Characterisation of GaAs/AlGaAs heterostructures grown by OMVPE using trimethylamine alane as a new alu-minum source
- Author(s):
Hobson,W.S. McAfee,S.R. Jones,K.S. Paroskevopoulos,N.C. Abernathy,C.R. Sputz,S.K. Harris,T.D. Schnoes,M.Lamont Pearton,S.J. - Publication title:
- Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991
- Title of ser.:
- Materials science forum
- Ser. no.:
- 83-87
- Pub. Year:
- 1992
- Vol.:
- Pt.2
- Page(from):
- 1063
- Page(to):
- 1068
- Pub. info.:
- Zurich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878496280 [0878496289]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
THE INCORPORATION AND BEHAVIOR OF OXYGEN IN AlGaAs GROWN BY MOMBE USING TRIMETHYLAMINE ALANE
Materials Research Society |
7
Conference Proceedings
Carbon, Hydrogen, and Oxygen Incorporation in III-V Semiconductors Grown by OMVPE
Electrochemical Society |
Materials Research Society |
8
Conference Proceedings
Effect of low temperature growth on impurity and defect incorporation in AlGaAs grown by MOMBE
Trans Tech Publications |
MRS - Materials Research Society |
9
Conference Proceedings
Effect of Annealing on GaAs:C, AlxGa1-xAs:C, and AlAs: Grown by Metalorganic Molecular Beam Epitaxy
Electrochemical Society |
Electrochemical Society |
Materials Research Society |
Materials Research Society |
11
Conference Proceedings
Selective dry etching of the GaN/InN/AlN, GaAs/AlGaAs and GaAs/InGaP systems
Materials Research Society |
Materials Research Society |
Materials Research Society |