1.

Conference Proceedings
Conference Proceedings
1. Nonvolatile Memories Based on Nanocrystalline Zinc Oxide Embedded Zirconium-doped Hafnium Oxide Thin Films
J. Lu ; C. Lin ; Y. Kuo
Pub. info.: Physics and technology of high-k gate dielectrics 5.  pp.509-518,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 11(4)
2.

Conference Proceedings
Conference Proceedings
2. Hafnium-Doped Tantalum Oxide High-K Dielectrics
J. Lu ; J.-Y. Tewg ; Y. Kuo ; P. C. Liu
Pub. info.: Physicas and technology of high-k gate dielectrics : proceedings of the International Symposium on High Dielectric Constant Materials : Materials Science, Processing, and Reliability, and Manufacturing Issues.  pp.105-112,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-28
3.

Conference Proceedings
Conference Proceedings
3. Electrical and Physical Characterization of Zirconium-Doped Tantalum Oxide Films
J.-Y. Tewg ; J. Lu ; Y. Kuo ; B. Schueler
Pub. info.: Physicas and technology of high-k gate dielectrics : proceedings of the International Symposium on High Dielectric Constant Materials : Materials Science, Processing, and Reliability, and Manufacturing Issues.  pp.75-82,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-28
4.

Conference Proceedings
Conference Proceedings
4. Sub 2 nm Thick Zirconjism Doped Hafnium Oxide High-K Gate Dielectrics
Y. Kuo ; J. Lu ; J. Yan ; T. Yuan ; H. Kim ; J. Peterson ; M. Gardner ; S. Chatterjee ; W. Luo
Pub. info.: Physics and technology of high-k gate dielectrics III.  pp.447-454,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(5)
5.

Conference Proceedings
Conference Proceedings
5. Bulk and Interface Material and Electrical Properties of Hafnium-Doped Tantalum Oxide High-K Films
Y. Kuo ; J. Lu
Pub. info.: Physics and technology of high-k gate dielectrics III.  pp.177-184,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(5)
6.

Conference Proceedings
Conference Proceedings
6. Influence of Ru Dopant on the Dielectric Properties of Zr-doped HfO2 High-k Thin Film
C. Lin ; Y. Kuo ; J. Lu
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment.  pp.121-128,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(1)