1.

Conference Proceedings
Conference Proceedings
1. Ultrathin Oxide Reliability: Effects of Gate Doping Concentration and Poly- Si/SiO2 Interface Stress Relaxation
Wristers, D. ; Wang, H.H. ; Han, L.K. ; Lin, C. ; Chen, T.S. ; Kwong, D.L. ; Fulford, J.
Pub. info.: The physics and chemistry of SiO[2] and the Si-SiO[2] interface-3, 1996 : proceedings of the Third International Symposium on the Physics and Chemistry of SiO[2] and the Si-SiO[2] Interface.  pp.733-743,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-1
2.

Conference Proceedings
Conference Proceedings
2. Polarity Dependence of Dielectric Breakdown in NO/N2 O-Based Oxynitrides
Kim, B.Y. ; Han, L.K. ; Wristers, D. ; Fulford, J. ; Kwong, D.-L.
Pub. info.: The physics and chemistry of SiO[2] and the Si-SiO[2] interface-3, 1996 : proceedings of the Third International Symposium on the Physics and Chemistry of SiO[2] and the Si-SiO[2] Interface.  pp.722-732,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-1