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12 results

Conference Proceedings

1. PHOTOLUMINESCENCE OF InP/GaAs/Si HETEROSTRUCTURES

Mazzi, V. P. ; Haegel, N. M. ; Vernon, S. M. ; Haven, V,. E,.

Pub. info.:	Advances in materials, processing, and devices in III-V compound semiconductors. pp.267-272, 1989. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	144

Conference Proceedings

2. First results on GaAs blocked impurity band (BIB) structures for far-infrared detector arrays [5883-27]

Reichertz, L. A. ; Cardozo, B. L. ; Beernan, J. W. ; Larsen, D. I. ; Tschanz, S. ; Jakob, G. ; Katterloher, R. ; Haegel, N. M. ; Haller, E. E.

Pub. info.:	Infrared spaceborne remote sensing 2005 : 3-4 August 2005, San Diego, California, USA. pp.58830Q-, 2005. Bellingham, Wash., USA. SPIE - The International Society of Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	5883

Conference Proceedings

3. Modeling the alternate bias configuration and low temperature C-V profiling in blocked impurity band detectors [5883-28]

Tschanz, S. J. ; Garcia, J. C. ; Haegel, N. M.

Pub. info.:	Infrared spaceborne remote sensing 2005 : 3-4 August 2005, San Diego, California, USA. pp.58830R-, 2005. Bellingham, Wash., USA. SPIE - The International Society of Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	5883

Conference Proceedings

4. INDIUM-CARBON Co-IMPLANTATION IN GaAs

Madok, J. H. ; Haegel, N. M.

Pub. info.:	Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.. pp.817-822, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	240

Conference Proceedings

5. IMPROVEMENT OF InP-GaAs-Si QUALITY BY THERMAL-CYCLE GROWTH

Vernon, S. M. ; Keavney, C. J. ; Gagnon, E. D. ; Karam,. N. H. ; Al-Jassim. M. M. ; Haegel, N. M. ; Mazzi, V. P. ; Wie, C. R.

Pub. info.:	Epitaxial heterostructures : symposium held April 16-19, 1990, San Francisco, California, U.S.A.. pp.163-170, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	198

Conference Proceedings

6. THREE-DIMENSIONAL FINITE ELEMENT CALCULATIONS OF THERMAL STRESSES IN PATTERNED GaAs/Si

Lingunis, E. H. ; Haegel, N. M. ; Karam, N. H.

Pub. info.:	Thin films : stresses and mechanical properties III : symposium held December 2-5, 1991, Boston, Massachusetts, U.S.A.. pp.157-162, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	239

Conference Proceedings

7. OPTICAL CHARACTERIZATION OF HEAVILY CARBON DOPED GaAs

Wang, Lei ; Haegel, N. M.

Pub. info.:	Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.. pp.87-92, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	240

Conference Proceedings

8. INTERFACE RECOMBINATION IN III/V HETEROSTRUCTURES INVESTIGATED THROUGH THE POWER DEPENDENCE OF EXCITONIC PHOTOLUMINESCENCE

Mullenborn, M. ; Haegel, N. M.

Pub. info.:	Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.. pp.93-98, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	240

Conference Proceedings

9. MATERIAL AND DEVICE PROPERTIES ON 3" DIAMETER GaAs-ON-Si WITH BURIED P--TYPE LAYERS

Pearton, S. J. ; Lee, K. M. ; Haegel, N. M. ; Huang, c.-J. ; Nakahara, S. ; Ren. F. ; Scarpelli, V. ; Short, K. T. ; Vernon, S. M.

Pub. info.:	Advances in materials, processing, and devices in III-V compound semiconductors. pp.317-322, 1989. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	144

10.

Conference Proceedings

10. Recombination at heterojunction interfaces

Mullenborn, M. ; Haegel, N. M.

Pub. info.:	III-V electronic and photonic device fabrication and performance : symposium held April 12-15, 1993, San Francisco, California, U.S.A.. pp.139-, 1993. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	300

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