1.

Conference Proceedings
Conference Proceedings
1. Impact of High-k Properties on MOSFET Electrical Characteristics
Pantisano, Ll. ; Ragnarsson, L. -A. ; Houssa, M. ; Degraeve, R. ; Groeseneken, G. ; Schram, T. ; Degendt, S. ; Heyns, M. ; Afanas'ev, V.
Pub. info.: Defects in high-κ gate dielectric stacks : nano-electronic semiconductor devices.  pp.97-109,  2006.  Dordrecht.  Springer
Title of ser.: NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.: 220
2.

Conference Proceedings
Conference Proceedings
2. 13 High-k Gate Stack Engineering - towards Meeting Low Standby Power and High Performance Targets
De Gendt, S. ; Brunco, D. ; Caymax, M. ; Canard, T. ; Date, L. ; Delabie, A. ; Deweerd, W. ; Groeseneken, G. ; Houssa, M. ; Hyun, S. ; Kaushik, V. ; Kubicek, S. ; Maes, J. ; Pantisano, L. ; Ragnarsson, L. ; Rohr, E. ; Schram, T. ; Shimamoto, Y. ; Sleeckx, E. ; Vandervorst, W. ; Van Elshocht, S. ; Yamamoto, K. ; Witters, T. ; Zhao, C. ; Zimmerman, P. ; Heyns, M. (Invited Paper)
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium.  pp.109-117,  2005.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-05
3.

Conference Proceedings
Conference Proceedings
3. On the impact of high-K properties (and defects) on MOSFET el ectrical characteristics (invited paper)
Pantisano, L. ; Afanas'ev, V. ; Ragnarsson, L-A. ; Houssa, M. ; Degraeve, R. ; Groeseneken, G. ; Schram, T. ; DeGendt, S. ; Heyns, M.
Pub. info.: Crystalline defects and contamination: their impact and control in device manufacturing IV : DECON 2005 : proceedings of the Satellite Symposium to ESSDERC 2005, Grenoble, France.  pp.144-158,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-10