Fabrication of 4H-SiC DIMOSFETs by High-Tempemture (>1400oC) Rapid Thermal Oxidation and Nitridation Using Cold-Wall Oxidation Furnace

Fabrication of 4H-SiC DIMOSFETs by High-Tempemture (>1400oC) Rapid Thermal Oxidation and Nitridation Using Cold-Wall Oxidation Furnace

Author(s):

Kosugi, R.

Publication title:

Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

Title of ser.:

Materials science forum

Ser. no.:

527-529

Pub. Year:

2006

Pt.:

2

Page(from):

1309

Page(to):

1312

Pages:

4

Pub. info.:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494255 [0878494251]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00015830
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2005
Conf. info. (Venue):	Pittsburgh, Pennsylvania, USA
Conf. info. (Date):	2005.09.18-2005.09.23

Similar Items:

1 Conference Proceedings High Temperature Rapid Thermal Oxidation and Nitridation of 4H-SiC in Diluted N2O and NO Ambient Kosugi, R., Fukuda, K., Arai, K. Trans Tech Publications	7 Conference Proceedings Significant Improvement of Inversion Channel Mobility in 4H-SiC MOSFET on (11-20) Face Using Hydrogen Post-Oxidation Annealing Senzaki, J., Fukuda, K., Kojima, K., Harada, S., Kosugi, R., Suzuki, S., Suzuki, T., Arai, K. Trans Tech Publications
2 Conference Proceedings Diluted Nitric Oxide (NO) Annealing of SiO2/4H-SiC in Cold-Wall Oxidation Furnace Kosugi, R., Fukuda, K. Trans Tech Publications	8 Conference Proceedings Significant Improvement of Inversion Channel Mobility in 4H-SiC MOSFET on (11-20) Face Using Hydrogen Post-Oxidation Annealing Senzaki, J., Fukuda, K., Kojima, K., Harada, S., Kosugi, R., Suzuki, S., Suzuki, T., Arai, K. Trans Tech Publications
3 Conference Proceedings Improvements in Electrical Properties of n-Type-Implanted 4H-SiC Substrates Using High-Temperature Rapid Thermal Annealing Senzaki, J., Harada, S., Kosugi, R., Suzuki, S., Fukuda, K., Arai, K. Trans Tech Publications	9 Conference Proceedings Electrical Properties of pn Diodes on 4H-SiC(000-1) C-Face and (11-20) Face Tanaka, Y., Kojima, K., Suzuki, T., Hayashi, T., Fukuda, K., Yatsuo, T., Arai, K. Trans Tech Publications
4 Conference Proceedings Improvements in Electrical Properties of n-Type-Implanted 4H-SiC Substrates Using High-Temperature Rapid Thermal Annealing Senzaki, J., Harada, S., Kosugi, R., Suzuki, S., Fukuda, K., Arai, K. Trans Tech Publications	10 Conference Proceedings Significant Improvement in Reliability of Thermal Oxide on 4H-SiC (0001) Face Using Ammonia Post-Oxidation Annealing J. Senzaki, T. Suzuki, A. Shimozato, K. Fukuda, K. Arai Trans Tech Publications
5 Conference Proceedings Fabrication of Double Implanted (0001) 4H-SiC MOSFETs by using Pyrogenic Re-Oxidation Annealing Kosugi, R., Kiritani, N., Suzuki, K., Yatsuo, T., Adachi, K., Fukuda, K. Trans Tech Publications	11 Conference Proceedings Fabrication of Mesa-Type pn Diodes without Forward Degradation on Ultra-High-Quality 6H-SiC Substrate Tanaka, Y., Ohno, T., Oyanagi, N., Nishizawa, S., Suzuki, T., Fukuda, K., Yatsuo, T., Arai, K. Trans Tech Publications
6 Conference Proceedings Fabrication of 4H-SiC Double-Epitaxial MOSFETs Harada, S., Okamoto, M., Yatsuo, T., Adachi, K., Suzuki, K., Suzuki, S., Fukuda, K., Arai, K. Trans Tech Publications	12 Conference Proceedings Channel Engineering of Buried-Channel 4H-SiC MOSFET Based on the Mobility Model of the Oxide/4H-SiC Interface Hatakeyama, T., Harada, S., Suzuki, S., Senzaki, J., Kosugi, R., Fukuda, K., Shinohe, T., Arai, K. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12