1.

Conference Proceedings
Conference Proceedings
1. QUASI-STOICHIOMETRIC SILICON NITRIDE THIN FILMS DEPOSITED BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION
Lucovsky, G. ; Ma, Y. ; He, S.S. ; Yasuda, T. ; Stephens, D.J. ; Habermehl, S.
Pub. info.: Amorphous insulating thin films : symposium held December 1-4, 1992, Boston, Massachusetts, U.S.A..  pp.33-38,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 284
2.

Conference Proceedings
Conference Proceedings
2. Si-N BONDING AT THE SiO2/Si INTERFACES DURING DEPOSITION OF SiO2 BY THE REMOTE PECVD PROCESS
Ma, Y. ; Yasuda, T. ; Habermehl, S. ; Lucovsky, G.
Pub. info.: Photons and low energy particles in surface processing : symposium held Decmber[i.e. December] 3-6, 1991, Boston, Massachusetts, U.S.A..  pp.341-348,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 236
3.

Conference Proceedings
Conference Proceedings
3. THE INTERACTION OF HYDROGEN PLASMAS WITH Ga-BASED Ill-V SEMICONDUCTOR SURFACES
Lu, Z. ; Habermehl, S. ; Lucovsky, G. ; Dietz, N. ; Bachmann, K.J. ; Osgood, R.M.
Pub. info.: Proceedings of the Third International Symposium on Cleaning Technology in Semiconductor Device Manufacturing.  pp.416-424,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-7
4.

Conference Proceedings
Conference Proceedings
4. Si(100) SURFACE PREPARATION BY IN-SITU OR IN-VACUO EXPOSURE TO REMOTELY PLASMA-GENERATED ATOMIC HYDROGEN: APPLICATIONS TO DEPOSITED SiO2 AND EPITAXIAL GROWTH OF Si
Yasuda, T. ; Ma, Y. ; Habermehl, S. ; Kim, S.S. ; Lucovsky, G. ; Schneider, T.P. ; Cho, J. ; Nemanich R.J.
Pub. info.: Evolution of thin-film and surface microstructure : symposium held November 26-December 1, 1990, Boston, Massachusetts, U.S.A..  pp.395-400,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 202
5.

Conference Proceedings
Conference Proceedings
5. CONTROL OF PROCESS-INDUCED DEFECTS IN THE FORMATION OF SINGLE AND MULTIPLE LAYER DIELECTRIC STRUCTURES FOR Si SEMICONDUCTOR DEVICES
He, S. S. ; Stephens, D. J. ; Ma. Y. ; Yasuda, T. ; Habermehl, S. ; Lucovsky, G.
Pub. info.: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.653-658,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 262
6.

Conference Proceedings
Conference Proceedings
6. A NEW TWO-STEP PLASMA-ASSISTED SURFACE CLEANING-OXIDATION AND FILM-DEPOSITION PROCESS SEQUENCE FOR THE FORMATION OF Si(100)/SiO2 INTERFACES WITH LOW DENSITIES OF INTERFACIAL TRAPS
Ma, Y. ; Yasuda, T. ; Habermehl, S. ; He, S.S. ; Stephens, D.J. ; Lucovsky, G.
Pub. info.: Chemical surface preparation, passivation, and cleaning for semiconductor growth and processing : symposium held April 27-29, 1992, San Francisco, California, U.S.A..  pp.69-74,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 259
7.

Conference Proceedings
Conference Proceedings
7. Si-N BONDING AT THE SiO2/Si INTERFACES DURING DEPOSITION OF SiO2 BY THE REMOTE PECVD PROCESS
Ma, Y. ; Yasuda, T. ; Habermehl, S. ; Lucovsky, G.
Pub. info.: Phase formation and modification by beam-solid interactions : symposium held December 2-6, 1991, Boston, Massachusetts, U.S.A..  pp.799-806,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 235
8.

Conference Proceedings
Conference Proceedings
8. Bonding of Hydrogen and Deuterium in Silicon Nitride Films Prepared by Remote Plasma Enhanced Chemical Vapor Deposition
Stevens, G. ; Santos-Filho, P. ; Habermehl, S. ; Lucovsky, G.
Pub. info.: Amorphous silicon technology, 1995 : Symposium held April 18-21, 1995, San Francisco, California, U.S.A..  pp.313-,  1995.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 377
9.

Conference Proceedings
Conference Proceedings
9. Charge Transport in Low Stress Si-rich Silicon Nitride Thin Films
Habermehl, S. ; Carmignani, C.
Pub. info.: Materials science of microelectromechanical systems (MEMS) devices IV : symposium held November 25-28, 2001, Boston, Massachusetts, U.S.A..  pp.107-112,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 687
10.

Conference Proceedings
Conference Proceedings
10. Fabrication techniques for low-loss silicon nitride waveguides
Shaw, M.J. ; Guo, J. ; Vawter, G.A. ; Habermehl, S. ; Sullivan, C.T.
Pub. info.: Micromachining technology for micro-optics and nano-optics III : 25-27 January 2005, San JOse, California, USA.  pp.109-118,  2005.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5720
11.

Conference Proceedings
Conference Proceedings
11. Onset of Dielectric Breakdown in LPCVD Silicon Oxynitride Thin Films
Habermehl, S. ; Apodaca, R.T.
Pub. info.: Silicon nitride, silicon dioxide thin insulating films, and other emerging dieletrics VIII : proceedings of the international symposium.  pp.363-374,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-01
12.

Conference Proceedings
Conference Proceedings
12. Homoepitaxial Growth of Si by Remote Plasma Chemical Vapor Deposition
Habermehl, S. ; Lucovsky, G.
Pub. info.: AIchE 1994 Annual Meeting : November 13-18 San Francisco Hilton and Towers Hotel, San Francisco, California.  1994.  New York.  American Institute of Chemical Engineers
Title of ser.: AIChE meeting [papers]
Ser. no.: 1994
13.

Conference Proceedings
Conference Proceedings
13. Properties of low residual stress silicon oxynitrides used as a sacrificial layer
Habermehl, S. ; Glenzinski, A. K. ; Halliburton, W. M. ; Sniegowski, J. J.
Pub. info.: Materials science of microelectromechanical systems (MEMS) devices II : symposium held November 29-December 1, 1999, Boston, Massachusetts, U.S.A..  pp.49-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 605
14.

Conference Proceedings
Conference Proceedings
14. GROWTH AND CHARACTERIZATION OF Si-GaP AND Si-GaP-Si HETEROSTRUCTURES
Dietz, N. ; Habermehl, S. ; Kelliher, J. T. ; Lucovsky, G. ; Bachmann, K. J.
Pub. info.: Gas-phase and surface chemistry in electronic materials processing : symposium held November 29-December 2, 1993, Boston, Massachusetts, U.S.A..  pp.495-,  1994.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 334
15.

Conference Proceedings
Conference Proceedings
15. MICROSTRUCTURE OF Si FILMS DEPOSITED ON Si(100) SURFACES BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION, RPECVD: DEPENDENCE ON PROCESS PRESSURE AND SUBSTRATE TEMPERATURE
Habermehl, S. ; He, S. S. ; Chen, Y. L. ; Lucovsky, G.
Pub. info.: Phase transformations in thin films : thermodynamics and kinetics : symposium held April 13-15, 1993, San Francisco, California, U.S.A..  pp.379-,  1993.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 311