1.

Conference Proceedings
Conference Proceedings
1. Formation of Tungsten Ohmic Coutact on n-Type 6H-SiC by Pulsed Laser Processes
Nakashima,K. ; Eryu,O. ; Kurne,T. ; Nakata,T. ; Inoue,M.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.779-782,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
2.

Conference Proceedings
Conference Proceedings
2. Implantation of Al and B Acceptors into Alpha-SiC and pn Junction Diodes
Takemura,O. ; Kimoto,T. ; Matsunami,H. ; Nakata,T. ; Watanabe,M. ; Inoue,M.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.701-704,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
3.

Conference Proceedings
Conference Proceedings
3. Characterization of Deep Levels in SiC by Photoluminescence Spectroscopy and Mapping
Tajima,M. ; Kumagaya,Y. ; Nakata,T. ; Inoue,M. ; Nakamura,A.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.481-484,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268