1.

Conference Proceedings
Conference Proceedings
1. X-ray Standing Wave Investigations of Si Dopant Incorporation in GaN
Siebert, M. ; Schmidt, Th. ; Flege, J. I. ; Zegenhagen, J. ; Lee, T. -L. ; Figge, S. ; Hommel, D. ; Falta, J.
Pub. info.: GaN, AlN, InN and related materials : symposium held November 28-December 2, 2005, Boston, Massachusetts, U.S.A..  pp.35-42,  2006.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 892
2.

Conference Proceedings
Conference Proceedings
2. New laser sources for plastic optical fibers: ZnSe-based quantum well and quantum dot laser diodes with 560-nm emission (Invited Paper)
Klude, M. ; Passow, T. ; Alexe, G. ; Heinke, H. ; Hommel, D.
Pub. info.: Design, fabrication, and characterization of photonic devices : 27-30 November 2001, Singapore.  pp.260-270,  2001.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4594
3.

Conference Proceedings
Conference Proceedings
3. Four-Wave Mixing Spectroscopy of Excitonic Interactions in ZnSe/ZnMgSSe Quantum Welis
Kalt, H. ; Wachter, S. ; Ltlerssen, D. ; Ohkawa, K. ; Hommel, D.
Pub. info.: Proceedings of the International Conference on Excitonic Processes in Condensed Matter : EXCON '98.  pp.216-221,  1998.  Pennington, N. J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-25
4.

Conference Proceedings
Conference Proceedings
4. Studies on Carbon as Alternative p-Type Dopant for Gallium Nitride
Birkle, U. ; Fehrer, M. ; Kirchner, V. ; Einfeldt, S. ; Hommel, D. ; Strauf, S. ; Michler, P. ; Gutowski, J.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G5.6.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
5.

Conference Proceedings
Conference Proceedings
5. MBE Growth of GaN on NdGaO3(101)
Fechtmann, C. ; Kirchner, V. ; Einfeldt, S. ; Heinke, H. ; Hommel, D. ; Lukasiewicz, T. ; Luczynski, Z. ; Baranowski, J.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.295-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
6.

Conference Proceedings
Conference Proceedings
6. Influence of Doping on the Lattice Dynamics of Gallium Nitride
Kaschner, A. ; Siegle, H. ; Hoffmann, A. ; Thomsen, C. ; Birkle, U. ; Einfeldt, S. ; Hommel, D.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G3.57.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
7.

Conference Proceedings
Conference Proceedings
7. Statistical Analysis of Local Composition and Luminescence in InGaN Grown by Molecular Beam Epitaxy
Einfeldt, S. ; Bottcher, T. ; Hommel, D. ; Selke, H. ; Ryder, P. L. ; Bertram, F. ; Riemann, T. ; Rudloff, D. ; Christen, J.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G3.33.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
8.

Conference Proceedings
Conference Proceedings
8. Deep Trap Characterization in GaN Using Thermal and Optical Admittance Spectroscopy
KrTschil, A. ; Witte, H. ; Lisker, M. ; Christen, J. ; Birkle, U. ; Einfeldt, S. ; Hommel, D. ; Topf, M. ; Meyer, B. K.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.887-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
9.

Conference Proceedings
Conference Proceedings
9. High Pressure Annealing of HVPE GaN Free-Standing Films: Redistribution of Defects and Stress
Paskova, T. ; Suski, T. ; Bockowski, M. ; Paskov, P. P. ; Darakchieva, V. ; Monemar, B. ; Tuomisto, F. ; Saarinen, K. ; Ashkenov, N. ; Schubert, M. ; Roder, C. ; Hommel, D.
Pub. info.: GaN, AIN, InN and their alloys : symposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A..  pp.429-434,  2005.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 831
10.

Conference Proceedings
Conference Proceedings
10. Microstructure of highly p-type doped GaN sub-contact layers for low-resistivity contacts
Kroger, R. ; Dennemarck, J. ; Bottcher, T. ; Figge, S. ; Hommel, D.
Pub. info.: GaN, AIN, InN and their alloys : symposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A..  pp.411-416,  2005.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 831
11.

Conference Proceedings
Conference Proceedings
11. Characterization of Stress Relaxation, Dislocations and Crystallographic Tilt Via X-ray Microdiffraction in GaN (0001) Layers Grown by Maskless Pendeo-Epitaxy
Barabash, R. I. ; Ice, G. E. ; Liu, W. ; Einfeldt, S. ; Hommel, D. ; Roskowski, A. M. ; Davis, R. F.
Pub. info.: Thin films : stresses and mechanical properties XI : symposium held March 28-April 1, 2005, San Francisco, California, U.S.A..  pp.115-120,  2005.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 875
12.

Conference Proceedings
Conference Proceedings
12. Investigation of Green Emitting Monolithic II-VI Vertical Cavity Surface Emitting Laser
Kruse, C. ; Alexe, G. ; Kroger, R. ; Klude, M. ; Heinke, H. ; Hommel, D. ; Ulrich, S. ; Michler, P. ; Gutowski, J.
Pub. info.: Materials and devices for optoelectronics and microphotonics : symposium held April 1-5, 2002, San Francisco, California, U.S.A..  pp.141-148,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 722
13.

Conference Proceedings
Conference Proceedings
13. Optical Evaluation of Pretreated InGaN Quantum Well Structures
Bottcher, T. ; Bertram, F. ; Bergman, P. ; Ueta, A. ; Christen, J. ; Hommel, D.
Pub. info.: GaN and related alloys - 2003 : symposium held December 1-5, 2003, Boston, Massachusetts, U.S.A..  pp.643-648,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 798
14.

Conference Proceedings
Conference Proceedings
14. Compositional Fluctuations in AlxGa1-xN Layers Grown on 6H-SiC (0001) by Metal Organic Vapor Phase Epitaxy
Kroger, R. ; Einfeldt, S. ; Reitmeier, Z.J. ; Chierchia, R. ; Ryder, P. ; Hommel, D. ; Davis, R.F.
Pub. info.: GaN and related alloys - 2002 : symposium held December 2-6, Boston, Massachusetts, U.S.A..  pp.255-260,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 743
15.

Conference Proceedings
Conference Proceedings
15. Micro-Photoluminescence studies of excitonic and multiexcitonic states of quantum dot-like localization centers in InGaN/GaN structures
Sebald, K. ; Lohmeyer, H. ; Gutowski, J. ; Einfeldt, S. ; Roder, C. ; Hommel, D.
Pub. info.: GaN, AIN, InN and their alloys : symposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A..  pp.299-304,  2005.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 831
16.

Conference Proceedings
Conference Proceedings
16. Growth evolution of(Zn,Cd)Se quantum dots deduced from spatially resolved structural and optical characterization
Leonard, K. ; Hommel, D. ; Stockmann, A. ; Selke, H. ; Suefert, J. ; Weigand, R. ; Bacher, G. ; Forchel, A.
Pub. info.: Semiconductor quantum dots : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.325-,  2000.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 571
17.

Conference Proceedings
Conference Proceedings
17. Thermal expansion of GaN at low temperatures - a comparison of bulk and homo- and heteroepitaxial layers
Kirchner, V. ; Heinke, H. ; Einfeldt, S. ; Hommel, D. ; Domagala, J. Z. ; Leszczynski, M.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W5.7.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
18.

Conference Proceedings
Conference Proceedings
18. Influence of Structural Properties and of Growth Conditions on Exciton Properties in ZnCdSe/ZnSe Quantum Well Structures
Godlewski, M. ; Guziewicz, E. ; Leonardi, K. ; Hommel, D. ; Bergman, P.J. ; Monemar, B.
Pub. info.: Ultrafast phenomena in semiconductors 2001 : proceedings of the 11th International Symposium on Ultrafast Phenomena in Semiconductors (11-UFPS), held in Vilnius, Lithuania 27-29 August 2001.  pp.63-66,  2002.  Zurich-Uetikon, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 384-385
19.

Conference Proceedings
Conference Proceedings
19. Microscopic emission properties of nonpolar a-plane GaN grown by HVPE (Invited Paper) [6121-05]
Paskova, T. ; Kroeger, R. ; Paskov, P.P. ; Figge, S. ; Hommel, D. ; Monemar, B. ; Haskell, B. ; Fini, P. ; Speck, J.S. ; Nakamura, S.
Pub. info.: Gallium Nitride Materials and Devices.  pp.612106-,  2006.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 6121