1.

Conference Proceedings
Conference Proceedings
1. Proposal of the Thermal Equilibrium Model for SiC Hydrogen Etching Phenomena
Ishida, Y. ; Takahashi, T. ; Okumura, H. ; Arai, K. ; Kimura, K. ; Nakamura, K. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.211-214,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Super-resolution x-ray imaging by CdTe discrete detector arrays [5922-33]
Aoki, T. ; Ishida, Y. ; Morii, H. ; Tomita, Y. ; Ohashi, G. ; Temmyo, J. ; Hatanaka, Y.
Pub. info.: Hard X-ray and gamma-ray detector physics VII : 1-3 August 2005, San Diego, California.  pp.59220T-,  2005.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5922
3.

Conference Proceedings
Conference Proceedings
3. Evaluation of properties of various type CdTe hard x-ray detectors [5922-42]
Togami, A. ; Ishida, Y. ; Aoki, T. ; Hatanaka, Y. ; Temmyo, J.
Pub. info.: Hard X-ray and gamma-ray detector physics VII : 1-3 August 2005, San Diego, California.  pp.592210-592210,  2005.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5922
4.

Conference Proceedings
Conference Proceedings
4. Energy distinction type CdTe two-dimension x-ray imaging device [5922-41]
Furuhashi, D. ; Sakashita, D. ; Ishida, Y. ; Aoki, T. ; Tomita, Y. ; Hatanaka, Y. ; Temmyo, J.
Pub. info.: Hard X-ray and gamma-ray detector physics VII : 1-3 August 2005, San Diego, California.  pp.59220Z-,  2005.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5922
5.

Conference Proceedings
Conference Proceedings
5. Coimplantation Effects of (C and Si)/Ga in 6H-SiC
Tanaka, Y. ; Kobayashi, N. ; Hasegawa, M. ; Ogura, M. ; Ishida, Y. ; Yoshida, S. ; Okumura, H. ; Tanoue, H.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.917-920,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
6.

Conference Proceedings
Conference Proceedings
6. Structural and Optical Characterization of High-Quality Cubic GaN Epilayers Grown on GaAs and 3C-SiC Substrates by Gas-Source MBE Using RHEED In Situ Monitoring
Okumura, H. ; Balakrishnan, K. ; Feuillet, G. ; Ohta, K. ; Hamaguchi, H. ; Chichibu, S. ; Ishida, Y. ; Yoshida, S.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.435-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
7.

Conference Proceedings
Conference Proceedings
7. Sensitive Detection of Defects in α and β SiC by Raman Scattering
Nakashima, S. ; Nakatake, Y. ; Ishida, Y. ; Takahashi, T. ; Okumura, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.629-632,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
8.

Conference Proceedings
Conference Proceedings
8. Replication of Defects from 4H-SiC Wafer to Epitaxial Layer
Ohno, T. ; Yamaguchi, H. ; Kojima, K. ; Nishio, J. ; Masahara, K. ; Ishida, Y. ; Takahashi, T. ; Suzuki, T. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.447-450,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
9.

Conference Proceedings
Conference Proceedings
9. Photoemission Spectroscopic Studies on Oxide/SiC Interfaces Formed by Dry and Pyrogenic Oxidation
Hijikata, Y. ; Yaguchi, H. ; Ishida, Y. ; Yoshikawa, M. ; Kamiya, T. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1341-1344,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
10.

Conference Proceedings
Conference Proceedings
10. Influence of the Crystalline Quality of Epitaxial Layers on Inversion Channel Mobility in 4H-SiC MOSFETs
Kojima, K. ; Ohno, T. ; Suzuki, S. ; Senzaki, J. ; Harada, S. ; Fukuda, K. ; Kushibe, M. ; Masahara, K. ; Ishida, Y. ; Takahashi, T. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1053-1056,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
11.

Conference Proceedings
Conference Proceedings
11. Characterization of the Interfaces between SiC and Oxide Films by Spectroscopic Ellipsometry
Tomioka, Y. ; Iida, T. ; Midorikawa, M. ; Tukada, H. ; Yoshimoto, K. ; Hijikata, Y. ; Yaguchi, H. ; Yoshikawa, M. ; Ishida, Y. ; Kosugi, R. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1029-1032,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
12.

Conference Proceedings
Conference Proceedings
12. The Investigation of 4H-SiC/SiO2 Interfaces by Optical and Electrical Measurements
Ishida, Y. ; Takahashi, T. ; Okumura, H. ; Jikimoto, T. ; Tsuchida, H. ; Yoshikawa, M. ; Tomioka, Y. ; Midorikawa, M. ; Hijikata, Y. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1013-1016,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
13.

Conference Proceedings
Conference Proceedings
13. Solar Wind Imaging Facility (SWIFT) for space weather research
Kojima, M. ; Tokumaru, M. ; Fujiki, K. ; Ishida, Y. ; Ohmi, T. ; Hayashi, K. ; Yamashita, M.
Pub. info.: Innovative telescopes and instrumentation for solar astrophysics : 24-28 August 2002, Waikoloa, Hawaii, USA.  pp.121-128,  2003.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4853
14.

Conference Proceedings
Conference Proceedings
14. Application of Spatially Resolved EELS on Atomic-Structure Determination of Diamond Grain Boundary
Ichinose, H. ; Zhang, Y. ; Ishida, Y. ; Ito, K. ; Nakanose, M.
Pub. info.: Atomic resolution microscopy of surfaces and interfaces : symposium held December 3-5, 1996, Boston, Massachusetts, U.S.A..  pp.273-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 466
15.

Conference Proceedings
Conference Proceedings
15. Competitive Growth between Deposition and Etching in 4H-SiC CVD Epitaxy Using Quasi-Hot Wall Reactor
Kushibe, M. ; Ishida, Y. ; Okumura, H. ; Takahashi, T. ; Masahara, K. ; Ohno, T. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.169-172,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
16.

Conference Proceedings
Conference Proceedings
16. Pre-Growth Treatment of 4H-SiC Substrates by Hydrogen Etching at Low Pressure
Masahara, K. ; Ishida, Y. ; Okumura, H. ; Takahashi, T. ; Kushibe, M. ; Ohno, T. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1037-1040,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
17.

Conference Proceedings
Conference Proceedings
17. Piezoelectric Field and Its Influence on the Pressure Behavior of the Light Emission From InGaN/GaN and GaN/AlGaN Quantum Wells
Suski, T. ; Perlin, P. ; Lepkowski, S.P. ; Teisseyre, H. ; Gorczyca, I. ; Prystawko, P. ; Leszczynski, M. ; Grandjean, N. ; Massies, J. ; Kitamura, T. ; Ishida, Y. ; Chichibu, S.F. ; Okumura, H.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.487-500,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693
18.

Conference Proceedings
Conference Proceedings
18. Similarities in the Optical Properties of Hexagonal and Cubic InGaN Quantum Wells
Chichibu, S.F. ; Sugiyama, M. ; Onuma, T. ; Kuroda, T. ; Tackeuchi, A. ; Sota, T. ; Kitamura, T. ; Nakanishi, H. ; Ishida, Y. ; Okumura, H. ; Keller, S. ; Mishra, U.K. ; DenBaars, S.P. ; Nakamura, S.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.481-486,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693
19.

Conference Proceedings
Conference Proceedings
19. Schottky Barrier Characteristics of 3C-SiC Epilayers Grown by Low Pressure Chemical Vapor Deposition
Ishida, Y. ; Takahashi, T. ; Okumura, H. ; Sekigawa, T. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1235-1238,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
20.

Conference Proceedings
Conference Proceedings
20. Hall Effect Measurements At Low Temperature Of Arsenic Implanted Into 4H-Silicon Carbide
Senzaki, J. ; Fukuda, K. ; Ishida, Y. ; Tanaka, Y. ; Tanoue, H. ; Kobayashi, N. ; Tanaka, T. ; Arai, K.
Pub. info.: Wide-bandgap electronic devices.  pp.T6.7-,  2001.  Warrendale, PA..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 622
21.

Conference Proceedings
Conference Proceedings
21. Observation of Cubic GaN/AIN Heterointerface Formation by RHEED in Plasma-Assisted Molecular Beam Epitaxy
Okumura, H. ; Koizumi, T. ; Ishida, Y. ; Cho, S. -H. ; Shen, X. -Q. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1545-1548,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
22.

Conference Proceedings
Conference Proceedings
22. The APD Annihilation Mechanism of 3C-SiC Hetero-Epilayer on Si(001) Substrate
Ishida, Y. ; Takahashi, T. ; Okumura, H. ; Sekigawa, T. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.253-256,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
23.

Conference Proceedings
Conference Proceedings
23. Influence of Stacking Faults on the I-V Characteristics of 4H-SiC Schottky Barrier Diodes Fabricated on the (11-20) Face
Kojima, K. ; Ohno, T. ; Fujimoto, T. ; Katsuno, M. ; Ohtani, N. ; Nishio, J. ; Ishida, Y. ; Takahashi, T. ; Suzuki, T. ; Tanaka, T. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.925-928,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
24.

Conference Proceedings
Conference Proceedings
24. Characterization of the Interfaces between SiC and Oxide Films by Spectroscopic Ellipsometry
Tomioka, Y. ; Iida, T. ; Midorikawa, M. ; Tukada, H. ; Yoshimoto, K. ; Hijikata, Y. ; Yaguchi, H. ; Yoshikawa, M. ; Ishida, Y. ; Kosugi, R. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1029-1032,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
25.

Conference Proceedings
Conference Proceedings
25. Epitaxial Growth of (11-20) 4H-SiC Using Substrate Grown in the [11-20] Direction
Kojima, K. ; Ohno, T. ; Senzaki, J. ; Fukuda, K. ; Fujimoto, T. ; Katsuno, M. ; Ohtani, N. ; Nishino, J. ; Masahara, K. ; Ishida, Y. ; Takahashi, T. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.195-198,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
26.

Conference Proceedings
Conference Proceedings
26. Simulation of High-Temperature SiC Epitaxial Growth Using Vertical, Quasi-Hot-Wall CVD Reactor
Hasegawa, M. ; Miyauchi, A. ; Masahara, K. ; Ishida, Y. ; Takahashi, T. ; Ohno, T. ; Nishio, J. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.227-230,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
27.

Conference Proceedings
Conference Proceedings
27. Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition
Nishio, J. ; Kushibe, M. ; Masahara, K. ; Kojima, K. ; Ohno, T. ; Ishida, Y. ; Takahashi, T. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.215-218,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
28.

Conference Proceedings
Conference Proceedings
28. High-Rate Epitaxial Growth of 4H-SiC Using a Vertical-Type, Quasi-Hot-Wall CVD Reactor
Masahara, K. ; Takahashi, T. ; Kushibe, M. ; Ohno, T. ; Nishio, J. ; Kojima, K. ; Ishida, Y. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.179-182,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
29.

Conference Proceedings
Conference Proceedings
29. The Investigation of 4H-SiC/SiO2 Interfaces by Optical and Electrical Measurements
Ishida, Y. ; Takahashi, T. ; Okumura, H. ; Jikimoto, T. ; Tsuchida, H. ; Yoshikawa, M. ; Tomioka, Y. ; Midorikawa, M. ; Hijikata, Y. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1013-1016,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
30.

Conference Proceedings
Conference Proceedings
30. Influence of the Crystalline Quality of Epitaxial Layers on Inversion Channel Mobility in 4H-SiC MOSFETs
Kojima, K. ; Ohno, T. ; Suzuki, S. ; Senzaki, J. ; Harada, S. ; Fukuda, K. ; Kushibe, M. ; Masahara, K. ; Ishida, Y. ; Takahashi, T. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1053-1056,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
31.

Conference Proceedings
Conference Proceedings
31. Effects of Steam Annealing on Electrical Characteristics of 3C-SiC Metal-Oxide-Semiconductor Structures
Yoshikawa, M. ; Kojima, K. ; Ohshima, T. ; Itoh, H. ; Okada, S. ; Ishida, Y.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1129-1132,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
32.

Conference Proceedings
Conference Proceedings
32. Relationship between the Current Direction in the Inversion Layer and the Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors on 3C-SiC
Ohshima, T. ; Lee, K.K. ; Ishida, Y. ; Kojima, K. ; Tanaka, Y. ; Takahashi, T. ; Yoshikawa, M. ; Okumura, H. ; Arai, K. ; Kamiya, T.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1405-1408,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
33.

Conference Proceedings
Conference Proceedings
33. Comparative Study of Heteroepitaxially and Homoepitaxially Grown 3C-SiC Films
Takahashi, T. ; Ishida, Y. ; Tsuchida, H. ; Kamata, I. ; Okumura, H. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.323-326,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
34.

Conference Proceedings
Conference Proceedings
34. 3C-SiC(100) Homoepitaxial Growth by Chemical Vapor Deposition and Schottky Barrier Junction Characteristics
Ishida, Y. ; Kushibe, M. ; Takahashi, T. ; Okumura, H. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.275-278,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
35.

Conference Proceedings
Conference Proceedings
35. Atomic and Electronic Structures of Grain Boundary in Chemical Vapor Deposited Diamond Thin Film
Zhang, Y. ; Ichinose, H. ; Ishida, Y. ; Ito, K. ; Nakanose, M.
Pub. info.: Diamond for electronic applications.  pp.355-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 416
36.

Conference Proceedings
Conference Proceedings
36. Control of Surface Morphologies for Epitaxial Growth on Low Off-Angle 4H-SiC (0001) Substrates
Masahara, K. ; Kushibe, M. ; Ohno, H. ; Kojima, K. ; Takahashi, T. ; Ishida, Y. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.135-138,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
37.

Conference Proceedings
Conference Proceedings
37. Simulation of High-Temperature SiC Epitaxial Growth Using Vertical, Quasi-Hot-Wall CVD Reactor
Hasegawa, M. ; Miyauchi, A. ; Masahara, K. ; Ishida, Y. ; Takahashi, T. ; Ohno, T. ; Nishio, J. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.227-230,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
38.

Conference Proceedings
Conference Proceedings
38. Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition
Nishio, J. ; Kushibe, M. ; Masahara, K. ; Kojima, K. ; Ohno, T. ; Ishida, Y. ; Takahashi, T. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.215-218,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
39.

Conference Proceedings
Conference Proceedings
39. High-Rate Epitaxial Growth of 4H-SiC Using a Vertical-Type, Quasi-Hot-Wall CVD Reactor
Masahara, K. ; Takahashi, T. ; Kushibe, M. ; Ohno, T. ; Nishio, J. ; Kojima, K. ; Ishida, Y. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.179-182,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
40.

Conference Proceedings
Conference Proceedings
40. Epitaxial Growth of (11-20) 4H-SiC Using Substrate Grown in the [11-20] Direction
Kojima, K. ; Ohno, T. ; Senzaki, J. ; Fukuda, K. ; Fujimoto, T. ; Katsuno, M. ; Ohtani, N. ; Nishino, J. ; Masahara, K. ; Ishida, Y. ; Takahashi, T. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.195-198,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
41.

Conference Proceedings
Conference Proceedings
41. Comparative Study of Heteroepitaxially and Homoepitaxially Grown 3C-SiC Films
Takahashi, T. ; Ishida, Y. ; Tsuchida, H. ; Kamata, I. ; Okumura, H. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.323-326,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
42.

Conference Proceedings
Conference Proceedings
42. 3C-SiC(100) Homoepitaxial Growth by Chemical Vapor Deposition and Schottky Barrier Junction Characteristics
Ishida, Y. ; Kushibe, M. ; Takahashi, T. ; Okumura, H. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.275-278,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
43.

Conference Proceedings
Conference Proceedings
43. Sensitive Detection of Defects in α and β SiC by Raman Scattering
Nakashima, S. ; Nakatake, Y. ; Ishida, Y. ; Takahashi, T. ; Okumura, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.629-632,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
44.

Conference Proceedings
Conference Proceedings
44. Influence of C/Si Ratio on the 4H-SiC (0001) Epitaxial Growth and a Keynote for High-Rate Growth
Ishida, Y. ; Takahashi, T. ; Kojima, K. ; Okumura, H. ; Arai, K. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.213-216,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
45.

Conference Proceedings
Conference Proceedings
45. 4H-SiC Carbon-Face Epitaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor Deposition
Kojima, K. ; Takahashi, T. ; Ishida, Y. ; Kuroda, S. ; Okumura, H. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.209-212,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
46.

Conference Proceedings
Conference Proceedings
46. Investigation of the Relationship between Defects and Electrical Properties of 3C-SiC Epilayers
Ishida, Y. ; Kushibe, M. ; Takahashi, T. ; Okumura, H. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.459-462,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
47.

Conference Proceedings
Conference Proceedings
47. Replication of Defects from 4H-SiC Wafer to Epitaxial Layer
Ohno, T. ; Yamaguchi, H. ; Kojima, K. ; Nishio, J. ; Masahara, K. ; Ishida, Y. ; Takahashi, T. ; Suzuki, T. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.447-450,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
48.

Conference Proceedings
Conference Proceedings
48. Investigation of the Relationship between Defects and Electrical Properties of 3C-SiC Epilayers
Ishida, Y. ; Kushibe, M. ; Takahashi, T. ; Okumura, H. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.459-462,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
49.

Technical Paper
Technical Paper
49. Effective and Selective Hydrogen Formation from Biomass through hydrothermal reaction
Ishida, Y. ; Hata, K. ; Tanifuji, K. ; Hasegawa, T. ; Kitagawa, K.
Pub. info.: AIAA meeting papers on disc.  2005.  [Reston, Va.].  American Institute of Aeronautics and Astronautics
Title of ser.: AIAA Paper : International Energy Conversion Engineering Conference and Exhibit (IECEC)
Ser. no.: 3rd
50.

Technical Paper
Technical Paper
50. Development of Crawl Control.
Inoue, G. ; Ishida, Y.
Pub. info.: 2008 SAE world congress : technical paper.  2008.  Warrendale, Penn..  Society of Automotive Engineers
Title of ser.: Society of Automotive Engineers technical paper series
Ser. no.: 2008
51.

Technical Paper
Technical Paper
51. A WIND TUNNEL TEST OF 22% SCALE MODEL OF A WINDMILL WITH A TWO-BLADED ROTOR OF 14m DIAMETER FOR FIELD TEST
Ishida, Y.
Pub. info.: NASA Technical Reports.  (NAL-TR-887),  pp.1-21,  1985.  National Aeronautics and Space Administration
52.

Technical Paper
Technical Paper
52. Experimental and Numerical Analysis of Laminar Flow Control at Mach 1.4
Yoshida, K. ; Ishida, Y. ; Noguchi, M. ; Ogoshi, H. ; Inagaki, K.
Pub. info.: AIAA paper.  pp.1-11,  1999.  American Institute of Aeronautics and Astronautics
Title of ser.: AIAA Paper : AIAA Fluid Dynamics Conference
Ser. no.: 1999
53.

Technical Paper
Technical Paper
53. Experimental and numerical analysis of laminar flow control at Mach 1.4
Yoshida, K. ; Ishida, Y. ; Noguchi, M. ; Ogoshi, H. ; Inagaki, K.
Pub. info.: AIAA paper.  pp.1-11,  1999.  American Institute of Aeronautics and Astronautics
Title of ser.: AIAA Paper : AIAA Fluid Dynamics Conference
Ser. no.: 1999
54.

Conference Proceedings
Conference Proceedings
54. Development of energy-discriminate CdTe imaging detector for hard x-ray
Aoki, T. ; Ishida, Y. ; Sakashita, D. ; Gnatyuk, V.A. ; Nakamura, A. ; Tomita, Y. ; Hatanaka, Y. ; Temmyo, J.
Pub. info.: Hard X-Ray and Gamma-Ray Detector Physics VI.  pp.196-205,  2004.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5540
55.

Technical Paper
Technical Paper
55. COSMIC RAY SIDEREAL DIURNAL VARIATION OF GALACTIC ORIGIN OBSERVED BY NEUTRON MONITORS
Ishida, Y. ; Nagashima, K. ; Mori, S. ; Morishita, I.
Pub. info.: NASA Technical Reports.  (NASA-CP-2376-Vol-5),  pp.1-4,  1985.  National Aeronautics and Space Administration