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31 results

Conference Proceedings

1. ZINC DIFFUSION IN GaAs-A1GaAs HETEROJUNCTION BIPOLAR TRANSISTOR STRUCTURES

Hobson, W. S. ; Pearton, S. J. ; Jordan, A. S.

Pub. info.:	Epitaxial heterostructures : symposium held April 16-19, 1990, San Francisco, California, U.S.A.. pp.321-326, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	198

Conference Proceedings

2. IMPROVEMENT OF OHMIC CONTACTS ON GaAs WITH IN-SITU CLEANING

Ren, F. ; Pearton, S. J. ; Fullowan, T. R. ; Hobson, W. S. ; Chu, S. N. G. ; Emerson, A. B.

Pub. info.:	Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.. pp.417-424, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	240

Conference Proceedings

3. IMPLANT ISOLATION MECHANISMS IN GaAs., A1GaAs, InP AND InGaAs

Pearton, S. J. ; Abernathy, C. R. ; Hobson, W. S. ; Neida, Von A. A.

Pub. info.:	Advances in materials, processing, and devices in III-V compound semiconductors. pp.433-438, 1989. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	144

Conference Proceedings

4. USE OF Pt GATE METALLIZATION TO REDUCE GATE LEAKAGE CURRENT IN GaAs MESFETs

Ren, F. ; Emerson, A. B. ; Pearton, S. J. ; Hobson, W. S. ; Fullowan, T. R. ; Lothian, J.

Pub. info.:	Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.. pp.409-416, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	240

Conference Proceedings

5. ION IMPLANTATION DOPING OF InGaP, InGaAs, AND InAIAl

Pearton, S. J. ; Kuo, J. M. ; Hobson, W. S. ; Hailemarian, E. ; Ren, F. ; Katz, A. ; Perley, A. P.

Pub. info.:	Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.. pp.797-804, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	240

Conference Proceedings

6. P-TYPE QUANTUM WELL INFRARED PHOTODETECTORS GROWN BY OMVPE

Hobson, W. S. ; Zussman, A. ; De Jong, J. ; Levine, B. F.

Pub. info.:	Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.. pp.569-574, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	240

Conference Proceedings

7. *THE GROWTH, CHARACTERIZATION AND ELETRONIC DEVICE APPLICATIONS OF GaAs/Si

Jordan, A. S. ; Pearton, S. J. ; Hobson, W. S.

Pub. info.:	III-V heterostructures for electronic/photonic devices : symposium held April 24-27, 1989, San Diego, California, U.S.A.. pp.261-278, 1989. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	145

Conference Proceedings

8. ELECTRICAL AND OPTICAL PROPERTIES OF VANADIUM IN OMVPE-GROWN GaAs

Hobson, W. S. ; Pearton, S. J. ; Swaminathan, V. ; Jordan, A. S. ; Kao, Y. J. ; Haegel, M. ; Kanber, H.

Pub. info.:	III-V heterostructures for electronic/photonic devices : symposium held April 24-27, 1989, San Diego, California, U.S.A.. pp.125-130, 1989. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	145

Conference Proceedings

9. NEAR GAP PHOTOLUMINESCENCE OF GaAs GROWN DIRECTLY ON InP

Schnoes, Lamoni M. ; Harris, T. D. ; Hobson, W. S. ; Lum., R. M. ; Klingent, J. K.

Pub. info.:	III-V heterostructures for electronic/photonic devices : symposium held April 24-27, 1989, San Diego, California, U.S.A.. pp.405-408, 1989. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	145

10.

Conference Proceedings

10. CARBON DOPING OF GaAs BY OMVPE USING CCL: A COMPARISON OF GALLIUM AND ARSENIC PRECURSORS

Hobson, W. S.

Pub. info.:	Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.. pp.45-50, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	240

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