In Situ Plasma Analysis, Fluorine Incorporation, Thermostability, Stress, and Hardness Comparison of Fluorinated Amorphous Carbon and Hydrogenated Amorphous Carbon Thin Films Deposited on Si by Plasma Enhanced Chemical Vapor Deposition

In Situ Plasma Analysis, Fluorine Incorporation, Thermostability, Stress, and Hardness Comparison of Fluorinated Amorphous Carbon and Hydrogenated Amorphous Carbon Thin Films Deposited on Si by Plasma Enhanced Chemical Vapor Deposition

Author(s):

Publication title:

Low-dielectric constant materials V : symposium held April 5-8, 1999, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

565

Pub. Year:

1999

Page(from):

285

Page(to):

290

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558994720 [1558994726]

Language:

English

Call no.:

M23500/565

Type:

Conference Proceedings

Details

TDL ID:	ZA00014191
Series ID:	PA00000011
Conf. info. (Name):	Symposium on low-dielectric constant materials
Conf. info. (Number):	5th
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1999.04.05-1999.04.08

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