1.

Conference Proceedings
Conference Proceedings
1. Formation of High Quality Thin Stacked Oxynitride Gate Dielectrics by In-Situ Rapid Thermal Multiprocessing
Bhat, M. ; Cho, T.H. ; Yan, J. ; Han, L.K. ; Kwong, D.L.
Pub. info.: ULSI science and technology, 1995 : proceedings of the Fifth International Symposium on Ultra Large Scale Integration Science and Technology.  pp.472-484,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-5
2.

Conference Proceedings
Conference Proceedings
2. High Quality Oxynitride Gate Dielectrics Prepared by Reoxidation of NH3-Nitrided SiO2 and N2O-Oxide in N2O Ambient
Han, L.K. ; Kim, J. ; Wang, H.H. ; Yan, J. ; Kwong, D.L.
Pub. info.: ULSI science and technology, 1995 : proceedings of the Fifth International Symposium on Ultra Large Scale Integration Science and Technology.  pp.485-494,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-5
3.

Conference Proceedings
Conference Proceedings
3. Ultrathin Oxide Reliability: Effects of Gate Doping Concentration and Poly- Si/SiO2 Interface Stress Relaxation
Wristers, D. ; Wang, H.H. ; Han, L.K. ; Lin, C. ; Chen, T.S. ; Kwong, D.L. ; Fulford, J.
Pub. info.: The physics and chemistry of SiO[2] and the Si-SiO[2] interface-3, 1996 : proceedings of the Third International Symposium on the Physics and Chemistry of SiO[2] and the Si-SiO[2] Interface.  pp.733-743,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-1