Resistance Decrease of Phosphorus Ion Implanted Poly-Si Thin Films during Low Temperature Annealing

Resistance Decrease of Phosphorus Ion Implanted Poly-Si Thin Films during Low Temperature Annealing

Author(s):

Publication title:

Polycrystalline thin films II : structure, properties, and applications : symposium held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

403

Pub. Year:

1996

Page(from):

405

Pub. info.:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993068 [1558993061]

Language:

English

Call no.:

M23500/403

Type:

Conference Proceedings

Details

TDL ID:	ZA00020303
Series ID:	PA00000011
Conf. info. (Name):	Symposium on polycrystalline thin films
Conf. info. (Number):	2nd
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1995.11.27-1995.12.01

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