1.

Conference Proceedings
Conference Proceedings
1. Comparative Study of 4H-SiC Irradiated with Neutrons and Heavy Ions
Kalinina, E. ; Kholuyanov, G. ; Onushkin, G. ; Davydov, D. ; Strel'chuk, A. ; Konstantinov, A. ; Hallen, A. ; Skuratov, V. ; Kuznetsov, A.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.377-380,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
2.

Conference Proceedings
Conference Proceedings
2. High Energy Resolution Detectors Based on 4H-SiC
Ivanov, A. ; Kalinina, E. ; Kholuyanov, G. ; Strokan, N. ; Onushkin, G. ; Konstantinov, A. ; Hallen, A. ; Kuznetsov, A.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.1029-1032,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
3.

Conference Proceedings
Conference Proceedings
3. Ion Implantation - Tool for Fabrication of Advanced 4H-SiC Devices
Kalinina, E. ; Kholujanov, G. ; Gol'dberg, Yu. ; Blank, T. ; Onushkin, G. ; Strel'chuk, A. ; Violina, G. ; Kossov, V. ; Yafaev, R. ; Hallen, A. ; Konstantinov, A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.835-838,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
4.

Conference Proceedings
Conference Proceedings
4. Electrical Study of Fast Neutron Irradiated Devices Based on 4H-SiC CVD Epitaxial Layers
Kalinina, E. ; Kholuyanov, G. ; Strel'chuk, A. ; Davydov, D. ; Hallen, A. ; Konstantinov, A. ; Nikiforov, A.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.705-710,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
5.

Conference Proceedings
Conference Proceedings
5. Ion Implantation - Tool for Fabrication of Advanced 4H-SiC Devices
Kalinina, E. ; Kholujanov, G. ; Gol'dberg, Y. ; Blank, T. ; Onushkin, G. ; Strel'chuk, A. ; Violina, G. ; Kossov, V. ; Yafaev, R. ; Hallen, A. ; Konstantinov, A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.835-838,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
6.

Conference Proceedings
Conference Proceedings
6. Electrical and Optical Study of 4H-SiC CVD Epitaxial Layers Irradiated with Swift Heavy Ions
Kalinina, E. ; Kholujanov, G. ; Onushkin, G. ; Davydov, D. ; Strel'chuk, A. ; Zubrilov, A. ; Hallen, A. ; Konstantinov, A. ; Skuratov, V. ; Stano, J.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.467-470,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
7.

Conference Proceedings
Conference Proceedings
7. Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers
Kalinina, E. ; Kholujanov, G. ; Sitnikova, A. ; Kossov, V. ; Yafaev, R. ; Pensl, G. ; Reshanov, S. ; Hallen, A. ; Konstantinov, A.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.637-640,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436