1.

Conference Proceedings
Conference Proceedings
1. Carrier Lifetime Control of 4H-SiC Epitaxial Layers by Boron Doping
T. Miyazawa ; T. Tawara ; H. Tsuchida
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.51-54,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897
2.

Conference Proceedings
Conference Proceedings
2. Suppression of the Forward Degradation in 4H-SiC PiN Diodes by Employing a Recombination-Enhanced Buffer Layer
T. Tawara ; T. Miyazawa ; M. Ryo ; M. Miyazato ; T. Fujimoto ; K. Takenaka ; S. Matsunaga ; M. Miyajima ; A. Otsuki ; Y. Yonezawa ; T. Kato ; H. Okumura ; T. Kimoto ; H. Tsuchida
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.419-422,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897
3.

Conference Proceedings
Conference Proceedings
3. V and Ti Doping in 4H-SiC Epitaxy for Reduction of Carrier Lifetimes
T. Miyazawa ; T. Tawara ; H. Tsuchida
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.67-70,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897