1.

Conference Proceedings
Conference Proceedings
1. Performance of Intra-Cavity Contacted, Shallow Implant Apertured Vertical-Cavity Surface Emitting Lasers *
Hobson, W.S. ; Lopata, J. ; Chirovsky, L.M.F. ; Chu, S.N.G. ; Dang, G. ; Ren, F. ; Tayahi, M.B. ; Pearton, S.J.
Pub. info.: III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia.  pp.265-272,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-1
2.

Conference Proceedings
Conference Proceedings
2. HYDROGEN PASSIVATION OF INTERFACIAL DEFECTS IN MOCVD GROWN GaAs/InP
Swaminathan, V. ; Chakrabarti, U.K. ; Hobson, W.S. ; Caruso, R. ; Lopata, J. ; Pearton, S.J.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.489-494,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
3.

Conference Proceedings
Conference Proceedings
3. Damage Investigation of GaAs and InGaP Dry Etched with an Electron Cyclotron Resonance Source
Cole, M.W. ; Han, W.Y. ; Pfeffer, R.L. ; Eckart, D.W. ; Pang, S.W. ; Ko, K.K. ; Ren, F. ; Hobson, W.S. ; Lothian, J.R. ; Lopata, J. ; Caballero, J.A. ; Pearton, S.J.
Pub. info.: Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII).  pp.293-306,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-21
4.

Conference Proceedings
Conference Proceedings
4. Extremely High Etching Rate of In-Based III-V Semiconductors in BCl3/N2 Based Plasma
Ren, F. ; Pearton, S.J. ; Hobson, W.S. ; Lothian, J.R. ; Lopata, J. ; Cole, M.W. ; Caballero, J.A.
Pub. info.: Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII).  pp.346-353,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-21
5.

Conference Proceedings
Conference Proceedings
5. P-GaAs Base Regrowth For GaN HBTs And BJTs
Dang, Gerard ; Zhang, A.P. ; Cao, X.A. ; Ren, F. ; Pearton, S.J. ; Cho, H. ; Hobson, W.S. ; Lopata, J. ; Van Hove, J.M. ; Klaassen, J.J. ; Polley, C.J. ; Wowchack, A.M. ; Chow, P.P. ; King, D.J.
Pub. info.: Wide-bandgap electronic devices.  pp.T6.13-,  2001.  Warrendale, PA..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 622
6.

Conference Proceedings
Conference Proceedings
6. Kinetics of AlxGa1-xAs Oxidation Layer by Capacitance- Voltage Technique*
Dang, G. ; Luo, B. ; Mehandru, R. ; Ren, F. ; Hobson, W.S. ; Lopata, J. ; Tayahi, M ; Chu, S.N.G. ; Pearton, S.J. ; Chang, W. ; Shen, H.
Pub. info.: State-of-the-art program on compound semiconductors XXXVI and wide bandgap semiconductors for photonic and electronic devices and sensors II : proceedings of the international symposia.  pp.225-231,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-3
7.

Conference Proceedings
Conference Proceedings
7. High Performance InGaAs/GaAs Lasers
Hobson, W.S. ; Vakhshoori, D. ; Han, H. ; Lopata, J. ; Wynn, J.D. ; Chu, S.N.G.
Pub. info.: Proceedings of the Symposium on High Speed III-V Electronics for Wireless Applications and the twenty-fifth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXV).  pp.298-308,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-15
8.

Conference Proceedings
Conference Proceedings
8. Finite difference analysis of thermal characteristics of CW operation 850-nm lateral current injection and implant-apertured VCSEL with flip-chip bond design
Mehandru, R. ; Dang, G. ; Ip, K.P. ; Kim, S. ; Ren, F. ; Pearton, S.J. ; Hobson, W.S. ; Lopata, J. ; Chang, W.H. ; Shen, H.
Pub. info.: Physics and Simulation of Optoelectronic Devices XI.  pp.323-331,  2003.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4986