; Son, N.T. ; Janzen, E.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.455-460,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
12.

Conference Proceedings
Conference Proceedings
12. Investigation of the Electronic Structure of the UD-4 Defect in 4H-SiC by Optical Techniques
Thuaire, A. ; Henry, A. ; Magnusson, B. ; Bergman, J.P. ; Chen, W.M. ; Janzen, E. ; Mermoux, M. ; Bano, E.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.461-464,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
13.

Conference Proceedings
Conference Proceedings
13. Epitaxial Growth and Characterization of Phosphorus Doped SiC Using TBP as Precursor
Henry, A. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.101-104,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
14.

Conference Proceedings
Conference Proceedings
14. Hyperfine Interaction of Nitrogen Donor in 4H-SiC Studied by Pulsed-ENDOR
Son, N. T. ; Isoya, J. ; Yamasaki, S. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.351-354,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
15.

Conference Proceedings
Conference Proceedings
15. Recombination Enhanced Defect Annealing in 4H-SiC
Storasta, L. ; Carlsson, F. H. C. ; Bergman, J. P. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.369-372,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
16.

Conference Proceedings
Conference Proceedings
16. Optical Characterization of Deep Level Defects in SiC
Magnusson, B. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.341-346,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
17.

Conference Proceedings
Conference Proceedings
17. SiC and III-Nitride Growth in Hot-Wall CVD Reactor
Janzen, E. ; Bergman, J. P. ; Danielsson, O. ; Forsberg, U. ; Hallin, C. ; Hassan, J. ul ; Henry, A. ; Ivanov, I. G. ; Kakanakova-Georgieva, A. ; Persson, P. ; Wahab, Q. ul
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.61-66,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
18.

Conference Proceedings
Conference Proceedings
18. Electron Paramagnetic Resonance of Shallow Phosphorous Centers in 4H- and 6H-SiC
Son, N. T. ; Henry, A. ; Isoya, J. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.515-518,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
19.

Conference Proceedings
Conference Proceedings
19. Effective-Mass Theoty of Shallow Donors in 4H-SiC
Ivanov, I. G. ; Stelmach, A. ; Kleverman, M. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.511-514,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
20.

Conference Proceedings
Conference Proceedings
20. Theoretical Investigations of Complexes of p-Type Dopants and Carbon Interstitial in SiC: Bistable, Negative-U Defects
Gali, A. ; Hornos, T. ; Deak, P. ; Son, N. T. ; Janzen, E. ; Choyke, W. J.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.519-522,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
21.

Conference Proceedings
Conference Proceedings
21. Properties of Thick n- and p-Type Epitaxial Layers of 4H-SiC Grown by Hot-Wall CVD on Off- and On-Axis Substrates
ul Hassan, J. ; Hallin, C. ; Bergman, J.P. ; Janzen, E.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.183-186,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
22.

Conference Proceedings
Conference Proceedings
22. Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices
Sumakeris, J.J. ; Bergman, J.P. ; Das, M.K. ; Hallin, C. ; Hull, B.A. ; Janzen, E. ; Lendenmann, H. ; O'Loughlin, M.J. ; Paisley, M.J. ; Ha, S. ; Skowronski, M. ; Palmour, J.W. ; Carter, C.H.,Jr
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.141-146,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
23.

Conference Proceedings
Conference Proceedings
23. THE DEEP 0.11eV MANGANESE ACCEPTOR LEVEL IN GaAs
Kleverman, M. ; Janzen, E. ; Linnarsson, M. ; Monemar, B.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.207-210,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
24.

Conference Proceedings
Conference Proceedings
24. The Carbon Vacancy Pair in 4H and 6H SiC
Son, N. T. ; Hai, P. N. ; Shuja, A. ; Chen, W. M. ; Lindstrom, J. L. ; Monemar, A. ; Janzen, E.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.821-824,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
25.

Conference Proceedings
Conference Proceedings
25. THE ELECTRONIC STRUCTURE OF THE "0.15 Ev" Cu ACCEPTOR LEVEL IN GaAs
Janzen, E. ; Linnarsson, M. ; Monemar, B. ; Kleverman, M.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.169-174,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
26.

Conference Proceedings
Conference Proceedings
26. Characterization of Deep Level Defects in 4H and 6H SiC Via DLTS, SIMS and MeV E-Beam Irradiation
Doyle, J. P. ; Aboelfotoh, M. O. ; Linnarsson, M. K. ; Svensson, B. G. ; Schoner, A. ; Nordell, N. ; Harris, C. ; Lindstrom, J. L. ; Janzen, E. ; Hemmingsson, C.
Pub. info.: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.519-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 423
27.

Conference Proceedings
Conference Proceedings
27. Photoconductivity of Lightly-Doped and Semi-Insulating 4H-SiC and the Free Exciton Binding Energy
Ivanov, I.G. ; Zhang, J. ; Storasta, L. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.613-616,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
28.

Conference Proceedings
Conference Proceedings
28. Investigation of Thermal Properties in Fabricated 4H-SiC High-Power Bipolar Transistors
Danielsson, E. ; Zetterling, C.-M. ; Ostling, M. ; Forsberg, U. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1337-1340,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
29.

Conference Proceedings
Conference Proceedings
29. Structural Defects in Electrically Degraded 4H-SiC PiN Diodes
Persson, P.O.A. ; Jacobson, H. ; Molina-Aldareguia, J.M. ; Bergman, J.P. ; Tuomi, T. ; Clegg, W.J. ; Janzen, E. ; Hultman, L.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.423-426,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
30.

Conference Proceedings
Conference Proceedings
30. Behavior of Micropipes during Growth in 4H-SiC
Vouroutzis, N. ; Yakimova, R. ; Syvaejaervi, M. ; Jacobson, H. ; Stoemenos, J. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.395-398,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
31.

Conference Proceedings
Conference Proceedings
31. Effect of Temperature Treatment on Au/Pd Schottky Contacts to 4H-SiC
Kassamakova, L. ; Kakanakov, R. ; Yakimova, R. ; Kakanakova-Georgieva, A. ; Syvaejaervi, M. ; Wilzen, L. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.929-932,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
32.

Conference Proceedings
Conference Proceedings
32. Improvements in the Electrical Performance of High Voltage 4H-SiC Schottky Diodes by Hydrogen Annealing
Wahab, Q.u. ; Macak, E.B. ; Zhang, J. ; Madsen, L.D. ; Janzen, E.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.691-694,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
33.

Conference Proceedings
Conference Proceedings
33. *CHALCOGENIDES IN Si
Grimmeiss, H. ; Janzen, E.
Pub. info.: Defects in semiconductors II : symposium held November 1982 in Boston, Massachusetts, U.S.A..  pp.33-44,  1983.  New York.  North-Holland
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 14
34.

Conference Proceedings
Conference Proceedings
34. Power Schottky and p-n Diodes on SiC Epi-Wafers with Reduced Micropipe Density
Syrkin, A. ; Dmitriev, V. ; Yakimova, R. ; Henry, A. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1173-1176,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
35.

Conference Proceedings
Conference Proceedings
35. Intrinsic Photoconductivity of 6H-SiC and the Free-Exciton Binding Energy
Ivanov, I.G. ; Egilsson, T. ; Zhang, J. ; Ellison, A. ; Janzen, E.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.405-408,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
36.

Conference Proceedings
Conference Proceedings
36. Influence of Trenching Effect on the Characteristics of Buried-Gate SiC Junction Field-Effect Transistors
Koo, S.-M. ; Lee, S.-K. ; Zetterling, C.-M. ; Ostling, M. ; Forsberg, U. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1235-1238,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
37.

Conference Proceedings
Conference Proceedings
37. Intrinsic Defects in Silicon Carbide Polytypes
Son, N.T. ; Hai, P.N. ; Janzen, E.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.499-504,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
38.

Conference Proceedings
Conference Proceedings
38. Proton Irradiation Induced Defects in 4H-SiC
Storasta, L. ; Carlsson, F.H.C. ; Sridhara, S.G. ; Aberg, D. ; Bergman, J.P. ; Hallen, A. ; Janzen, E.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.431-434,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
39.

Conference Proceedings
Conference Proceedings
39. Electroluminescence from Implanted and Epitaxially Grown pn-Diodes
Carlsson, F. H. C. ; Storasta, L. ; Hemmingsson, C. ; Bergman, J. P. ; Janzen, E.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.687-690,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
40.

Conference Proceedings
Conference Proceedings
40. Characterization and Comparison of 4H-SiC(1120) and 4H-SiC(0001)8° Off-Axis Substrates and Homoepitaxial Films
Bishop, S.M. ; Preble, E.A. ; Hallin, C. ; Henry, A. ; Sarney, W. ; Chang, H.-R. ; Storasta, L. ; Jacobson, H. ; Reitmeier, Z.J. ; Wagner, B.P. ; Janzen, E. ; Davis, R.F.
Pub. info.: Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A..  pp.53-58,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 815
41.

Conference Proceedings
Conference Proceedings
41. Hole Effective Masses in 4H SiC Determined by Optically Detected Cyclotron Resonance
Son, N. T. ; Hai, P. N. ; Chen, W. M. ; Hallin, C. ; Monemar, B. ; Janzen, E.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.5663-566,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
42.

Conference Proceedings
Conference Proceedings
42. Fast SiC Epitaxial Growth in a Chimney CVD Reactor and HTCVD Crystal Growth Developments
Ellison, A. ; Zhang, J. ; Magnusson, W. ; Henry, A. ; Wahab, Q. ; Bergman, J. P. ; Hemmingsson, C. ; Son, N. T. ; Janzen, E.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.131-136,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
43.

Conference Proceedings
Conference Proceedings
43. Bandstructure and Transport Properties of 4H- and 6H-SiC: Optically Detected Cyclotron Resonance Investigations
Meyer, B. K. ; Hofmann, D. M. ; Volm, D. ; Chen, W. M. ; Son, N. T. ; Janzen, E.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.559-562,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
44.

Conference Proceedings
Conference Proceedings
44. High Growth Rate Epitaxy of Thick 4H-SiC Layers
Syvajarvi, M. ; Yakimova, R. ; Jacobsson, H. ; Linnarsson, M. K. ; Henry, A. ; Janzen, E.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.165-168,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
45.

Conference Proceedings
Conference Proceedings
45. Vacancies and Their Complexes with H in SiC
Deak, P. ; Gali, A. ; Aradi, B. ; Son, N. T. ; Janzen, E. ; Choyke, W. J.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.817-820,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
46.

Conference Proceedings
Conference Proceedings
46. Influence of Epitaxial Growth and Substrate Induced Defects on the Breakdown of High-Voltage 4H-SiC Schottky Diodes
Wahab, Q. ; Ellison, A. ; Hallin, C. ; Henry, A. ; Persio, J. Di ; Martinez, R. ; Janzen, E.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1175-1178,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
47.

Conference Proceedings
Conference Proceedings
47. Defect Energetics in 4H-SiC Sublimation Epi-Layers Grown on LPE Buffers With Reduced Micropipe Density
Yakimova, R. ; Syvaejaervi, M. ; Jacobsson, H. ; Kakanakova-Georgieva, A. ; Tuomi, T. ; Rendakova, S. ; Dmitriev, V. ; Janzen, E.
Pub. info.: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 640
48.

Conference Proceedings
Conference Proceedings
48. Designing, Physical Simulation and Fabrication of High-Voltage (3.85 kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall and Chimney CVD Films
Wahab, Q. ; Ellison, A. ; Zhang, J. ; Forsberg, U. ; Duranova, E. ; Henry, A. ; Madsen, L. D. ; Janzen, E.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1171-1174,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
49.

Conference Proceedings
Conference Proceedings
49. HTCVD Growth of Semi-Insulating 4H-SiC Crystals With Low Defect Density
Ellison, A. ; Magnusson, B. ; Hemmingsson, C. ; Magnusson, W. ; Iakimov, T. ; Storasta, L. ; Anne, H. ; Henelius, N. ; Janzen, E.
Pub. info.: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 640
50.

Conference Proceedings
Conference Proceedings
50. Deep-Level Luminescence at 1.0 eV in 6H SiC
Magnusson, B. ; Ellison, A. ; Son, N.T. ; Janzen, E.
Pub. info.: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 640