1.

Conference Proceedings
Conference Proceedings
1. 4H-SiC Power BJTs with High Current Gain and Low On-Resistance
H.S. Lee ; M. Domeij ; C.M. Zetterling ; M. Ostling
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.767-770,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
2.

Conference Proceedings
Conference Proceedings
2. A Comparative Study of Surface Passivation on SiC BJTs with High Current Gain
H.S. Lee ; M. Domeij ; C.M. Zetterling ; M. Ostling ; E.O. Sveinbjornsson
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.631-634,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
3.

Conference Proceedings
Conference Proceedings
3. A Simple and Reliable Electrical Method for Measuring the Junction Temperature and Thermal Resistance of 4H-SiC Power Bipolar Junction Transistors
K.G.P. Eriksson ; M. Domeij ; H.S. Lee ; C.M. Zetterling ; M. Östling
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.1171-1174,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
4.

Conference Proceedings
Conference Proceedings
4. Simulations of Open Emitter Breakdown Voltage in SiC BJTs with Non Implanted JTE
B. Buono ; H.S. Lee ; M. Domeij ; C.M. Zetterling ; M. Östling
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.841-844,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
5.

Conference Proceedings
Conference Proceedings
5. 1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-Resistance
H.S. Lee ; M. Domeij ; C.M. Zetterling ; R. Ghandi ; M. Östling
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.1151-1154,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
6.

Conference Proceedings
Conference Proceedings
6. Backside Nickel Based Ohmic Contacts to n-Type Silicon Carbide
R. Ghandi ; H.S. Lee ; M. Domeij ; C.M. Zetterling ; M. Östling
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.635-638,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
7.

Conference Proceedings
Conference Proceedings
7. Implantation-Free Low On-Resistance 4H-SiC BJTs with Common-Emitter Current Gain of 50 and High Blocking Capability
R. Ghandi ; H.S. Lee ; M. Domeij ; B. Buono ; C.M. Zetterling
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.833-836,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617