1.

Conference Proceedings
Conference Proceedings
1. 6H-SiC Homoepitaxial Growth and Optical Property of Boron- and Nitrogen-Doped Donor-Acceptor Pair (DAP) Emission of 1o-Off Substrate by Closed-Space Sublimation Method
Kawai, Y. ; Maeda, T. ; Nakamura, Y. ; Sakurai, Y. ; Iwaya, M. ; Kamiyama, S. ; Amano, H. ; Akasaki, I. ; Yoshimoto, M. ; Furusho, T. ; Kinoshita, H. ; Shiomi, H.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.263-266,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Growth of Group III Nitrides on Various Plane Substrates
Amano, H. ; Honshio, A. ; Kitano, T. ; Miyake, Y. ; lida, K. ; Kawashima, T. ; Imura, M. ; Balakrishnan, K. ; Iwaya, M. ; Kamiyama, S. ; Akasaki, I.
Pub. info.: State-of-the-art program on compound semiconductors XLI and nitride and wide bandgap semiconductors for sensors, photonics, and electronics V : proceedings of the international symposia.  pp.192-199,  2004.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-06
3.

Conference Proceedings
Conference Proceedings
3. High-quality AlxGa1-xN using low temperature-interlayer and its application to UV detector
Iwaya, M. ; Terano, S. ; Hayashi, N. ; Kashima, T. ; Detchrohm, T. ; Amano, H. ; Akasaki, I. ; Hirano, A. ; Pernot, C.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W1.10.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
4.

Conference Proceedings
Conference Proceedings
4. Improvement of Crystalline Quality of Group III Nitrides on Sapphire Using Low Temperature Interlayers
Amano, H. ; Iwaya, M. ; Hayashi N. ; Kashima, T. ; Katsuragawa, M. ; Takeuchi, T. ; Wetzel, C. ; Akasaki, I.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G10.1.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
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Conference Proceedings
Conference Proceedings
5. Structural Properties of Nitrides Grown by OMVPE on Sapphire Substrate
Amano, H. ; Takekuchi, T. ; Yamaguchi, S. ; Nitta, S. ; Kariya, M. ; Iwaya, M. ; Wetzel, C. ; Akasaki, I.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.479-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
6.

Conference Proceedings
Conference Proceedings
6. High Efficiency UV Emitter Using High Quality GaN/AlxGa1-xN Multi-Quantum Well Active Layer
Iwaya, M. ; Terao, S. ; Ukai, T. ; Nakamura, R. ; Kamiyama, S. ; Amano, H. ; Akasaki, I.
Pub. info.: GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 639
7.

Conference Proceedings
Conference Proceedings
7. Defect and Stress Control of AlGaN and Fabrication of High-Efficiency UV-LED
Amano, H. ; Iwaya, M. ; Nitta, S. ; Terao, S. ; Nakamura, R. ; Ukai, T. ; Saitoh, S. ; Kamiyama, S. ; Wetzel, C. ; Akasaki, I.
Pub. info.: GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 639
8.

Conference Proceedings
Conference Proceedings
8. Photoluminescence of Excitons in n-Type In0.11Ga0.89N/In0.01Ga0.99N Multiple Quantum Wells
Monemar, B. ; Paskov, P.P. ; Bergman, J.P. ; Pozina, G. ; Kamiyama, S. ; Iwaya, M. ; Amano, H. ; Akasaki, I.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.501-508,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693
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Conference Proceedings
Conference Proceedings
9. Oxygen-related Shallow Acceptor in GaN
Monemar, B. ; Paskov, P. P. ; Tuomisto, F. ; Saarinen, K. ; Iwaya, M. ; Kamiyama, S. ; Amano, H. ; Akasaki, I. ; Kimura, S.
Pub. info.: GaN, AIN, InN and their alloys : symposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A..  pp.329-334,  2005.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 831
10.

Conference Proceedings
Conference Proceedings
10. Photoluminescence and Electroluminescence Characterization of InxGa1-xN/InyGa1-yN Multiple Quantum Well Light Emitting Diodes
Bergman, J.P. ; Pozina, G. ; Monemar, B. ; Kamiyama, S. ; Iwaya, M. ; Amano, H. ; Akasaki, I.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1493-1496,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
11.

Conference Proceedings
Conference Proceedings
11. The role of the multi buffer layer technique on the structural quality of GaN
Benamara, M. ; Liliental-Weber, Z. ; Mazur, J. H. ; Swider, W. ; Washburn, J. ; Iwaya, M. ; Akasaki, I. ; Amano, H.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W5.8.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
12.

Conference Proceedings
Conference Proceedings
12. Photoluminescence and Electroluminescence Characterization of InxGa1-xN/InyGa1-yN Multiple Quantum Well Light Emitting Diodes
Bergman, J.P. ; Pozina, G. ; Monemar, B. ; Kamiyama, S. ; Iwaya, M. ; Amano, H. ; Akasaki, I.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1493-1496,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
13.

Conference Proceedings
Conference Proceedings
13. Luminescence of InGaN/GaN Multiple Quantum Wells Grown by Mass-Transport
Pozina, G. ; Bergman, J.P. ; Monemar, B. ; Iwaya, M. ; Nitta, S. ; Amano, H. ; Akasaki, I.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.791-794,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
14.

Conference Proceedings
Conference Proceedings
14. Simulation and fabrication of nitride-based moth-eye light emitting diodes [6115-68]
Nakashima, M. ; Kasugai, H. ; Deguchi, A. ; Balakrishnan, K. ; Iwaya, M. ; Kamiyama, S. ; Amano, H. ; Akasaki, I.
Pub. info.: Physics and Simulation of Optoelectronic Devices XIV.  pp.61151Y-,  2006.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 6115
15.

Conference Proceedings
Conference Proceedings
15. Optical properties of InGaN/GaN and AlGaN/GaN multiple quantum well structures
Monemar, B. ; Paskov, P.P. ; Haratizadeh, H. ; Pozina, G.R. ; Bergman, J.P. ; Kamiyama, S. ; Iwaya, M. ; Amano, H. ; Akasaki, I.
Pub. info.: 10th International Symposium on Nanostructures: Physics and Technology.  pp.63-67,  2003.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5023
16.

Conference Proceedings
Conference Proceedings
16. Fabrication of UV devices on various plane substrates (Invited Paper)
Iwaya, M. ; Kawashima, T. ; Iida, K. ; Honshio, A. ; Miyake, Y. ; Kasugai, H. ; Balakrishnan, K. ; Kamiyama, S. ; Amano, H. ; Akasaki, l.
Pub. info.: Novel In-Plane Semiconductor Lasers IV.  pp.210-224,  2005.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5738
17.

Conference Proceedings
Conference Proceedings
17. Growth and fabrication of nitride-based LED on metallic substrate for application to high-power device and flexible display
Amano, H. ; Iwaya, M. ; Nitta, S. ; Tomida, Y. ; Iida, K. ; Kawashima, T. ; Fukui, S. ; Kamiyama, S. ; Akasaki, I. ; Kinoshita, H. ; Matsuda, T. ; Otani, S.
Pub. info.: Physics and Simulation of Optoelectronic Devices XI.  pp.608-612,  2003.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4986
18.

Conference Proceedings
Conference Proceedings
18. Physics and simulation of group-III-nitride-based moth-eye LEDs
Iwaya, M. ; Kasugai, H. ; Kawashima, T. ; Iida, K. ; Honshio, A. ; Miyake, Y. ; Kamiyama, S. ; Amano, H. ; Akasaki, I.
Pub. info.: Physics and Simulation of Optoelectronic Devices XIII.  pp.431-438,  2005.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5722