1.

Conference Proceedings
Conference Proceedings
1. Hydrogen Diffusion Characterized by Hydrogen Enhanced Thermal Donor Formation in p-Type Czochralski Silicon at Temperatures Between 350 and 450℃
Huang, Y.L. ; Ma, Y. ; Job, R. ; Fahmer, W.R.
Pub. info.: High purity silicon VIII : proceedings of the international symposium.  pp.419-428,  2004.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-05
2.

Conference Proceedings
Conference Proceedings
2. Thermal Evolution of Hydrogen Related Defects in Silicon Investigated by u-Raman Spectroscopy
Ma, Y. ; Huang, Y.L. ; Job, R. ; Fahrner, W.R. ; Beaufort, M.-F. ; Barbot, J. -F.
Pub. info.: High purity silicon VIII : proceedings of the international symposium.  pp.385-394,  2004.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-05
3.

Conference Proceedings
Conference Proceedings
3. Morphology and Stress Investigations of Surface and Subsurface Regions of Plasma Hydrogenated and Annealed Czochralski Silicon
Job, R. ; Ma, Y. ; Huang, Y.L. ; Diingen, W.
Pub. info.: High purity silicon VIII : proceedings of the international symposium.  pp.407-418,  2004.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-05
4.

Conference Proceedings
Conference Proceedings
4. μ-Raman Spectra Analysis of the Evolution of Hydrogen Related Defects and Void Formation in the Silicon Ion-Cut Process
Dungen, W. ; Job, R. ; Ma, Y. ; Huang, Y.L. ; Fahrner, W.R. ; Keller, L.O. ; Horstmann, J.T.
Pub. info.: Semiconductor defect engineering - materials, synthetic structures and devices : symposium held March 28-April 1, 2005, San Francisco, California, U.S.A..  pp.503-508,  2005.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 864
5.

Conference Proceedings
Conference Proceedings
5. Void Formation in Hydrogen Implanted and Subsequently Plasma Hydrogenated and Annealed Czochralski Silicon
Job, R. ; Dungen, W. ; Ma, Y. ; Huang, Y.L. ; Horstmann, J.T.
Pub. info.: Semiconductor defect engineering - materials, synthetic structures and devices : symposium held March 28-April 1, 2005, San Francisco, California, U.S.A..  pp.487-492,  2005.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 864
6.

Conference Proceedings
Conference Proceedings
6. P-N Junction Diodes Fabricated Based on Donor Formation in Plasma Hydrogenated P-Type Czochralski Silicon
Huang, Y.L. ; Simoen, E. ; Job, R. ; Claeys, C. ; Dungen, W. ; Ma, Y. ; Fahrner, W.R. ; Versluys, J. ; Clauws, P.
Pub. info.: Semiconductor defect engineering - materials, synthetic structures and devices : symposium held March 28-April 1, 2005, San Francisco, California, U.S.A..  pp.307-312,  2005.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 864