1.

Conference Proceedings
Conference Proceedings
1. Impact of High-k Properties on MOSFET Electrical Characteristics
Pantisano, Ll. ; Ragnarsson, L. -A. ; Houssa, M. ; Degraeve, R. ; Groeseneken, G. ; Schram, T. ; Degendt, S. ; Heyns, M. ; Afanas'ev, V.
Pub. info.: Defects in high-κ gate dielectric stacks : nano-electronic semiconductor devices.  pp.97-109,  2006.  Dordrecht.  Springer
Title of ser.: NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.: 220
2.

Conference Proceedings
Conference Proceedings
2. Influence of pre and post process conditions on the composition of thin Si3N4 thin films (3 nm) studied by XPS and TOFSIMS
Conard, T. ; Witte, H. De ; Vandervorst, W. ; Houssa, M. ; Heyns, M. ; Pomarede, C. ; Werkhoven, C.
Pub. info.: Structure and electronic properties of ultrathin dielectric films on silicon and related structures : symposium held November 29-December 1, 1999, Boston, Massachusetts, U.S.A..  pp.69-,  2000.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 592
3.

Conference Proceedings
Conference Proceedings
3. On the impact of high-K properties (and defects) on MOSFET el ectrical characteristics (invited paper)
Pantisano, L. ; Afanas'ev, V. ; Ragnarsson, L-A. ; Houssa, M. ; Degraeve, R. ; Groeseneken, G. ; Schram, T. ; DeGendt, S. ; Heyns, M.
Pub. info.: Crystalline defects and contamination: their impact and control in device manufacturing IV : DECON 2005 : proceedings of the Satellite Symposium to ESSDERC 2005, Grenoble, France.  pp.144-158,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-10