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High-performance 1.3-and 1.55-ｦﾌm InGaAsP/InP strained-layer quantum well lasers grown by LP-MOCVD

Author(s):
Ma,X. ( Institute of Semiconductors )
Wang,S.
Xiong,F.
Guo,L.
Wang,Z.
Wang,L.
Zhang,X.
Sun,G.
Xia,C.
Zhu,T.
Yang,Y.
Zhang,H.
He,G.
Yao,S.
Chen,L.
10 more
Publication title:
Integrated Optoelectronics
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
2891
Pub. Year:
1996
Page(from):
34
Page(to):
39
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819422927 [0819422924]
Language:
English
Call no.:
P63600/2891
Type:
Conference Proceedings

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