1.

Conference Proceedings
Conference Proceedings
1. ZINC DIFFUSION IN GaAs-A1GaAs HETEROJUNCTION BIPOLAR TRANSISTOR STRUCTURES
Hobson, W. S. ; Pearton, S. J. ; Jordan, A. S.
Pub. info.: Epitaxial heterostructures : symposium held April 16-19, 1990, San Francisco, California, U.S.A..  pp.321-326,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 198
2.

Conference Proceedings
Conference Proceedings
2. IMPROVEMENT OF OHMIC CONTACTS ON GaAs WITH IN-SITU CLEANING
Ren, F. ; Pearton, S. J. ; Fullowan, T. R. ; Hobson, W. S. ; Chu, S. N. G. ; Emerson, A. B.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.417-424,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
3.

Conference Proceedings
Conference Proceedings
3. IMPLANT ISOLATION MECHANISMS IN GaAs., A1GaAs, InP AND InGaAs
Pearton, S. J. ; Abernathy, C. R. ; Hobson, W. S. ; Neida, Von A. A.
Pub. info.: Advances in materials, processing, and devices in III-V compound semiconductors.  pp.433-438,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 144
4.

Conference Proceedings
Conference Proceedings
4. USE OF Pt GATE METALLIZATION TO REDUCE GATE LEAKAGE CURRENT IN GaAs MESFETs
Ren, F. ; Emerson, A. B. ; Pearton, S. J. ; Hobson, W. S. ; Fullowan, T. R. ; Lothian, J.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.409-416,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
5.

Conference Proceedings
Conference Proceedings
5. ION IMPLANTATION DOPING OF InGaP, InGaAs, AND InAIAl
Pearton, S. J. ; Kuo, J. M. ; Hobson, W. S. ; Hailemarian, E. ; Ren, F. ; Katz, A. ; Perley, A. P.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.797-804,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
6.

Conference Proceedings
Conference Proceedings
6. P-TYPE QUANTUM WELL INFRARED PHOTODETECTORS GROWN BY OMVPE
Hobson, W. S. ; Zussman, A. ; De Jong, J. ; Levine, B. F.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.569-574,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
7.

Conference Proceedings
Conference Proceedings
7. *THE GROWTH, CHARACTERIZATION AND ELETRONIC DEVICE APPLICATIONS OF GaAs/Si
Jordan, A. S. ; Pearton, S. J. ; Hobson, W. S.
Pub. info.: III-V heterostructures for electronic/photonic devices : symposium held April 24-27, 1989, San Diego, California, U.S.A..  pp.261-278,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 145
8.

Conference Proceedings
Conference Proceedings
8. ELECTRICAL AND OPTICAL PROPERTIES OF VANADIUM IN OMVPE-GROWN GaAs
Hobson, W. S. ; Pearton, S. J. ; Swaminathan, V. ; Jordan, A. S. ; Kao, Y. J. ; Haegel, M. ; Kanber, H.
Pub. info.: III-V heterostructures for electronic/photonic devices : symposium held April 24-27, 1989, San Diego, California, U.S.A..  pp.125-130,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 145
9.

Conference Proceedings
Conference Proceedings
9. NEAR GAP PHOTOLUMINESCENCE OF GaAs GROWN DIRECTLY ON InP
Schnoes, Lamoni M. ; Harris, T. D. ; Hobson, W. S. ; Lum., R. M. ; Klingent, J. K.
Pub. info.: III-V heterostructures for electronic/photonic devices : symposium held April 24-27, 1989, San Diego, California, U.S.A..  pp.405-408,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 145
10.

Conference Proceedings
Conference Proceedings
10. CARBON DOPING OF GaAs BY OMVPE USING CCL: A COMPARISON OF GALLIUM AND ARSENIC PRECURSORS
Hobson, W. S.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.45-50,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
11.

Conference Proceedings
Conference Proceedings
11. FORMATION OF INSULATING LAYERS IN GaAs-A1GaAs HETEROSTRUCTURES
Hobson, W. S. ; Pearton, S. J. ; Abernathy, C. R. ; von Neida, A. E.
Pub. info.: Chemistry and defects in semiconductor heterostructures.  pp.397-402,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 148
12.

Conference Proceedings
Conference Proceedings
12. RAPID ANNEALING OF RIE-INDUCED DDMAGE IN GaAs AND A1FGaAs
Pearton, S. J. ; Hobson, W. S. ; Chakrabarti, U. K. ; Short, K. T. ; White, A. E. ; Jnes, K. S
Pub. info.: Rapid thermal annealing/chemical vapor deposition and integrated processing : sympoisium held April 25-28, 1989, San Diego, California, U.S.A..  pp.399-404,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 146
13.

Conference Proceedings
Conference Proceedings
13. *ION IMPLANTATION PROCESSING OF GaAs AND RELATED COMPOUNDS
Pearton, s. J. ; Hobson, W. S. ; Abernathy, C. R.
Pub. info.: Ion beam processing of advanced electronic materials : symposium held April 25-27, 1989, San Diego, California, U.S.A..  pp.261-272,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 147
14.

Conference Proceedings
Conference Proceedings
14. USE OF SELECTIVE AREA DEFECT CREATION FOR ISOLATION OF III-V MULTILAYER STRUCTURES
Pearton, S. J. ; Ren, F. ; Fullowan, T. R, ; Katz, A. ; Hobson, W. S. ; Abernaty, C. R. ; Lothian, J., R. ; D'Asaro, L. A. ; Elliman, R. G. ; Ridgway, M. C. ; Jagadish, C. ; Williams,. J. S.
Pub. info.: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.763-768,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 262
15.

Conference Proceedings
Conference Proceedings
15. *HYDROGEN PASSIVATION OF GaAs:C EPITAXIAL LAYERS GROWN FROM METALORGANIC SOURCES
Stavola, Michael ; Kozuch, D. M. ; Abernathy, C. R. ; Hobson, W. S.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.75-86,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
16.

Conference Proceedings
Conference Proceedings
16. HI/H2 ECR PLASMA ETCHING OF III-V SEMICONDUCTORS
Pearton, S. J. ; Chakrabarti, U. K. ; Katz, A. ; Ren, F. ; Fullowan, T. R. ; Abernathy, C R. ; Hobson, W. S.
Pub. info.: Materials modification by energetic atoms and ions : symposium held April 28-30, 1992, San Francisco, California, U.S.A..  pp.17-22,  1992.  Pittsburgh, PA.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 268
17.

Conference Proceedings
Conference Proceedings
17. In-BASED OHMIC CONTACTS TO THE BASE LAYER OF GaAs-AlGaAs HETEROJUNCTION BIPOLAR TRANSISTORS
Ren, F. ; Pearton, S. J. ; Hobson, W. S. ; Fullowan, T. R. ; Emerson, A. B. ; Yanof, A. W. ; Schleich, D. M.
Pub. info.: Advanced metallizations in microelectronics : symposium held April 16-20, 1990, San Francisco, California, U.S.A..  pp.481-486,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 181
18.

Conference Proceedings
Conference Proceedings
18. ACCEPTOR DELTA-DOPING FOR SCHOTTKY BARRIER ENHANCEMENT ON n-TYPE GaAs
Pearton, S. J. ; Ren, F. ; Abernathy, C. R. ; Katz, A. ; Hobson, W. S. ; Chu, S. N. G. ; Kovalchick, J.
Pub. info.: Advanced metallizations in microelectronics : symposium held April 16-20, 1990, San Francisco, California, U.S.A..  pp.491-496,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 181
19.

Conference Proceedings
Conference Proceedings
19. Fabrication of Novel III-N and III-V Modulator Structures by ECR Plasma Etching
Pearton, S. J. ; Abernathy, C. R. ; MacKenzie, J. D. ; Mileham, J. R. ; Shul, R. J. ; Kilcoyne, S. P. ; Hagerott-Crawford, M. ; Ren, F. ; Hobson, W. S. ; Zavada, J. M.
Pub. info.: Surface/interface and stress effects in electronic material nanostructures : symposium held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.115-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 405
20.

Conference Proceedings
Conference Proceedings
20. SULFIDE PASSIVATED GaAs/AlGaAs MICRODISK LASERS
Hobson, W. S. ; Mohideen, U. ; Pearton, S. J. ; Slusher, R. E. ; Ren, F. ; Schnoes, M. Lamont
Pub. info.: Compound semiconductor epitaxy : symposium held April 4-7, 1994, San Francisco, California, U.S.A..  pp.201-,  1994.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 340
21.

Conference Proceedings
Conference Proceedings
21. GROWTH AND DOPING OF AlAs BY MOMBE
Abernathy, C. R. ; Pearton, S. J. ; Wisk, P. W. ; Hobson, W. S. ; Ren, F.
Pub. info.: Compound semiconductor epitaxy : symposium held April 4-7, 1994, San Francisco, California, U.S.A..  pp.187-,  1994.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 340
22.

Conference Proceedings
Conference Proceedings
22. Dry Etching of InGaP and AlInP in CH4/H2/Ar
Lee, J. W. ; Pearton, S. J. ; Santana, C. J. ; Lambers, E. S. ; Abernathy, C. R. ; Hobson, W. S. ; Ren, F.
Pub. info.: Compound semiconductor electronics and photonics : symposium held April 8-10, 1996, San Francisco, California, U.S.A..  pp.315-,  1996.  Pittsburgh, Penn.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 421
23.

Conference Proceedings
Conference Proceedings
23. Damage Introduction in InGaP and AlGaAs by Electron Cyclotron Resonance Ar Plasmas
Lee, J. W. ; Pearton, S. J. ; Stradtmann, R. R. ; Abernathy, C. R. ; Hobson, W. S. ; Ren, F.
Pub. info.: Compound semiconductor electronics and photonics : symposium held April 8-10, 1996, San Francisco, California, U.S.A..  pp.239-,  1996.  Pittsburgh, Penn.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 421
24.

Conference Proceedings
Conference Proceedings
24. Cl2-Based ECR Etching of InGaP, AlInP and AlGaP
Hong, J. ; Lee, J. W. ; Pearton, S. J. ; Santana, C. ; Abernathy, C. R. ; Hobson, W. S. ; Ren, F.
Pub. info.: Compound semiconductor electronics and photonics : symposium held April 8-10, 1996, San Francisco, California, U.S.A..  pp.303-,  1996.  Pittsburgh, Penn.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 421
25.

Conference Proceedings
Conference Proceedings
25. EFFECTS OF ION-IRRADIATION AND HYDROGENATION ON THE DOPING OF InGaAlN ALLOYS
Pearton, S. J. ; Abernathy, C. R. ; Hobson, W. S. ; Ren, F.
Pub. info.: Physics and applications of defects in advanced semiconductors : symposium held November 29-December 1, 1993, Boston, Massachusetts, U.S.A..  pp.261-,  1994.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 325
26.

Conference Proceedings
Conference Proceedings
26. Low temperature SiNx as a sacrificial layer in novel device fabrication
Lothian, J. R. ; Ren, F. ; Pearton, S. J. ; Abernathy, C. R. ; Tseng, B. ; Hobson, W. S.
Pub. info.: III-V electronic and photonic device fabrication and performance : symposium held April 12-15, 1993, San Francisco, California, U.S.A..  pp.161-,  1993.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 300
27.

Conference Proceedings
Conference Proceedings
27. Fully planar ion-implanted 0.98 ｦﾌm strained quantum well laser
Hobson, W. S. ; Pearton, S. J. ; Ren, F. ; Chu, S. N. G. ; Bylsma, R. ; Elliman, R. G.
Pub. info.: III-V electronic and photonic device fabrication and performance : symposium held April 12-15, 1993, San Francisco, California, U.S.A..  pp.107-,  1993.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 300
28.

Conference Proceedings
Conference Proceedings
28. AFM Analysis of ECR Dry-Etched InGaP, AllnP and AlGaP
Ren, F. ; Hobson, W. S. ; Lothian, J. R. ; Lopata, J. ; Caballero, J. A. ; Lee, J. W. ; Pearton, S. J. ; Cole, M. W.
Pub. info.: Diagnostic techniques for semiconductor materials processing II : symposium held November 27-30, 1995, Boston, Massachusetts, U.S.A..  pp.209-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 406
29.

Conference Proceedings
Conference Proceedings
29. Epitaxial growth, fabrication, and performance of InGaAs strained quantum well laser structures
Hobson, W. S.
Pub. info.: III-V electronic and photonic device fabrication and performance : symposium held April 12-15, 1993, San Francisco, California, U.S.A..  pp.75-,  1993.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 300
30.

Conference Proceedings
Conference Proceedings
30. Self-Aligned Process For Emitter- And Base- Regrowth GaN HBTs And BJTs
Lee, K.P. ; Zhang, A. P. ; Dang, G. ; Ren, F. ; Han, J. ; Chu, S. N. G. ; Hobson, W. S. ; Lopata, J. ; Abernathy, C. R. ; Pearton, S.J. ; Lee, J. W.
Pub. info.: GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 639
31.

Conference Proceedings
Conference Proceedings
31. NEW DRY-ETCH CHEMISTRIES FOR III-V SEMICONDUCTORS
Pearton, S. J. ; Chakrabarti, U. K. ; Ren, F. ; Abernathy, C. R. ; Katz, A. ; Hobson, W. S. ; Constantine, C.
Pub. info.: Gas-phase and surface chemistry in electronic materials processing : symposium held November 29-December 2, 1993, Boston, Massachusetts, U.S.A..  pp.399-,  1994.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 334