1.

Conference Proceedings
Conference Proceedings
1. Bulk Growth of Silicon Carbide Crystals: Analysis of Growth Rate and Crystal Quality
Hofmann, D. ; Eckstein, R. ; Kadinski, L. ; Kolbl, M. ; Muller, M. ; Muller, St. G. ; Schmitt, E. ; Weber, A. ; Winnacker, A.
Pub. info.: Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A..  pp.301-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 483
2.

Conference Proceedings
Conference Proceedings
2. Analysis of the Sublimation Growth Process of Silicon Carbide Bulk Crystals
Eckstein, R. ; Hofmann, D. ; Makarov, Y. ; Muller, St. G. ; Pensl, G. ; Schmitt, E. ; Winnacker, A.
Pub. info.: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.215-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 423
3.

Conference Proceedings
Conference Proceedings
3. Absorption Measurements and Doping Level Evaluation in n-Type and p-Type 4H-SiC and 6H-SiC
Weingaertner, R. ; Bickermann, M. ; Hofmann, D. ; Rasp, M. ; Straubinger, T.L. ; Wellmann, P.J. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.397-400,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
4.

Conference Proceedings
Conference Proceedings
4. Top-seeded Solution Growth of Bulk SiC: Search for Fast Growth Regimes
Epelbaum, B. M. ; Hofmann, D. ; Muller, M. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.107-110,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
5.

Conference Proceedings
Conference Proceedings
5. Digital X-Ray Imaging of SiC PVT Process: Analysis of Crystal Growth and Powder Source Degradation
Wellmann, P. J. ; Bickermann, M. ; Hofmann, D. ; Kadinski, L. ; Selder, M. ; Straubinger, T. L. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.71-74,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
6.

Conference Proceedings
Conference Proceedings
6. Growth Rate Control in SiC-Physical Vapor Transport Method Through Heat Transfer Modeling and Non-Stationary Process Conditions
Straubinger, T. L. ; Bickermann, M. ; Grau, M. ; Hofmann, D. ; Kadinski, L. ; Muller, S. G. ; Selder, M. ; Wellmann, P. J. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.39-42,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
7.

Conference Proceedings
Conference Proceedings
7. Hollow Defect Elimination During Solution Growth of SiC
Epelbaum, B. M. ; Hofmann, D. ; Mueller, M. ; Winnacker, A.
Pub. info.: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 640
8.

Conference Proceedings
Conference Proceedings
8. Analysis on the Formation and Elimination of Filamentary and Planar Voids in Silicon Carbide Bulk Crystals
Hofmann, D. ; Bickermann, M. ; Hartung, W. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.445-448,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
9.

Conference Proceedings
Conference Proceedings
9. Incorporation of Boron and the Role of Nitrogen as a Compensation Source in SiC Bulk Crystal Growth
Bickermann, M. ; Weingartner, R. ; Hofmann, D. ; Straubinger, T.L. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.127-130,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
10.

Conference Proceedings
Conference Proceedings
10. On the Preparation of Vanadium-Doped Semi-Insulating SiC Bulk Crystals
Bickermann, M. ; Hofmann, D. ; Straubinger, T.L. ; Weingartner, R. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.139-142,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393