1.

Conference Proceedings
Conference Proceedings
1. X-ray Standing Wave Investigations of Si Dopant Incorporation in GaN
Siebert, M. ; Schmidt, Th. ; Flege, J. I. ; Zegenhagen, J. ; Lee, T. -L. ; Figge, S. ; Hommel, D. ; Falta, J.
Pub. info.: GaN, AlN, InN and related materials : symposium held November 28-December 2, 2005, Boston, Massachusetts, U.S.A..  pp.35-42,  2006.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 892
2.

Conference Proceedings
Conference Proceedings
2. New laser sources for plastic optical fibers: ZnSe-based quantum well and quantum dot laser diodes with 560-nm emission (Invited Paper)
Klude, M. ; Passow, T. ; Alexe, G. ; Heinke, H. ; Hommel, D.
Pub. info.: Design, fabrication, and characterization of photonic devices : 27-30 November 2001, Singapore.  pp.260-270,  2001.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4594
3.

Conference Proceedings
Conference Proceedings
3. Four-Wave Mixing Spectroscopy of Excitonic Interactions in ZnSe/ZnMgSSe Quantum Welis
Kalt, H. ; Wachter, S. ; Ltlerssen, D. ; Ohkawa, K. ; Hommel, D.
Pub. info.: Proceedings of the International Conference on Excitonic Processes in Condensed Matter : EXCON '98.  pp.216-221,  1998.  Pennington, N. J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-25
4.

Conference Proceedings
Conference Proceedings
4. Studies on Carbon as Alternative p-Type Dopant for Gallium Nitride
Birkle, U. ; Fehrer, M. ; Kirchner, V. ; Einfeldt, S. ; Hommel, D. ; Strauf, S. ; Michler, P. ; Gutowski, J.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G5.6.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
5.

Conference Proceedings
Conference Proceedings
5. MBE Growth of GaN on NdGaO3(101)
Fechtmann, C. ; Kirchner, V. ; Einfeldt, S. ; Heinke, H. ; Hommel, D. ; Lukasiewicz, T. ; Luczynski, Z. ; Baranowski, J.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.295-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
6.

Conference Proceedings
Conference Proceedings
6. Influence of Doping on the Lattice Dynamics of Gallium Nitride
Kaschner, A. ; Siegle, H. ; Hoffmann, A. ; Thomsen, C. ; Birkle, U. ; Einfeldt, S. ; Hommel, D.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G3.57.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
7.

Conference Proceedings
Conference Proceedings
7. Statistical Analysis of Local Composition and Luminescence in InGaN Grown by Molecular Beam Epitaxy
Einfeldt, S. ; Bottcher, T. ; Hommel, D. ; Selke, H. ; Ryder, P. L. ; Bertram, F. ; Riemann, T. ; Rudloff, D. ; Christen, J.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G3.33.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
8.

Conference Proceedings
Conference Proceedings
8. Deep Trap Characterization in GaN Using Thermal and Optical Admittance Spectroscopy
KrTschil, A. ; Witte, H. ; Lisker, M. ; Christen, J. ; Birkle, U. ; Einfeldt, S. ; Hommel, D. ; Topf, M. ; Meyer, B. K.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.887-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
9.

Conference Proceedings
Conference Proceedings
9. High Pressure Annealing of HVPE GaN Free-Standing Films: Redistribution of Defects and Stress
Paskova, T. ; Suski, T. ; Bockowski, M. ; Paskov, P. P. ; Darakchieva, V. ; Monemar, B. ; Tuomisto, F. ; Saarinen, K. ; Ashkenov, N. ; Schubert, M. ; Roder, C. ; Hommel, D.
Pub. info.: GaN, AIN, InN and their alloys : symposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A..  pp.429-434,  2005.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 831
10.

Conference Proceedings
Conference Proceedings
10. Microstructure of highly p-type doped GaN sub-contact layers for low-resistivity contacts
Kroger, R. ; Dennemarck, J. ; Bottcher, T. ; Figge, S. ; Hommel, D.
Pub. info.: GaN, AIN, InN and their alloys : symposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A..  pp.411-416,  2005.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 831