1.

Conference Proceedings
Conference Proceedings
1. Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices
Sumakeris, J.J. ; Bergman, J.P. ; Das, M.K. ; Hallin, C. ; Hull, B.A. ; Janzen, E. ; Lendenmann, H. ; O'Loughlin, M.J. ; Paisley, M.J. ; Ha, S. ; Skowronski, M. ; Palmour, J.W. ; Carter, C.H.,Jr
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.141-146,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Microstructural Characterization of Recombination-Induced Stacking Faults in High-Voltage SiC Diodes
Liu, J.Q. ; Skowronski, M. ; Hallin, C. ; Soderholm, R. ; Lendenmann, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1281-1284,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
3.

Conference Proceedings
Conference Proceedings
3. High-Power SiC Diodes: Characteristics, Reliability and Relation to Material Defects
Lendenmann, H. ; Dahlquist, F. ; Bergman, J.P. ; Bleichner, H. ; Hallin, C.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1259-1264,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
4.

Conference Proceedings
Conference Proceedings
4. Degradation in SiC Bipolar Devices: Sources and Consequences of Electrically Active Dislocations in SiC
Lendenmann, H. ; Bergman, J.P. ; Dahlquist, F. ; Hallin, C.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.901-906,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
5.

Conference Proceedings
Conference Proceedings
5. Microstructural Characterization of Recombination-Induced Stacking Faults in High-Voltage SiC Diodes
Liu, J.Q. ; Skowronski, M. ; Hallin, C. ; Soederholm, R. ; Lendenmann, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1281-1284,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
6.

Conference Proceedings
Conference Proceedings
6. High-Power SiC Diodes: Characteristics, Reliability and Relation to Material Defects
Lendenmann, H. ; Dahlquist, F. ; Bergman, J.P. ; Bleichner, H. ; Hallin, C.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1259-1264,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393