1.

Conference Proceedings
Conference Proceedings
1. IMPLANT ISOLATION OF DEVICE STRUCTURES CONTAINING BURIED, HIGHLY-DOPED LAYERS
Pearton, S.J. ; Ren, F. ; D'asaro, L.A. ; Hobson, W.S. ; Fullowan, T.R. ; Lothian, J. ; Abernathy, C.R. ; Kopf, R.F. ; Kuo, J.-M.
Pub. info.: Long-wavelength semiconductor devices, materials, and processes : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A..  pp.451-458,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 216
2.

Conference Proceedings
Conference Proceedings
2. GaAs QUANTUM WELL INFRARED PHOTODETECTORS GROWN BY OMVPE
Hobson, W.S. ; Zussman, A. ; Levine, B.F. ; Pearton, S.J. ; Swaminathan, V. ; Luther, L.C.
Pub. info.: Long-wavelength semiconductor devices, materials, and processes : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A..  pp.501-506,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 216
3.

Conference Proceedings
Conference Proceedings
3. TEMPERATURE DEPENDENCE OF ETCH RATE AND RESIDUAL DAMAGE IN REACTIVELY ION ETCHED GaAs AND A1GaAs
Pearton, S.J. ; Jones, K.S. ; Chakabarti, U.K. ; Emerson, B. ; Lane, E. ; Vasile, M.J. ; Fullowan, T.R. ; Hobson, W.S. ; Short, K.T. ; Haegel, N.M.
Pub. info.: Laser and particle-beam chemical processes on surfaces : symposium held November 29-December 2, 1988, Boston, Massachusetts, U.S.A..  pp.489-494,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 129
4.

Conference Proceedings
Conference Proceedings
4. REACTIVE ION ETCHING OF In-BASED III-V SEMICONDUCTORS COMPARISON OF Cl AND C2H6 CHEMISTRIES
Pearton, S.J. ; Chakrabarti, U.K. ; Baiocchi, F.A. ; Hobson, W.S.
Pub. info.: In-situ patterning : selective area deposition and etching : symposium held November 29-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.417-424,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 158
5.

Conference Proceedings
Conference Proceedings
5. THE INCORPORATION AND BEHAVIOR OF OXYGEN IN AlGaAs GROWN BY MOMBE USING TRIMETHYLAMINE ALANE
Abernathy, C.R. ; Song, J. ; Hobson, W.S. ; Pearton, S.J. ; Ren, F. ; Bohling, D.A. ; Muhr, G.T.
Pub. info.: Chemical perspectives of microelectronic materials II : symposium held November 26-28, 1990, Boston, Massachusetts, U.S.A..  pp.183-194,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 204
6.

Conference Proceedings
Conference Proceedings
6. High Performance Small Area Contact GaN/AlGaN HBTs
Lee, K.P. ; Zhang, A.P. ; Ren, F. ; Han, J. ; Hobson, W.S. ; Pearton, S.J.
Pub. info.: III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia.  pp.161-166,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-1
7.

Conference Proceedings
Conference Proceedings
7. Performance of Intra-Cavity Contacted, Shallow Implant Apertured Vertical-Cavity Surface Emitting Lasers *
Hobson, W.S. ; Lopata, J. ; Chirovsky, L.M.F. ; Chu, S.N.G. ; Dang, G. ; Ren, F. ; Tayahi, M.B. ; Pearton, S.J.
Pub. info.: III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia.  pp.265-272,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-1
8.

Conference Proceedings
Conference Proceedings
8. Wet and Dry Etch Selectivity For the GaAs/AlGaAs and GaAs/InGaP Systems
Hays, D. ; Abernathy, C.R. ; Pearton, S.J. ; Ren, F. ; Hobson, W.S.
Pub. info.: Compound semiconductor power transistors and : State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIX).  pp.201-212,  1998.  Pennington, N. J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-12
9.

Conference Proceedings
Conference Proceedings
9. High Microwave Power ECR Etching of III-V Semiconductors in CH4/H2/Ar
Lee, J.W. ; Pearton, S.J. ; Lambers, E.S. ; Mileham, J.R. ; Abernathy, C.R. ; Hobson, W.S. ; Ren, F. ; Shul, R.J.
Pub. info.: Proceedings of the Twenty-fourth State-of-the-Art Program on Compound Semiconductors.  pp.203-213,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-2
10.

Conference Proceedings
Conference Proceedings
10. PROPERTIES OF Pt/Ti CONTACTS TO III-V MATERIALS
Katz, A. ; Nakahara, S. ; Chu, S.N.G. ; Weir, B.E. ; Abernathy, C.R. ; Hobson, W.S. ; Pearton, S.J. ; Savin, W.
Pub. info.: Long-wavelength semiconductor devices, materials, and processes : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A..  pp.305-312,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 216
11.

Conference Proceedings
Conference Proceedings
11. ION IMPLANT ACTIVATION AND REDISTRIBUTION IN AlXGa1-XAs
Pearton, S.J. ; Hobson, W.S. ; Von Neida, A.E. ; Haegel, N.M. ; Jones, K.S. ; Morris, N. ; Sealy, B.J.
Pub. info.: Beam-solid interactions : physical phenomena : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.665-670,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 157
12.

Conference Proceedings
Conference Proceedings
12. PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY OF MOCVD-GROWN: GaAs:V
Kao, Y.J. ; Haegel, N.M. ; Hobson, W.S.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.63-68,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
13.

Conference Proceedings
Conference Proceedings
13. HYDROGEN PASSIVATION OF INTERFACIAL DEFECTS IN MOCVD GROWN GaAs/InP
Swaminathan, V. ; Chakrabarti, U.K. ; Hobson, W.S. ; Caruso, R. ; Lopata, J. ; Pearton, S.J.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.489-494,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
14.

Conference Proceedings
Conference Proceedings
14. ACCEPTOR DELTA-DOPING IN GaAs
Hobson, W.S. ; Pearton, S.J. ; Abernathy, C.R. ; Cabaniss, G.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.855-860,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
15.

Conference Proceedings
Conference Proceedings
15. GROWTH AND CHARACTERIZATION OF GaAs-BASED HETEROSTRUCTURES ON Si BY MOCVD
Hobson, W.S. ; Pearton, S.J. ; Short, K.T. ; Jones, K.S. ; Vernon, S.M. ; Jacobson, D.C. ; Abernathy, C.R. ; Caruso, R.
Pub. info.: Heteroepitaxy on silicon : fundamentals, structure, and devices : symposium held April 5-8, 1988, Reno, Nevada, U.S.A..  pp.147-154,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 116
16.

Conference Proceedings
Conference Proceedings
16. ELEVATED TEMPERATURE REACTIVE ION ETCHING OF GaAs AND AlGaAs IN C2H6/H2
Pearton, S.J. ; Hobson, W.S. ; Jones, K.S.
Pub. info.: In-situ patterning : selective area deposition and etching : symposium held November 29-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.425-430,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 158
17.

Conference Proceedings
Conference Proceedings
17. ALTERNATIVE GROUP V PRECURSORS FOR THE GROWTH OF Al-BASED III-V EPITAXIAL LAYERS BY OMVPE
Hobson, W.S. ; Geva, M.
Pub. info.: Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A..  pp.93-98,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 282
18.

Conference Proceedings
Conference Proceedings
18. REDUCTION OF SIDEWALL ROUGHNESS DURING DRY ETCHING OF SiO2
Ren, F. ; Pearton, S.J. ; Lothian, J.R. ; Abernathy, C.R. ; Hobson, W.S.
Pub. info.: Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A..  pp.529-536,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 282
19.

Conference Proceedings
Conference Proceedings
19. DRY SURFACE CLEANING OF PLASMA-ETCHED HEMTs
Pearton, S.J. ; Ren, F. ; Katz, A. ; Chakrabarti, U.K. ; Lane, E. ; Hobson, W.S. ; Kopf, R.F. ; Abernathy, C.R. ; Wu, C.S. ; Bohling, D.A. ; Ivankovits, J.C.
Pub. info.: Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A..  pp.131-138,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 282
20.

Conference Proceedings
Conference Proceedings
20. IODINE-BASED DRY ETCHING CHEMISTRIES FOR InP AND RELATED COMPOUNDS
Pearton, S.J. ; Chakrabarti, U.K. ; Katz, A. ; Abernathy, C.R. ; Hobson, W.S. ; Ren, F. ; Fullowan, T.R.
Pub. info.: Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A..  pp.123-130,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 282
21.

Conference Proceedings
Conference Proceedings
21. Investigation of Wet Chemical Etching of InGaAlP Alloys
Lee, J.W. ; Santana, C.J. ; Abernathy, C.R. ; Pearton, S.J. ; Ren, F. ; Hobson, W.S. ; Lothian, J.R. ; Wu, C.S.
Pub. info.: Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII).  pp.316-326,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-21
22.

Conference Proceedings
Conference Proceedings
22. Damage Investigation of GaAs and InGaP Dry Etched with an Electron Cyclotron Resonance Source
Cole, M.W. ; Han, W.Y. ; Pfeffer, R.L. ; Eckart, D.W. ; Pang, S.W. ; Ko, K.K. ; Ren, F. ; Hobson, W.S. ; Lothian, J.R. ; Lopata, J. ; Caballero, J.A. ; Pearton, S.J.
Pub. info.: Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII).  pp.293-306,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-21
23.

Conference Proceedings
Conference Proceedings
23. Extremely High Etching Rate of In-Based III-V Semiconductors in BCl3/N2 Based Plasma
Ren, F. ; Pearton, S.J. ; Hobson, W.S. ; Lothian, J.R. ; Lopata, J. ; Cole, M.W. ; Caballero, J.A.
Pub. info.: Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII).  pp.346-353,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-21
24.

Conference Proceedings
Conference Proceedings
24. Demonstration of Enhancement-Mode p-Channel GaAs MOSFETs with Ga2O3 (Ga2O3) passivation
Ren, F. ; Hong, M.W. ; Hobson, W.S. ; Kuo, J.M. ; Lothian, J.R. ; Mannaerts, J.P. ; Kwo, J. ; Chu, S.N.G. ; Chen, Y.K. ; Cho, A.Y.
Pub. info.: Proceedings of the twenty-sixth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXVI).  pp.84-90,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-1
25.

Conference Proceedings
Conference Proceedings
25. Selective dry etching of the GaN/InN/AlN, GaAs/AlGaAs and GaAs/InGaP systems
Hays, D.C. ; Abernathy, C.R. ; Hobson, W.S. ; Pearton, S.J. ; Han, J. ; Shul, R.J. ; Cho, H. ; Jung, K.B. ; Ren, F. ; Hahn, Y.B.
Pub. info.: Compound semiconductor surface passivation and novel device processing : symposium held April 5-7, 1999, San Francisco, California, U.S.A..  pp.281-286,  1999.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 573
26.

Conference Proceedings
Conference Proceedings
26. P-GaAs Base Regrowth For GaN HBTs And BJTs
Dang, Gerard ; Zhang, A.P. ; Cao, X.A. ; Ren, F. ; Pearton, S.J. ; Cho, H. ; Hobson, W.S. ; Lopata, J. ; Van Hove, J.M. ; Klaassen, J.J. ; Polley, C.J. ; Wowchack, A.M. ; Chow, P.P. ; King, D.J.
Pub. info.: Wide-bandgap electronic devices.  pp.T6.13-,  2001.  Warrendale, PA..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 622
27.

Conference Proceedings
Conference Proceedings
27. REACTIVE ION ETCHING OF III-V SEMICONDUCTORS USING HYDROGENATED CHLOROFLUOROCARBON MIXTURES
Pearton, S.J. ; Hobson, W.S. ; Chakrabarti, U.K. ; Derkits, G.E. ; Perley, A.P.
Pub. info.: Surface chemistry and beam-solid interactions : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A..  pp.37-42,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 201
28.

Conference Proceedings
Conference Proceedings
28. Carbon, Hydrogen, and Oxygen Incorporation in III-V Semiconductors Grown by OMVPE
Hobson, W.S.
Pub. info.: Proceedings of the Twenty-first State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXI).  pp.30-49,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-34
29.

Conference Proceedings
Conference Proceedings
29. Effect of Annealing on GaAs:C, AlxGa1-xAs:C, and AlAs: Grown by Metalorganic Molecular Beam Epitaxy
MacKenzie, J.D. ; Abernathy, C.R. ; Pearton, S.J. ; Chu, S.N.G. ; Hobson, W.S.
Pub. info.: Proceedings of the Twenty-first State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXI).  pp.70-77,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-34
30.

Conference Proceedings
Conference Proceedings
30. Kinetics of AlxGa1-xAs Oxidation Layer by Capacitance- Voltage Technique*
Dang, G. ; Luo, B. ; Mehandru, R. ; Ren, F. ; Hobson, W.S. ; Lopata, J. ; Tayahi, M ; Chu, S.N.G. ; Pearton, S.J. ; Chang, W. ; Shen, H.
Pub. info.: State-of-the-art program on compound semiconductors XXXVI and wide bandgap semiconductors for photonic and electronic devices and sensors II : proceedings of the international symposia.  pp.225-231,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-3
31.

Conference Proceedings
Conference Proceedings
31. Silicon Nitride Passivation for InP Based Devices
Ren, F. ; Buckley, N. ; Lee, K. ; Pearton, S.J. ; Bartynski, R.A. ; Constantine, C. ; Hobson, W.S. ; Chao, P.C.
Pub. info.: Proceedings of the Twenty-first State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXI).  pp.187-196,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-34
32.

Conference Proceedings
Conference Proceedings
32. The Epitaxial Growth, Properties and Device Applications of AlGaInP
Hobson, W.S.
Pub. info.: Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII).  pp.26-42,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-21
33.

Conference Proceedings
Conference Proceedings
33. Comparison of ICI and IBr Plasma Chemistries for Etching of InGaAlP Alloys
Hong, J. ; Lee, J.W ; Lambers, E.S. ; Abernathy, C.R ; Pearton, S.J. ; Constantine, C. ; Hobson, W.S.
Pub. info.: Proceedings of the Symposium on High Speed III-V Electronics for Wireless Applications and the twenty-fifth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXV).  pp.56-64,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-15
34.

Conference Proceedings
Conference Proceedings
34. High Performance InGaAs/GaAs Lasers
Hobson, W.S. ; Vakhshoori, D. ; Han, H. ; Lopata, J. ; Wynn, J.D. ; Chu, S.N.G.
Pub. info.: Proceedings of the Symposium on High Speed III-V Electronics for Wireless Applications and the twenty-fifth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXV).  pp.298-308,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-15
35.

Conference Proceedings
Conference Proceedings
35. Finite difference analysis of thermal characteristics of CW operation 850-nm lateral current injection and implant-apertured VCSEL with flip-chip bond design
Mehandru, R. ; Dang, G. ; Ip, K.P. ; Kim, S. ; Ren, F. ; Pearton, S.J. ; Hobson, W.S. ; Lopata, J. ; Chang, W.H. ; Shen, H.
Pub. info.: Physics and Simulation of Optoelectronic Devices XI.  pp.323-331,  2003.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4986