1.

Conference Proceedings
Conference Proceedings
1. Investigation of Structural Stability in 4H-SiC Structures with Heavy Ion Implanted Interface
Galeckas, A. ; Hallen, A. ; Schoner, A. ; Linnros, J. ; Pirouz, P.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.395-398,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Electrical and Optical Characterisation of High Voltage 4H Silicon Carbide Diodes
Hallen, A. ; Zimmermann, U. ; Osterman, J. ; Galeckas, A. ; Linnros, J. ; Breitholtz, B.
Pub. info.: Compound semiconductor power transistors II : proceedings of the second international symposium and state-of-the-art program on compound semiconductors (SOTAPOCS XXXII) : proceedings of the thirty-second international symposium.  pp.82-89,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-1
3.

Conference Proceedings
Conference Proceedings
3. Investigation of Stacking Fault Formation in Hydrogen Bombarded 4H-SiC
Galeckas, A. ; Kortegaard Nielsen, H. ; Linnros, J. ; Hallen, A. ; Svensson, B. G. ; Pirouz, P.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.327-330,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
4.

Conference Proceedings
Conference Proceedings
4. Comparative Study of 4H-SiC Irradiated with Neutrons and Heavy Ions
Kalinina, E. ; Kholuyanov, G. ; Onushkin, G. ; Davydov, D. ; Strel'chuk, A. ; Konstantinov, A. ; Hallen, A. ; Skuratov, V. ; Kuznetsov, A.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.377-380,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
5.

Conference Proceedings
Conference Proceedings
5. High Energy Resolution Detectors Based on 4H-SiC
Ivanov, A. ; Kalinina, E. ; Kholuyanov, G. ; Strokan, N. ; Onushkin, G. ; Konstantinov, A. ; Hallen, A. ; Kuznetsov, A.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.1029-1032,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
6.

Conference Proceedings
Conference Proceedings
6. Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures
Strel'chuk, A. M. ; Kalinina, E. V. ; Konstantinov, A. O. ; Hallen, A.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.993-996,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
7.

Conference Proceedings
Conference Proceedings
7. Lattice Disorder Effects on the Vacancy-Oxygen Center in Ion-Irradiated Silicon
Keskitalo, N. ; Hallen, A. ; Lalita, J. ; Svensson, B. G.
Pub. info.: Defects and diffusion in silicon processing : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.233-,  1997.  Pittsburg, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 469
8.

Conference Proceedings
Conference Proceedings
8. Rapid Migration of Defects in Ion-Implanted Silicon
Lalita, J. ; Pellegrino, P. ; Hallen, A. ; Svensson, B. G. ; Keskitalo, N. ; Fatima, S. ; Jagadish, C.
Pub. info.: Defects and diffusion in silicon processing : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.239-,  1997.  Pittsburg, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 469
9.

Conference Proceedings
Conference Proceedings
9. Dissociation of Deuterium-Defect Complexes in Ion-Implanted Epitaxial 4H-SiC
Janson, M. ; Linnarsson, M. K. ; Hallen, A. ; Svensson, B. G.
Pub. info.: Hydrogen in semiconductors and metals : symposium held April 13-17, 1998, San Francisco, California, U.S.A..  pp.439-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 513
10.

Conference Proceedings
Conference Proceedings
10. Carrier Concentrations in Implanted and Epitaxial 4H-SiC by Scanning Spreading Resistance Microscopy
OEsterman, J. ; Anand, S. ; Linnarsson, M.K. ; Hallen, A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.663-666,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
11.

Conference Proceedings
Conference Proceedings
11. Range Distributions of Implanted Ions in Silicon Carbide
Janson, M.S. ; Linnarsson, M.K. ; Hallen, A. ; Svensson, B.G.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.779-782,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
12.

Conference Proceedings
Conference Proceedings
12. Damage Evolution and Recovery in Al-Implanted 4H-SiC
Zhang, Y. ; Weber, W. ; Jiang, W. ; Hallen, A. ; Possnert, G.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.815-818,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
13.

Conference Proceedings
Conference Proceedings
13. Ion Implantation - Tool for Fabrication of Advanced 4H-SiC Devices
Kalinina, E. ; Kholujanov, G. ; Gol'dberg, Yu. ; Blank, T. ; Onushkin, G. ; Strel'chuk, A. ; Violina, G. ; Kossov, V. ; Yafaev, R. ; Hallen, A. ; Konstantinov, A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.835-838,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
14.

Conference Proceedings
Conference Proceedings
14. The Deep Boron Level in High-Voltage PiN Diodes
Stadler, W. ; Hallen, A. ; Osterman, J. ; Zimmermann, U. ; Svensson, B.G.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1309-1312,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
15.

Conference Proceedings
Conference Proceedings
15. Electrical Characterization of High-Voltage 4H-SiC Diodes on High-Temperature CVD-Grown Epitaxial Layers
Zimmermann, U. ; Osterman, J. ; Zhang, J. ; Henry, A. ; Hallen, A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1285-1288,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
16.

Conference Proceedings
Conference Proceedings
16. Dissociation Energy of the Passivating Hydrogen-Aluminum Complex in 4H-SiC
Janson, M.S ; Hallen, A. ; Linnarsson, M.K. ; Nordell, N. ; Karlsson, S. ; Svensson, B.G.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.427-430,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
17.

Conference Proceedings
Conference Proceedings
17. Implantation Temperature Dependent Deep Level Defects in 4H-SiC
Aberg, D. ; Storasta, L. ; Hallen, A. ; Svensson, B.G.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.443-446,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
18.

Conference Proceedings
Conference Proceedings
18. Proton Irradiation Induced Defects in 4H-SiC
Storasta, L. ; Carlsson, F.H.C. ; Sridhara, S.G. ; Aberg, D. ; Bergman, J.P. ; Hallen, A. ; Janzen, E.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.431-434,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
19.

Conference Proceedings
Conference Proceedings
19. Characterization of Aluminum and Titanium Oxides Deposited on 4H-SiC by Atomic Layer Deposition Technique
Wolborski, M. ; Bakowski, M. ; Pore, V. ; Ritala, M. ; Leskela, M. ; Schoner, A. ; Hallen, A.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.701-704,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
20.

Conference Proceedings
Conference Proceedings
20. Electron Beam Induced Current Investigation of High-Voltage 4H Silicon Carbide Diodes
Osterman, J. ; Hallen, A. ; Jargelius, M. ; Zimmermann, U. ; Galeckas, A. ; Breitholtz, B.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.777-780,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
21.

Conference Proceedings
Conference Proceedings
21. Channeled Implants in 6H Silicon Carbide
Janson, M. S. ; Hallen, A. ; Godignon, P. ; Kuznetsov, A. Yu. ; Linnarsson, M. K. ; Morvan, E. ; Svensson, B. G.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.889-892,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
22.

Conference Proceedings
Conference Proceedings
22. Current Voltage Characteristics of High-Voltage 4H Silicon Carbide Diodes
Zimmermann, U. ; Hallen, A. ; Breitholtz, B.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1323-1326,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
23.

Conference Proceedings
Conference Proceedings
23. Damage Evolution in Al-implanted 4H SiC
Hallen, A. ; Persson, P. O. A. ; Kuznetsov, A. Yu. ; Hultman, L. ; Svensson, B. G.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.869-872,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
24.

Conference Proceedings
Conference Proceedings
24. Structural Defects in Ion Implanted 4H-SiC Epilayers
Persson, P.O.Å. ; Skorupa, W. ; Panknin, D. ; Kuznetsov, A. ; Hallen, A. ; Hultman, L.
Pub. info.: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 640
25.

Conference Proceedings
Conference Proceedings
25. 4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density
Kalinina, E. V. ; Zubrilov, A. ; Solov'ev, V. ; Kuznetsov, N. ; Hallen, A. ; Konstantinov, A. ; Karlsson, S. ; Rendakova, S. ; Dmitriev, V.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.505-508,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
26.

Conference Proceedings
Conference Proceedings
26. Channeling Measurements of Ion Implantation Damage in 4H-SiC
Kuznetsov, A.Yu. ; Janson, M.S. ; Hallen, A. ; Svensson, B.G. ; Jagadish, C. ; Gruenleitner, H. ; Pensl, G.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.595-598,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
27.

Conference Proceedings
Conference Proceedings
27. Techniques for Depth Profiling of Dopants in 4H-SiC
Oesterman, J. ; Hallen, A. ; Anand, S. ; Linnarsson, M.K. ; Andersson, H. ; Aberg, D. ; Panknin, D. ; Skorupa, W.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.559-562,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
28.

Conference Proceedings
Conference Proceedings
28. Doping of Silicon Carbide by Ion Implantation
Svensson, B.G. ; Hallen, A. ; Linnarsson, M.K. ; Kuznetsov, A.Yu. ; Janson, M.S ; Aberg, D. ; Oesterman, J. ; Persson, P.O.A. ; Hultman, L. ; Storasta, L. ; Carlsson, F.H.C. ; Bergman, J.P. ; Jagadish, C. ; Morvan, E.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.549-554,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
29.

Conference Proceedings
Conference Proceedings
29. Electrical Study of Fast Neutron Irradiated Devices Based on 4H-SiC CVD Epitaxial Layers
Kalinina, E. ; Kholuyanov, G. ; Strel'chuk, A. ; Davydov, D. ; Hallen, A. ; Konstantinov, A. ; Nikiforov, A.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.705-710,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
30.

Conference Proceedings
Conference Proceedings
30. Ion Implantation - Tool for Fabrication of Advanced 4H-SiC Devices
Kalinina, E. ; Kholujanov, G. ; Gol'dberg, Y. ; Blank, T. ; Onushkin, G. ; Strel'chuk, A. ; Violina, G. ; Kossov, V. ; Yafaev, R. ; Hallen, A. ; Konstantinov, A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.835-838,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
31.

Conference Proceedings
Conference Proceedings
31. The Deep Boron Level in High-Voltage PiN Diodes
Aberg, D. ; Hallen, A. ; OEsterman, J. ; Zimmermann, U. ; Svensson, B.G.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1309-1312,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
32.

Conference Proceedings
Conference Proceedings
32. Simulations of High-Voltage 4H-SiC p+nn+ Diodes Using a Transient Model for the Deep Boron Level
Domeij, M. ; Zimmermann, U. ; Aberg, D. ; Ostermann, J. ; Hallen, A. ; Ostling, M.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.847-850,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
33.

Conference Proceedings
Conference Proceedings
33. SEM Visibility of Stacking Faults in 4H-Silicon Carbide Epitaxial and Implanted Layers
Zimmermann, U. ; Osterman, J. ; Galeckas, A. ; Hallen, A.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.937-940,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
34.

Conference Proceedings
Conference Proceedings
34. Comparison between Implanted and Epitaxial PiN-Diodes on 4H-Silicon Carbide
Zimmermann, U. ; Domeij, M. ; Hallen, A. ; Oestling, M.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1037-1040,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
35.

Conference Proceedings
Conference Proceedings
35. M-Center in Low-Dose Proton Implanted 4H-SiC; Bistability and Change in Emission Rate
Kortegaard Nielsen, H. ; Hallen, A. ; Martin, D. M. ; Svensson, B. G.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.497-500,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
36.

Conference Proceedings
Conference Proceedings
36. Dll PL Intensity Dependence on Dose, Implantation Temperature and Implanted Species in 4H- and 6H-SiC
Carlsson, F.H.C. ; Sridhara, S.G. ; Hallen, A. ; Bergman, J.P. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.345-348,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
37.

Conference Proceedings
Conference Proceedings
37. Evidence for Two Charge States of the S-Center in Ion-Implanted 4H-SiC
David, M.L. ; Alfieri, G. ; Monakhov, E.V. ; Hallen, A. ; Barbot, J.F. ; Svensson, B.G.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.371-374,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
38.

Conference Proceedings
Conference Proceedings
38. Electrical Characterization of High-Voltage 4H-SiC Diodes on High-Temperature CVD-Grown Epitaxial Layers
Zimmermann, U. ; OEsterman, J. ; Zhang, J. ; Henry, A. ; Hallen, A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1285-1288,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
39.

Conference Proceedings
Conference Proceedings
39. Defect Evolution in Proton-Irradiated 4H SiC Investigated by Deep Level Transient Spectroscopy
Leveque, P. ; Martin, D. ; Svensson, B.G. ; Hallen, A.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.415-418,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
40.

Conference Proceedings
Conference Proceedings
40. Electrical and Optical Study of 4H-SiC CVD Epitaxial Layers Irradiated with Swift Heavy Ions
Kalinina, E. ; Kholujanov, G. ; Onushkin, G. ; Davydov, D. ; Strel'chuk, A. ; Zubrilov, A. ; Hallen, A. ; Konstantinov, A. ; Skuratov, V. ; Stano, J.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.467-470,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
41.

Conference Proceedings
Conference Proceedings
41. Carrier Concentrations in Implanted and Epitaxial 4H-SiC by Scanning Spreading Resistance Microscopy
Osterman, J. ; Anand, S. ; Linnarsson, M.K. ; Hallen, A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.663-666,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
42.

Conference Proceedings
Conference Proceedings
42. Vacancy-Type Defect Distributions of 11B-, 14N- and 27Al-Implanted 4H-SiC Studied by Positron Annihilation Spectroscopy
Janson, M.S. ; Slotte, J. ; Kuznetsov, A.Yu. ; Saarinen, K. ; Hallen, A.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.641-644,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
43.

Conference Proceedings
Conference Proceedings
43. Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers
Kalinina, E. ; Kholujanov, G. ; Sitnikova, A. ; Kossov, V. ; Yafaev, R. ; Pensl, G. ; Reshanov, S. ; Hallen, A. ; Konstantinov, A.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.637-640,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
44.

Conference Proceedings
Conference Proceedings
44. Damage Evolution and Recovery in Al-Implanted 4H-SiC
Zhang, Y. ; Weber, W.J. ; Jiang, W. ; Hallen, A. ; Possnert, G.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.815-818,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
45.

Conference Proceedings
Conference Proceedings
45. Range Distributions of Implanted Ions in Silicon Carbide
Janson, M.S. ; Linnarsson, M.K. ; Hallen, A. ; Svensson, B.G.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.779-782,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
46.

Conference Proceedings
Conference Proceedings
46. Ion Implantation Processing and Related Effects in SiC
Svensson, B.G. ; Hallen, A. ; Wong-Leung, J. ; Janson, M.S. ; Linnarsson, M.K. ; Kuznetsov, A.Yu. ; Alfieri, G. ; Grossner, U. ; Monakhov, E.V. ; Nielsen, H.K. ; Jagadish, C. ; Grillenberger, J.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.781-786,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529